NXP Semiconductors - 935368316128

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935368316128 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935368316128
Description RF Power Field-Effect Transistors;
Datasheet 935368316128 Datasheet
In Stock3,171
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934061845118 by NXP Semiconductors

934061845118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-CDSO-G2;
BLF6G15L-250PBRN by NXP Semiconductors

BLF6G15L-250PBRN

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 64 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
MRFX1K80HR5 by NXP Semiconductors

MRFX1K80HR5

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
GS66516B-MR by Gan Systems

GS66516B-MR

Gan Systems

GS66516B-MR by Gan Systems is a P-CHANNEL FET for SWITCHING applications. With 650V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at 60A ID. This RF transistor in CHIP CARRIER package offers VERY HIGH FREQUENCY performance.
A2T18H450W19SR6 by NXP Semiconductors

A2T18H450W19SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF861A,112 by NXP Semiconductors

BLF861A,112

NXP Semiconductors

NXP Semiconductors' BLF861A,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18A Drain Current. Commonly used in amplifiers for Ultra High Frequency applications, it features a CERAMIC, METAL-SEALED COFIRED package and operates in Enhancement Mode up to 200°C.
MRF6S20010GNR1 by NXP Semiconductors

MRF6S20010GNR1

NXP Semiconductors

NXP's MRF6S20010GNR1 is a single N-channel RF FET with 68V DS breakdown voltage, ideal for amplifier applications in S band frequencies. It features a plastic/epoxy package, Gull Wing terminals, and operates in enhancement mode up to 225°C.
TGF4212SCCX by Texas Instruments

TGF4212SCCX

Texas Instruments

TGF4212SCCX by Texas Instruments is an N-CHANNEL RF Power FET for amplifier applications. Operating in DEPLETION MODE, it offers a Min DS Breakdown Voltage of 10V and works in the KU BAND frequency range. This surface-mount transistor uses GALLIUM ARSENIDE technology with 4 terminals in a RECTANGULAR package.
VRF151G by Microchip Technology

VRF151G

Microchip Technology

VRF151G by Microchip Technology is a N-CHANNEL RF Power FET with 170V DS Breakdown Voltage, 40A Max Drain Current, and 500W Max Power Dissipation. Commonly used in amplifier applications for Very High Frequency Band operations due to its ceramic-metal sealed co-fired package and dual terminal position.
PTFA220041MV4 by Infineon Technologies

PTFA220041MV4

Infineon Technologies

PTFA220041MV4 by Infineon is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the S BAND frequency range and has a max temperature of 200°C. Ideal for amplifier applications, this transistor is surface mountable and features a plastic/epoxy package body.
934061844112 by NXP Semiconductors

934061844112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDSO-F2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD85025-E by STMicroelectronics

PD85025-E

STMicroelectronics

PD85025-E by STMicroelectronics is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE up to 165°C.
RD15HVF1-101 by Mitsubishi Electric

RD15HVF1-101

Mitsubishi Electric

RD15HVF1-101 by Mitsubishi Electric is an N-CHANNEL RF Power FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers 4A Drain Current and 48W Power Dissipation. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, this transistor has a max temperature of 150°C.
935442486528 by NXP Semiconductors

935442486528

NXP Semiconductors

RF Power Field-Effect Transistors;
BLL6H0514-25,112 by NXP Semiconductors

BLL6H0514-25,112

NXP Semiconductors

NXP Semiconductors' BLL6H0514-25,112 is an N-CHANNEL RF Power FET with 100V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for L BAND applications, offering 2.5A Drain Current and a max temperature of 150°C. Ideal for AMPLIFIER circuits, it features a METAL-OXIDE SEMICONDUCTOR technology in a FLANGE MOUNT package style.
MRF5P21180 by Motorola

MRF5P21180

Motorola

MRF5P21180 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, operating in S BAND. It has a power dissipation of 437.5W and operates at up to 200°C. Commonly used as an amplifier in high-frequency applications due to its dual-element configuration and metal-oxide semiconductor technology.
MW6S010GNR1 by NXP Semiconductors

MW6S010GNR1

NXP Semiconductors

NXP Semiconductors' MW6S010GNR1 is a RF Power FET with 68V DS Breakdown Voltage, suitable for L Band applications. It operates in Enhancement Mode, has 61.4W Max Power Dissipation, and features N-Channel configuration for amplifier circuits.
A2T21H450W19SR6 by NXP Semiconductors

A2T21H450W19SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PTFA091201EV4R250XTMA1 by Wolfspeed

PTFA091201EV4R250XTMA1

Wolfspeed

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934065972112 by NXP Semiconductors

934065972112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK; Transistor Application: AMPLIFIER;