Part | RoHS | Manufacturer | Converter Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | No. of Analog In Channels | Surface Mount | Maximum Supply Voltage | Maximum Analog Input Voltage | Sample Rate | No. of Functions | Technology | Screening Level | Nominal Bandwidth | No. of Bits | Maximum Supply Current | Maximum Linearity Error (EL) | Nominal Supply Voltage | Output Bit Code | Power Supplies (V) | Nominal Negative Supply Voltage | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Supply Voltage | Terminal Pitch | Maximum Operating Temperature | Minimum Analog Input Voltage | Output Format | Minimum Operating Temperature | Terminal Finish | Sample and Hold/Track and Hold | Terminal Position | Maximum Conversion Time | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Width | Qualification | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Input Bit Code |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Metal-Sealed Cofired |
1 |
No |
4.15 V |
75 kHz |
1 |
MIL-STD-883 Class B |
12 |
0.0244 % |
5 V |
Binary |
In-Line |
0.1 in (2.54 mm) |
125 °C (257 °F) |
0 mV |
Serial |
-55 °C (-67 °F) |
Track |
Dual |
8.5 µs |
R-CDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
||||||||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
28 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
2 |
No |
4.5 V |
20 kHz |
1 |
CMOS |
MIL-PRF-38535 Class Q |
16 |
0.0046 % |
5 V |
Binary, 2's Complement Binary |
-5 V |
In-Line |
125 °C (257 °F) |
-4.5 V |
Serial |
-55 °C (-67 °F) |
Gold |
Sample |
Dual |
40.63 µs |
R-GDIP-T28 |
No |
e4 |
|||||||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Metal-Sealed Cofired |
2 |
No |
5.3 V |
108 kHz |
1 |
CMOS |
12 |
0.0122 % |
3 V |
Binary |
3/5 V |
In-Line |
DIP8,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
0 mV |
Serial |
-55 °C (-67 °F) |
Tin Lead |
Track |
Dual |
7 µs |
R-CDIP-T8 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
20 |
DIP |
Rectangular |
Ceramic |
1 |
No |
4.116 V |
133 kHz |
1 |
MIL-STD-883 |
12 |
5 V |
Binary, 2's Complement Binary |
-5 V |
In-Line |
125 °C (257 °F) |
-4.116 V |
Serial |
-55 °C (-67 °F) |
Track |
Dual |
10 µs |
R-CDIP-T20 |
|||||||||||||||||||||||||
Analog Devices |
Military |
Through-Hole |
24 |
DIP |
Rectangular |
Ceramic |
4 |
No |
5 V |
CMOS |
38535Q/M;38534H;883B |
8 |
5 V |
Binary, Offset Binary |
5 V |
In-Line |
DIP24,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-XDIP-T24 |
No |
e0 |
||||||||||||||||||||||||
Analog Devices |
Analog To Digital Converter |
Military |
No Lead |
20 |
QCCN |
Square |
Ceramic |
1 |
Yes |
10 V |
1 |
CMOS |
38535Q/M;38534H;883B |
8 |
0.2 % |
5 V |
Binary |
5 V |
Chip Carrier |
LCC20,.35SQ |
Analog to Digital Converters |
0.05 in (1.27 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Quad |
S-XQCC-N20 |
No |
|||||||||||||||||||||||
|
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
No Lead |
28 |
HQCCN |
Square |
2 |
Yes |
125 kHz |
1 |
BICMOS |
12 |
0.0244 % |
5 V |
Binary |
-12 V |
Chip Carrier, Heat Sink/Slug |
0.05 in (1.27 mm) |
125 °C (257 °F) |
Parallel, Word |
-55 °C (-67 °F) |
Quad |
5 µs |
S-XQCC-N28 |
0.1 in (2.54 mm) |
0.451 in (11.455 mm) |
0.451 in (11.455 mm) |
||||||||||||||||||||||
Analog Devices |
Military |
Through-Hole |
28 |
DIP |
Rectangular |
Ceramic |
8 |
No |
5 V |
CMOS |
38535Q/M;38534H;883B |
8 |
5 V |
Binary, Offset Binary |
5 V |
In-Line |
DIP28,.6 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-XDIP-T28 |
No |
e0 |
||||||||||||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
