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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BF1201,215 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; |
| Datasheet | BF1201,215 Datasheet |
| In Stock | 333 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
934055959215 BF1201,215-ND BF1201215 568-6151-6 568-6151-2 954-BF1201215 568-6151-1 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .03 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | .2 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | .03 A |









