NXP Semiconductors - BF1202R,215

  1. Home
  2. NXP Semiconductors - BF1202R,215
BF1202R,215 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BF1202R,215
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .03 A;
Datasheet BF1202R,215 Datasheet
In Stock2,586
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .2 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .03 A
Maximum Drain Current (Abs) (ID): .03 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,586 $0.184 $475.824

Popular Products

Category Top Products

IPT012N08N5ATMA1 by Infineon Technologies

IPT012N08N5ATMA1

Infineon Technologies

IPT012N08N5ATMA1 by Infineon Technologies is a N-CHANNEL FET with 80V DS Breakdown Voltage, 1200A IDM, and 0.0012 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. RECTANGULAR package style with PLASTIC/EPOXY body material and METAL-OXIDE SEMICONDUCTOR technology.
IRLML2030TRPBF by International Rectifier

IRLML2030TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
DMP4051LK3-13 by Diodes Incorporated

DMP4051LK3-13

Diodes Incorporated

DMP4051LK3-13 by Diodes Inc. is a P-CHANNEL FET with 40V DS Breakdown Voltage, 28.9A IDM, and 0.051 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages, operating at up to 150°C with single terminal position and built-in diode.
IRLML9301TRPBF by Infineon Technologies

IRLML9301TRPBF

Infineon Technologies

Infineon's IRLML9301TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 15A IDM, and 0.064 ohm RDS(ON). With a small outline package style, it operates b/w -55 to 150 °C and has a max power dissipation of 1.3W.
IRLR3110ZTRPBF by International Rectifier

IRLR3110ZTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Form: GULL WING;
BSP89H6327XTSA1 by Infineon Technologies

BSP89H6327XTSA1

Infineon Technologies

Infineon's BSP89H6327XTSA1 is a N-CHANNEL Power FET with 240V DS Breakdown Voltage. It features 1.4A IDM, 0.35A ID, and 6ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and small outline package style.
ZXMP6A13GTA by Zetex Plc

ZXMP6A13GTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSC030P03NS3GAUMA1 by Infineon Technologies

BSC030P03NS3GAUMA1

Infineon Technologies

BSC030P03NS3GAUMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 200A IDM, and 0.0046 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. The transistor has a small outline package style and can withstand temperatures from -55 to 150 °C.
IRF3205ZSTRLPBF by International Rectifier

IRF3205ZSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (Abs) (ID): 110 A; No. of Terminals: 2;
FDB44N25TM by Fairchild Semiconductor

FDB44N25TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 307 W; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
IRFH5010TRPBF by Infineon Technologies

IRFH5010TRPBF

Infineon Technologies

The Infineon Technologies IRFH5010TRPBF is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 0.009 ohm RDS(on). Ideal for SWITCHING applications, it features a 400A IDM and 227mJ EAS. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C.
IRLML6401TRPBF by Infineon Technologies

IRLML6401TRPBF

Infineon Technologies

IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
IPB200N25N3GATMA1 by Infineon Technologies

IPB200N25N3GATMA1

Infineon Technologies

Infineon's IPB200N25N3GATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 0.02 ohm max RDS(on), and 256A IDM. Ideal for switching applications, it operates in enhancement mode with a built-in diode. The transistor features GULL WING terminals, can handle up to 175°C, and has an EAS of 320mJ.
FDS4559_NL by Fairchild Semiconductor

FDS4559_NL

Fairchild Semiconductor

FDS4559_NL by Fairchild Semiconductor is a Power FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 4.5A, on-resistance of 0.055 ohm, and operates at up to 175°C. Package: PLASTIC/EPOXY, GULL WING terminals in SMALL OUTLINE style.
2N7000 by Philips Semiconductors

2N7000

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
FDS4675 by Onsemi

FDS4675

Onsemi

FDS4675 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and ID of 11A, with 0.013 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 175 °C.
IRFZ44NLPBF by Infineon Technologies

IRFZ44NLPBF

Infineon Technologies

IRFZ44NLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). Operating at up to 175°C, it has a power dissipation of 94W in an IN-LINE package.
SI7415DN-T1-GE3 by Vishay Intertechnology

SI7415DN-T1-GE3

Vishay Intertechnology

SI7415DN-T1-GE3 by Vishay Intertechnology is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3.6A and max power dissipation of 3.8W.
NCV8406ASTT1G by Onsemi

NCV8406ASTT1G

Onsemi

NCV8406ASTT1G by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 1.81W Power Dissipation. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in temperatures from -40 to 150 °C.
PSMN040-100MSEX by Nexperia

PSMN040-100MSEX

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Avalanche Energy Rating (EAS): 54 mJ; Transistor Application: SWITCHING;