Renesas Electronics - MBB100GS12A

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MBB100GS12A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number MBB100GS12A
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 100 A; Additional Features: HIGH SPEED, ULTRA SOFT FAST RECOVERY; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet MBB100GS12A Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Nominal Turn On Time (ton): 350 ns
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
No. of Elements: 6
Additional Features: HIGH SPEED, ULTRA SOFT FAST RECOVERY
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
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