NVTYD015N04CLT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVTYD015N04CLT1G
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-X6; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 40 V;
Datasheet	NVTYD015N04CLT1G Datasheet
In Stock	296

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	29 A
Surface Mount:	YES
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-X6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.025 ohm
Maximum Feedback Capacitance (Crss):	9 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	29 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
296	-	-

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