Infineon Technologies - PTVA104501EHV1R250XTMA1

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PTVA104501EHV1R250XTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number PTVA104501EHV1R250XTMA1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 105 V; Transistor Element Material: SILICON;
Datasheet PTVA104501EHV1R250XTMA1 Datasheet
In Stock400
NAME DESCRIPTION
Minimum Power Gain (Gp): 16.5 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 105 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
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