NXP Semiconductors - BGD704/09,112

  1. Home
  2. NXP Semiconductors - BGD704/09,112
BGD704/09,112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD704/09,112
Description RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Maximum Operating Temperature: 100 Cel; No. of Functions: 1;
Datasheet BGD704/09,112 Datasheet
In Stock258
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Functions: 1
Package Equivalence Code: SOT-115J
Technology: HYBRID
Maximum Operating Temperature: 100 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 435 mA
Minimum Operating Temperature: -20 Cel
Power Supplies (V): 24
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
258 - -

Popular Products

Category Top Products

HMC311SC70ETR by Analog Devices

HMC311SC70ETR

Analog Devices

Analog Devices' HMC311SC70ETR is a GAAS RF amplifier with 11dB gain, operating from 0-8000MHz. It has a max input power of 10dBm and requires a 5V supply, making it ideal for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40 to 85°C.
QPA1027 by Qorvo

QPA1027

Qorvo

Qorvo's QPA1027 is a GAN technology RF amplifier with 31dB gain, operating from 2800-3500MHz. It has a max input power of 29dBm and VSWR of 3, suitable for narrowband high-power applications. With surface mount feature and 50 ohm impedance, it is ideal for RF & microwave systems requiring high performance in plastic/epoxy package.
BGA614H6327XTSA1 by Infineon Technologies

BGA614H6327XTSA1

Infineon Technologies

Infineon's BGA614H6327XTSA1 is a wide band low power RF amplifier with 17.5 dB gain and 10 dBm max input power. Operating from -65 to 150 °C, it covers frequencies from 0 to 2400 MHz, making it ideal for RF & microwave applications requiring high performance in a compact form factor.
BGA3018,115 by NXP Semiconductors

BGA3018,115

NXP Semiconductors

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
MGA-81563-BLK by Hewlett Packard

MGA-81563-BLK

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 100 MHz;
HMC478SC70E by Analog Devices

HMC478SC70E

Analog Devices

Analog Devices' HMC478SC70E is a wide band low power RF amplifier with 23 dB gain and 5 dBm CW input power. Operating from -40 to 85°C, it has a max frequency of 4 GHz. Ideal for RF & microwave applications, this component features a plastic/epoxy package and requires a 5V supply at 82 mA.
HMC505LP4 by Analog Devices

HMC505LP4

Analog Devices

Analog Devices' HMC505LP4 is a RF amplifier with 24 terminals, operating from -40 to 85°C. It has a VSWR of 2, operates at frequencies b/w 6800-7400 MHz, and has a characteristic impedance of 50Ω. Ideal for narrowband low-power applications requiring surface mount technology.
SGA3563Z by Qorvo

SGA3563Z

Qorvo

SGA3563Z by Qorvo is a wide band low power RF amplifier with 19.5 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
MGA-81563-TR1G by Broadcom

MGA-81563-TR1G

Broadcom

Broadcom's MGA-81563-TR1G is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C.
PHA-102+ by Mini-circuits

PHA-102+

Mini-circuits

WIDE BAND LOW POWER;
HMC478MP86ETR by Analog Devices

HMC478MP86ETR

Analog Devices

Analog Devices' HMC478MP86ETR is a wide band low power RF amplifier with 5V power supply, operating from -40°C to 85°C. This bipolar technology device has 4 terminals and surface mounting feature, making it ideal for RF & microwave applications requiring high performance in a compact package.
GRF2071 by Guerrilla Rf

GRF2071

Guerrilla Rf

GRF2071 by Guerrilla Rf is a PHEMT technology RF amplifier with 18 dB gain, operating from 700 MHz to 2700 MHz. It has a max input power of 23 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40°C to 105°C.
ADL9006ACGZN-R7 by Analog Devices

ADL9006ACGZN-R7

Analog Devices

RF/Microwave Amplifiers;
HMC8411LP2FETR by Analog Devices

HMC8411LP2FETR

Analog Devices

Analog Devices' HMC8411LP2FETR is a wide band low power RF amplifier with 11 dB gain and 20 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.
XP1039-QJ-0G0T by Mimix Broadband

XP1039-QJ-0G0T

Mimix Broadband

WIDE BAND HIGH POWER; Gain: 15.5 dB; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 25 dBm; Terminal Finish: Matte Tin (Sn);
HMC960LP4E by Hittite Microwave

HMC960LP4E

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Gain: 0 dB;
GALI-6F+ by Mini-circuits

GALI-6F+

Mini-circuits

GALI-6F+ by Mini-circuits is a wide band low power RF amplifier with 10 dB gain, operating from 0 to 4000 MHz. It has a max input power of 20 dBm and VSWR of 2.2, suitable for surface mount applications in RF & microwave systems.
RF6886SR by Rf Micro Devices

RF6886SR

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 12 dBm;
AG303-86G by Triquint Semiconductor

AG303-86G

Triquint Semiconductor

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 10 dBm;