Infineon Technologies - SIGC28T60

  1. Home
  2. Infineon Technologies - SIGC28T60
SIGC28T60 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC28T60
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 600 V;
Datasheet SIGC28T60 Datasheet
In Stock111
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 50 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
111 - -

Popular Products

Category Top Products

FP40R12KE3BOSA1 by Infineon Technologies

FP40R12KE3BOSA1

Infineon Technologies

FP40R12KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 55A max collector current, and 610ns nominal turn off time. It is used for power control applications due to its complex configuration and silicon transistor element material. The package style is flange mount with a rectangular shape and wire terminals.
IXGH100N30C3 by IXYS Corporation

IXGH100N30C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Case Connection: COLLECTOR; No. of Terminals: 3;
TSG60N100CEC0 by Taiwan Semiconductor

TSG60N100CEC0

Taiwan Semiconductor

TSG60N100CEC0 by Taiwan Semiconductor is an N-CHANNEL IGBT with 1000V max collector-emitter voltage and 60A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 1510ns.
IXA60IF1200NA by IXYS Corporation

IXA60IF1200NA

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 88 A; Nominal Turn On Time (ton): 110 ns;
IXYN100N120C3 by Littelfuse

IXYN100N120C3

Littelfuse

Littelfuse IXYN100N120C3 is a N-CHANNEL IGBT with 265ns turn off time, 152A collector current, and 1200V collector-emitter voltage. Ideal for power control applications, it has a max power dissipation of 830W and operates up to 175°C.
FS50R06W1E3BOMA1 by Infineon Technologies

FS50R06W1E3BOMA1

Infineon Technologies

Infineon's FS50R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 70A, and turn off time of 370ns. Ideal for power control applications, it operates at up to 175°C with a max. collector-emitter voltage of 600V in a rectangular package style.
APT75GP120JDQ3 by Advanced Power Technology

APT75GP120JDQ3

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
FP10R12W1T4PB11BPSA1 by Infineon Technologies

FP10R12W1T4PB11BPSA1

Infineon Technologies

Infineon's FP10R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
SKIIP13NAB065V1 by Semikron International

SKIIP13NAB065V1

Semikron International

Semikron International's SKIIP13NAB065V1 is an N-CHANNEL IGBT for POWER CONTROL applications. With 600V VCEsat, 24A IC, and 205ns toff, it offers efficient performance. The FLANGE MOUNT package with 24 terminals and UL RECOGNIZED standard makes it ideal for high-power systems.
IKP20N60TXKSA1 by Infineon Technologies

IKP20N60TXKSA1

Infineon Technologies

IKP20N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 40A. It is designed for power control applications, offering a nominal turn-off time of 299ns and a nominal turn-on time of 36ns.
IXGR16N170AH1 by IXYS Corporation

IXGR16N170AH1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Collector Current (IC): 16 A; No. of Elements: 1;
ISL9V2040D3ST by Fairchild Semiconductor

ISL9V2040D3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
FF450R12ME4BOSA1 by Infineon Technologies

FF450R12ME4BOSA1

Infineon Technologies

FF450R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 675A. This rectangular package IGBT is suitable for applications requiring high power switching capabilities at temperatures up to 150°C.
IRGS14C40LPBF by International Rectifier

IRGS14C40LPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): 260;
HGTG30N60C3D by Fairchild Semiconductor

HGTG30N60C3D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Transistor Element Material: SILICON;
IRG4BC30FD-SPBF by Infineon Technologies

IRG4BC30FD-SPBF

Infineon Technologies

IRG4BC30FD-SPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a built-in diode, 620ns turn-off time, and 100W power dissipation. Ideal for power control applications requiring fast switching capabilities in surface mount configurations.
APT75GP120J by Advanced Power Technology

APT75GP120J

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED;
FB10R06KL4GB1 by Infineon Technologies

FB10R06KL4GB1

Infineon Technologies

Infineon's FB10R06KL4GB1 is an N-CHANNEL IGBT with VCEsat of 2.55V, IC of 15A, and Pmax of 55W. Ideal for applications requiring high power dissipation in complex configurations at up to 150°C operating temperature.
SKM100GB12T4 by Semikron International

SKM100GB12T4

Semikron International

SKM100GB12T4 by Semikron International is an N-CHANNEL IGBT with a max VCEsat of 2.05V and a max collector current (IC) of 160A. It is commonly used for power control applications due to its high voltage rating of 1200V and temperature tolerance up to 175°C.
NGTB15N120FL2WG by Onsemi

NGTB15N120FL2WG

Onsemi

NGTB15N120FL2WG by Onsemi is an N-CHANNEL IGBT with 294W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control units.