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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | TPIC2701MJB |
| Description | N-CHANNEL; Configuration: COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): .5 A; Maximum Pulsed Drain Current (IDM): 3 A; No. of Terminals: 24; |
| Datasheet | TPIC2701MJB Datasheet |
| In Stock | 499 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 22 mJ |
| Package Body Material: | CERAMIC, GLASS-SEALED |
| Configuration: | COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .5 A |
| Maximum Pulsed Drain Current (IDM): | 3 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 24 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-GDIP-T24 |
| No. of Elements: | 7 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .9 ohm |
