Infineon Technologies - IRF6723M2DTR1PBF

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IRF6723M2DTR1PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF6723M2DTR1PBF
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 47 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRF6723M2DTR1PBF Datasheet
In Stock244
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 25 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 47 A
Maximum Drain Current (Abs) (ID): 47 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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