Sharp Corporation - PT100MF0MP1

  1. Home
  2. Sharp Corporation - PT100MF0MP1
PT100MF0MP1 by Sharp Corporation

Image shown is a representation only.

Manufacturer Sharp Corporation
Manufacturer's Part Number PT100MF0MP1
Description PHOTO TRANSISTOR; Terminal Finish: Gold (Au); Peak Wavelength (nm): 910; No. of Functions: 1; Nominal Light Current: 1.15 mA; Maximum Operating Temperature: 85 Cel;
Datasheet PT100MF0MP1 Datasheet
NAME DESCRIPTION
Other Names: 1855-1059-1-ND
1855-1059-2-ND
425-1007-2
425-1007-1
425-1007-2-ND
1855-PT100MF0MP1CT
425-1007-1-ND
1855-PT100MF0MP1TR
1855-1059-2
1855-PT100MF0MP1DKR
1855-1059-1
Maximum Dark Current: 100 nA
Shape: ROUND
Configuration: SINGLE
Size: 1.6 mm
Terminal Finish: Gold (Au)
JESD-609 Code: e4
Minimum Operating Temperature: -30 Cel
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 1.15 mA
Peak Wavelength (nm): 910
Maximum Operating Temperature: 85 Cel
Minimum Collector-emitter Breakdown Voltage: 35 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SD2440-004 by Honeywell Sensing And Control

SD2440-004

Honeywell Sensing And Control

SD2440-004 by Honeywell is a PHOTO TRANSISTOR with max operating temp of 125°C and min of -55°C. It has a max power dissipation of 0.125W, dark current of 100nA, and response time of 0.000015s. Ideal for optoelectronic applications requiring through hole mounting.
SFH317-3 by Infineon Technologies

SFH317-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0; Maximum On State Current: .05 A;
QSB363 by Onsemi

QSB363

Onsemi

QSB363 by Onsemi is a single configuration phototransistor with a size of 1.9 mm. It operates at temperatures ranging from -25 to 85 °C and has a peak wavelength of 940 nm. It is commonly used in applications requiring infrared sensing or detection.
SFH310-3 by Infineon Technologies

SFH310-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;
OP802WSL by Optek Technology

OP802WSL

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Shape: ROUND; Size: 4.65 mm; Infrared (IR) Range: YES;
TIL623 by Texas Instruments

TIL623

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;
L14C2 by Renesas Electronics

L14C2

Renesas Electronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 200 Cel; Maximum Response Time: .000005 s; Maximum Power Dissipation: .6 W; Minimum Operating Temperature: -60 Cel;
TEMT1020 by Vishay Telefunken

TEMT1020

Vishay Telefunken

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 7 mA; Maximum Dark Current: 200 nA; Maximum Response Time: .000002 s;
TPS607A by Toshiba

TPS607A

Toshiba

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 75 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 720;
TPS614 by Toshiba

TPS614

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 40 V; Peak Wavelength (nm): 800;
SFH3400-3 by Infineon Technologies

SFH3400-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; Maximum Dark Current: 200 nA; JESD-609 Code: e0;
TIL609 by Texas Instruments

TIL609

Texas Instruments

TIL609 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for applications requiring precise light detection in various environments.
QSE122 by Onsemi

QSE122

Onsemi

QSE122 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W. Ideal for applications requiring IR detection due to its fast response time and collector-emitter breakdown voltage of 30V.
SFH320FA-3/-4 by Infineon Technologies

SFH320FA-3/-4

Infineon Technologies

Infineon's SFH320FA-3/-4 phototransistors operate b/w -40°C to 100°C, with peak wavelength of 900nm. They have a max power dissipation of 0.165W and response time of 0.000008s. Ideal for surface mount applications, these devices can handle a max on-state current of 0.015A.
SDP8405-003 by Honeywell Sensing And Control

SDP8405-003

Honeywell Sensing And Control

SDP8405-003 by Honeywell Sensing And Control is a PHOTO TRANSISTOR with a max operating temperature of 100°C and a min operating temperature of -40°C. It has a max power dissipation of 0.07W and a max dark current of 100nA. This through-hole mount optoelectronic component is suitable for various applications requiring fast response time.
SFH300 by Infineon Technologies

SFH300

Infineon Technologies

Infineon's SFH300 phototransistor operates b/w -55°C to 100°C with peak wavelength of 850nm. It has a max power dissipation of 0.47W and response time of 0.00001s. Ideal for applications requiring through hole mounting, it can handle a max on state current of 0.05A.
TPS621(B,F) by Toshiba

TPS621(B,F)

Toshiba

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; JESD-609 Code: e0; Maximum Operating Temperature: 85 Cel;
TIL404 by Texas Instruments

TIL404

Texas Instruments

TIL404 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.05W and response time of 8μs. Ideal for applications requiring through hole mounting, with max dark current of 25nA.
QSB320F by Onsemi

QSB320F

Onsemi

The Onsemi QSB320F is a single phototransistor with peak wavelength of 880nm. It operates b/w -55 °C to 100°C, with max power dissipation of 0.165W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and surface mounting feature.
TPS625(C) by Toshiba

TPS625(C)

Toshiba

PHOTO DARLINGTON; Minimum Collector-emitter Breakdown Voltage: 30 V; Size: 1.5 mm; Minimum Operating Temperature: -25 Cel; Maximum Operating Temperature: 85 Cel; Infrared (IR) Range: YES;