Toshiba - SSM6J511NULF(T

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SSM6J511NULF(T by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6J511NULF(T
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Element Material: SILICON; No. of Terminals: 6;
Datasheet SSM6J511NULF(T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 40 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 12 V
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (Abs) (ID): 14 A
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0192 ohm
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