Vishay Intertechnology - SI7852DP-T1

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SI7852DP-T1 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7852DP-T1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5.2 W; Terminal Finish: Tin/Lead (Sn/Pb); Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet SI7852DP-T1 Datasheet
In Stock702
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 7.6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Maximum Power Dissipation (Abs): 5.2 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 7.6 A
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