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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SN7002NH6433XTMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 60 V; Package Style (Meter): SMALL OUTLINE; |
| Datasheet | SN7002NH6433XTMA1 Datasheet |
| In Stock | 11,459 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
SN7002NH6433XTMA1-ND 448-SN7002NH6433XTMA1DKR 448-SN7002NH6433XTMA1CT SP000924072 448-SN7002NH6433XTMA1TR |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Feedback Capacitance (Crss): | 4.2 pF |
| Maximum Drain Current (ID): | .2 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | 5 ohm |








