NXH006P120MNF2PTG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH006P120MNF2PTG
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 950 W; Transistor Element Material: SILICON CARBIDE; Package Body Material: UNSPECIFIED;
Datasheet	NXH006P120MNF2PTG Datasheet
In Stock	44

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	49 pF
Maximum Drain Current (ID):	304 A
Maximum Pulsed Drain Current (IDM):	912 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	36
Minimum DS Breakdown Voltage:	1200 V
Maximum Power Dissipation (Abs):	950 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X36
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.0072 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
44	-	-

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