NXP Semiconductors - BF1202R,215

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BF1202R,215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BF1202R,215
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .03 A;
Datasheet BF1202R,215 Datasheet
In Stock1,113
NAME DESCRIPTION
Other Names: 954-BF1202R215
NXPNXPBF1202R,215
568-6152-6
568-6152-2
568-6152-1
2156-BF1202R215-NXTR
BF1202R,215-ND
BF1202R215
934055957215
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .03 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .2 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .03 A
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