Infineon Technologies - SIGC10T60S

SIGC10T60S by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC10T60S
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-XUUC-N2; Maximum Collector-Emitter Voltage: 600 V;
Datasheet SIGC10T60S Datasheet
In Stock46
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 20 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 299 ns
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 36 ns
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 235
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
46 - -

Popular Products

Category Top Products