Infineon Technologies - IKB30N65EH5ATMA1

  1. Home
  2. Infineon Technologies - IKB30N65EH5ATMA1
IKB30N65EH5ATMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IKB30N65EH5ATMA1
Description N-Channel; Maximum Power Dissipation (Abs): 188 W; Maximum Collector Current (IC): 55 A; Maximum Collector-Emitter Voltage: 650 V; Transistor Element Material: SILICON; Maximum Operating Temperature: 175 Cel;
Datasheet IKB30N65EH5ATMA1 Datasheet
In Stock588
NAME DESCRIPTION
Maximum Collector Current (IC): 55 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Polarity or Channel Type: N-Channel
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 187 ns
Maximum Power Dissipation (Abs): 188 W
Maximum Collector-Emitter Voltage: 650 V
Nominal Turn On Time (ton): 36 ns
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.1 V
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
588 $1.720 $1,011.360

Popular Products

Category Top Products

IKW50N60DTPXKSA1 by Infineon Technologies

IKW50N60DTPXKSA1

Infineon Technologies

IKW50N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and a nominal turn-off time of 332ns. The transistor operates in temperatures as low as -40°C, making it suitable for various industrial uses.
STGWT40HP65FB by STMicroelectronics

STGWT40HP65FB

STMicroelectronics

STGWT40HP65FB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Pmax of 283W. Ideal for power control applications, it has a toff of 202ns and ton of 169ns. Suitable for high-power systems operating b/w -55°C to 175°C.
FGY75T120SWD by Onsemi

FGY75T120SWD

Onsemi

Insulated Gate Bipolar Transistors;
NGTB25N120FL3WG by Onsemi

NGTB25N120FL3WG

Onsemi

NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.
SKM200GB125D by Semikron International

SKM200GB125D

Semikron International

Semikron International's SKM200GB125D is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.85V, IC of 200A, and toff of 445ns. Ideal for POWER CONTROL applications, it operates at up to 150°C with a VCE of 1200V.
DF150R12RT4HOSA1 by Infineon Technologies

DF150R12RT4HOSA1

Infineon Technologies

DF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V. It has a turn on time of 185ns and turn off time of 490ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 175°C.
HGTG30N60A4D by Intersil

HGTG30N60A4D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Additional Features: LOW CONDUCTION LOSS;
IRG4PC30UDPBF by International Rectifier

IRG4PC30UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 300 ns;
IGA03N120H2XKSA1 by Infineon Technologies

IGA03N120H2XKSA1

Infineon Technologies

Infineon's IGA03N120H2XKSA1 is an N-Channel IGBT with 1200V VCE, 310ns toff, and 14.4ns ton. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
IKQ50N120CH3XKSA1 by Infineon Technologies

IKQ50N120CH3XKSA1

Infineon Technologies

IKQ50N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it has a turn-off time of 466ns and turn-on time of 68ns. Package style is flange mount with through-hole terminals.
STGWA40H60DLFB by STMicroelectronics

STGWA40H60DLFB

STMicroelectronics

STGWA40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Ptot of 283W. Ideal for applications requiring high power dissipation in a compact package such as motor drives, inverters, and industrial equipment.
FGH40T120SMD by Fairchild Semiconductor

FGH40T120SMD

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
FS400R07A1E3S7BOMA1 by Infineon Technologies

FS400R07A1E3S7BOMA1

Infineon Technologies

Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.
IRG4PC50FPBF by Infineon Technologies

IRG4PC50FPBF

Infineon Technologies

IRG4PC50FPBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 70A max collector current. It has a 190ns max fall time, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals.
IRGP50B60PDPBF by International Rectifier

IRGP50B60PDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Maximum Collector Current (IC): 75 A; Maximum Fall Time (tf): 65 ns;
FS75R12KE3B9BOSA1 by Infineon Technologies

FS75R12KE3B9BOSA1

Infineon Technologies

FS75R12KE3B9BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max voltage of 1200V, max current of 105A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
TSG60N100CEC0 by Taiwan Semiconductor

TSG60N100CEC0

Taiwan Semiconductor

TSG60N100CEC0 by Taiwan Semiconductor is an N-CHANNEL IGBT with 1000V max collector-emitter voltage and 60A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 1510ns.
FD1000R17IE4BOSA2 by Infineon Technologies

FD1000R17IE4BOSA2

Infineon Technologies

Infineon's FD1000R17IE4BOSA2 is an N-CHANNEL IGBT with 1700V max collector-emitter voltage and 1390A max collector current. Ideal for power control applications, it features a built-in diode, thermistor, and isolated case connection. With a turn on time of 720ns and turn off time of 1890ns, this rectangular package transistor operates at up to 175°C.
HGTG40N60B3 by Intersil

HGTG40N60B3

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Terminal Position: SINGLE;
STGW25H120DF2 by STMicroelectronics

STGW25H120DF2

STMicroelectronics

STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.