Toshiba - MIG20J805E

MIG20J805E by Toshiba

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Manufacturer	Toshiba
Manufacturer's Part Number	MIG20J805E
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 600 V;
Datasheet	MIG20J805E Datasheet

MIG20J805E Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	20 A
Maximum Power Dissipation (Abs):	60 W
Maximum Collector-Emitter Voltage:	600 V
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	2.6 V

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