Infineon Technologies - IRFHM3911TRPBF

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IRFHM3911TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFHM3911TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29 W; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .115 ohm;
Datasheet IRFHM3911TRPBF Datasheet
In Stock791
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.2 A
Maximum Pulsed Drain Current (IDM): 36 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 29 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .115 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 41 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 11 A
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Pricing (USD)

Qty. Unit Price Ext. Price
791 $0.263 $208.033

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