J Bend |
44 |
QCCJ |
Square |
Ceramic, Metal-Sealed Cofired |
1 |
Yes |
5 V |
50 kHz |
1 |
CMOS |
MIL-STD-883 |
16 |
0.0015 % |
5 V |
Binary, Offset Binary |
-5 V |
Chip Carrier |
0.05 in (1.27 mm) |
125 °C (257 °F) |
-2.5 V |
Serial, Parallel, Word |
-55 °C (-67 °F) |
Tin Lead |
Track |
Quad |
16.25 µs |
S-CQCC-J44 |
0.135 in (3.43 mm) |
0.65 in (16.51 mm) |
No |
e0 |
0.65 in (16.51 mm) |
|||||||||||||||
|
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Metal-Sealed Cofired |
1 |
No |
3.65 V |
73 kHz |
1 |
BICMOS |
12 |
0.0244 % |
3 V |
Binary |
3/3.3 V |
In-Line |
DIP8,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
0 mV |
Serial |
-55 °C (-67 °F) |
Track |
Dual |
7.5 µs |
R-CDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
30 s |
260 °C (500 °F) |
||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
28 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
8 |
No |
5 V |
1 |
CMOS |
8 |
5 mA |
0.293 % |
5 V |
Binary, Offset Binary, Complementary Binary |
5 V |
In-Line |
DIP28,.6 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-5 V |
Parallel, 8 Bits |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T28 |
1 |
0.232 in (5.89 mm) |
0.6 in (15.24 mm) |
No |
e0 |
245 °C (473 °F) |
|||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
24 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
5 V |
1 |
CMOS |
12 |
12 mA |
0.012 % |
5 V |
Offset Binary, Complementary Offset Binary |
5,-12/-15 V |
-15 V |
In-Line |
DIP24,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
0 mV |
Parallel, 8 Bits |
-55 °C (-67 °F) |
Tin Lead |
Dual |
3.25 s |
R-GDIP-T24 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
245 °C (473 °F) |
|||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
2 |
No |
5.3 V |
10.8 kHz |
1 |
CMOS |
10 |
0.0488 % |
Binary |
3/5 V |
In-Line |
DIP8,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
0 mV |
Serial |
-55 °C (-67 °F) |
Tin Lead |
Track |
Dual |
7 µs |
R-GDIP-T8 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
|||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
18 |
DIP |
Rectangular |
Ceramic |
1 |
No |
10 V |
1 |
CMOS |
38535Q/M;38534H;883B |
8 |
0.3 % |
5 V |
Offset Binary |
5 V |
In-Line |
DIP18,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-XDIP-T18 |
No |
e0 |
|||||||||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
J Bend |
44 |
QCCJ |
Square |
Ceramic, Metal-Sealed Cofired |
1 |
Yes |
5 V |
50 kHz |
1 |
CMOS |
MIL-STD-883 |
16 |
0.0015 % |
5 V |
Binary, Offset Binary |
-5 V |
Chip Carrier |
0.05 in (1.27 mm) |
125 °C (257 °F) |
-2.5 V |
Serial, Parallel, Word |
-55 °C (-67 °F) |
Tin Lead |
Track |
Quad |
16.25 µs |
S-CQCC-J44 |
0.135 in (3.43 mm) |
0.65 in (16.51 mm) |
No |
e0 |
0.65 in (16.51 mm) |
|||||||||||||||
Analog Devices |
Military |
Through-Hole |
28 |
DIP |
Rectangular |
Ceramic |
8 |
No |
5 V |
CMOS |
8 |
5 V |
Binary, Offset Binary |
5 V |
In-Line |
DIP28,.6 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-XDIP-T28 |
e0 |
||||||||||||||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
28 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
2 |
No |
4.5 V |
20 kHz |
1 |
CMOS |
MIL-PRF-38535 Class Q |
16 |
0.0031 % |
5 V |
Binary, 2's Complement Binary |
-5 V |
In-Line |
125 °C (257 °F) |
-4.5 V |
Serial |
-55 °C (-67 °F) |
Tin Lead |
Sample |
Dual |
40.63 µs |
R-GDIP-T28 |
No |
e0 |
|||||||||||||||||||
|
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Ceramic, Metal-Sealed Cofired |
1 |
No |
3.65 V |
73 kHz |
1 |
BICMOS |
12 |
0.0122 % |
3 V |
Binary |
3/3.3 V |
