NXP Semiconductors - PMDPB42UN,115

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PMDPB42UN,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMDPB42UN,115
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.33 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 3.9 A; Maximum Drain Current (ID): 3.9 A;
Datasheet PMDPB42UN,115 Datasheet
In Stock2,931
NAME DESCRIPTION
Other Names: NEXNXPPMDPB42UN,115
PMDPB42UN,115-ND
568-10758-6
568-10758-1
568-10758-2
2156-PMDPB42UN115-NXTR-ND
2156-PMDPB42UN115
2156-PMDPB42UN,115-ND
934066485115
Maximum Power Dissipation (Abs): 8.33 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3.9 A
Maximum Drain Current (Abs) (ID): 3.9 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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Pricing (USD)

Qty. Unit Price Ext. Price
2,931 $0.217 $636.027

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