Littelfuse - VMO580-02F

  1. Home
  2. Littelfuse - VMO580-02F
VMO580-02F by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number VMO580-02F
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: UNSPECIFIED; Maximum Drain Current (Abs) (ID): 580 A; JESD-30 Code: R-XUFM-X11;
Datasheet VMO580-02F Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 580 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 11
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X11
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0038 ohm
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 580 A
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

AUIRF7316QTR by International Rectifier

AUIRF7316QTR

International Rectifier

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.9 A; No. of Terminals: 8;
AUIRF5210STRL by International Rectifier

AUIRF5210STRL

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 140 A; Transistor Element Material: SILICON;
IRF530PBF-BE3 by Vishay Intertechnology

IRF530PBF-BE3

Vishay Intertechnology

Power Field-Effect Transistors;
IRLML0100TRPBF-1 by International Rectifier

IRLML0100TRPBF-1

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; JEDEC-95 Code: TO-236AB; Terminal Form: GULL WING;
2N7002BKW,115 by NXP Semiconductors

2N7002BKW,115

NXP Semiconductors

2N7002BKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.31A and power dissipation of 0.88W. It operates in enhancement mode, suitable for applications requiring a single configuration such as power management systems or voltage regulators.
ZVN0545GTA by Zetex Plc

ZVN0545GTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: R-PDSO-G4; Maximum Drain Current (ID): .14 A;
NX3008NBKW,115 by NXP Semiconductors

NX3008NBKW,115

NXP Semiconductors

NX3008NBKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.35A and power dissipation of 0.31W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C such as power management systems.
IRFP460PBF by Vishay Siliconix

IRFP460PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain-Source On Resistance: .27 ohm; Avalanche Energy Rating (EAS): 960 mJ;
MRF151G by M/a-com

MRF151G

M/a-com

N-CHANNEL; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (Abs) (ID): 40 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 40 A; Operating Mode: ENHANCEMENT MODE;
IRFP260NPBF by Infineon Technologies

IRFP260NPBF

Infineon Technologies

IRFP260NPBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a 300W Power Dissipation, -55 to 175 °C Operating Temp, and 0.04 ohm On Resistance.
SI7113ADN-T1-GE3 by Vishay Intertechnology

SI7113ADN-T1-GE3

Vishay Intertechnology

SI7113ADN-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 20A IDM, 11.25mJ EAS, and 0.132 ohm Drain-Source On Resistance. Operating from -55 to 150 °C, it has a DUAL Terminal Position and DRAIN Case Connection.
IRF7416TRPBF by Infineon Technologies

IRF7416TRPBF

Infineon Technologies

IRF7416TRPBF by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max pulsed drain current of 45A.
SI4559ADY-T1-GE3 by Vishay Intertechnology

SI4559ADY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI4559ADY-T1-GE3 is a Power FET with N/P-channel, 2 elements, and built-in diode. Ideal for switching applications, it has a max pulsed drain current of 20A and max power dissipation of 3.4W. With a breakdown voltage of 60V and operating temp up to 150°C, it offers reliable performance in various electronic circuits.
SUD50P06-15L-E3 by Vishay Intertechnology

SUD50P06-15L-E3

Vishay Intertechnology

Vishay Intertechnology's SUD50P06-15L-E3 is a P-channel power FET with 60V DS breakdown voltage and 50A max drain current. Ideal for switching applications, it features a built-in diode, 0.015 ohm max on-resistance, and operates in enhancement mode. Suitable for surface mount with Gull Wing terminals, it has a max power dissipation of 136W and can withstand up to 175°C operating temperature.
BSS123 by Sipex

BSS123

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Moisture Sensitivity Level (MSL): 1;
IRF7343TRPBF by Infineon Technologies

IRF7343TRPBF

Infineon Technologies

IRF7343TRPBF by Infineon is a Power FET with N-Channel and P-Channel types. It has 2 separate elements with built-in diode for switching applications. Features include 55V DS breakdown voltage, 38A max pulsed drain current, and 0.05 ohm max drain-source resistance. Ideal for enhancement mode operation in various electronic devices.
FQP27P06 by Fairchild Semiconductor

FQP27P06

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
IRF9358TRPBF by International Rectifier

IRF9358TRPBF

International Rectifier

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 210 mJ;
IRF9540NPBF by Infineon Technologies

IRF9540NPBF

Infineon Technologies

IRF9540NPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 76A Max Pulsed Drain Current, 430mJ Avalanche Energy Rating, and 0.117 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175°C, making it suitable for high-power circuits.
FDMS86101A by Fairchild Semiconductor

FDMS86101A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Transistor Element Material: SILICON; Terminal Position: DUAL;