In-Line |
DIP8,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
0 mV |
Serial |
-55 °C (-67 °F) |
Track |
Dual |
7.5 µs |
R-CDIP-T8 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
30 s |
260 °C (500 °F) |
||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
40 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
5 V |
63 kHz |
1 |
CMOS |
MIL-STD-883 |
12 |
0.0122 % |
5 V |
Binary, Offset Binary |
-5 V |
In-Line |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-2.5 V |
Serial, Parallel, Word |
-55 °C (-67 °F) |
Tin Lead |
Track |
Dual |
12.25 µs |
R-GDIP-T40 |
0.23 in (5.84 mm) |
0.6 in (15.24 mm) |
No |
e0 |
2.06 in (52.32 mm) |
|||||||||||||||
Analog Devices |
Military |
Through-Hole |
20 |
DIP |
Rectangular |
Ceramic |
8 |
No |
5 V |
38535Q/M;38534H;883B |
12 |
0.024 % |
Binary, 2's Complement Binary |
5/±5 V |
In-Line |
DIP20,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-XDIP-T20 |
1 |
No |
e0 |
20 s |
240 °C (464 °F) |
||||||||||||||||||||||
Analog Devices |
Military |
No Lead |
20 |
QCCN |
Square |
Plastic/Epoxy |
8 |
Yes |
5 V |
38535Q/M;38534H;883B |
12 |
0.024 % |
Binary, 2's Complement Binary |
5/±5 V |
Chip Carrier |
LCC20,.35SQ |
Analog to Digital Converters |
0.05 in (1.27 mm) |
125 °C (257 °F) |
-55 °C (-67 °F) |
Quad |
S-PQCC-N20 |
No |
|||||||||||||||||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
24 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
5 V |
1 |
BICMOS |
12 |
10 mA |
0.024 % |
5 V |
Binary, Offset Binary |
5,-12/-15 V |
-12 V |
In-Line |
DIP24,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-5 V |
Parallel, Word |
-55 °C (-67 °F) |
Tin Lead |
Dual |
5.2 s |
R-GDIP-T24 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
245 °C (473 °F) |
1.25 in (31.75 mm) |
||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
24 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
5 V |
1 |
BICMOS |
12 |
10 mA |
0.018 % |
5 V |
Binary, Offset Binary |
5,-12/-15 V |
-12 V |
In-Line |
DIP24,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-5 V |
Parallel, Word |
-55 °C (-67 °F) |
Tin Lead |
Dual |
5.2 s |
R-GDIP-T24 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
245 °C (473 °F) |
1.25 in (31.75 mm) |
||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
24 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
5 V |
1 |
BICMOS |
12 |
10 mA |
0.018 % |
5 V |
Binary, Offset Binary |
5,-12/-15 V |
-12 V |
In-Line |
DIP24,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-5 V |
Parallel, Word |
-55 °C (-67 °F) |
Tin Lead |
Dual |
10.4 s |
R-GDIP-T24 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
245 °C (473 °F) |
1.25 in (31.75 mm) |
||||||||||||
Analog Devices |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
24 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
5 V |
1 |
BICMOS |
12 |
10 mA |
0.024 % |
5 V |
Binary, Offset Binary |
5,-12/-15 V |
-12 V |
In-Line |
DIP24,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-5 V |
Parallel, Word |
-55 °C (-67 °F) |
Tin Lead |
Dual |
10.4 s |
R-GDIP-T24 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
1.25 in (31.75 mm) |
|||||||||||||
Onsemi |
Analog To Digital Converter, Proprietary Method |
Military |
Through-Hole |
16 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
100 mV |
25 MHz |
1 |
MIL-STD-883 |
4 |
5 V |
Binary, Offset 2's Complement |
-5.2 V |
In-Line |
125 °C (257 °F) |
-2.1 V |
Parallel, 4 Bits |
-55 °C (-67 °F) |
Dual |
40 ns |
R-GDIP-T16 |
No |
||||||||||||||||||||||||
Onsemi |
Analog To Digital Converter, