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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NXH006P120MNF2PTG |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 950 W; Transistor Element Material: SILICON CARBIDE; Package Body Material: UNSPECIFIED; |
| Datasheet | NXH006P120MNF2PTG Datasheet |
| In Stock | 44 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Transistor Element Material: | SILICON CARBIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 304 A |
| Maximum Pulsed Drain Current (IDM): | 912 A |
| Surface Mount: | NO |
| No. of Terminals: | 36 |
| Maximum Power Dissipation (Abs): | 950 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X36 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .0072 ohm |
| Other Names: | 488-NXH006P120MNF2PTG |
| Maximum Feedback Capacitance (Crss): | 49 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -40 Cel |
| Minimum DS Breakdown Voltage: | 1200 V |








