MRF9002NR2 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	MRF9002NR2
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4 W; Case Connection: SOURCE; Package Body Material: PLASTIC/EPOXY;
Datasheet	MRF9002NR2 Datasheet
In Stock	4,326

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	16
Maximum Power Dissipation (Abs):	4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G16
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Moisture Sensitivity Level (MSL):	3
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	65 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	240

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,326	$16.180	$69,994.680

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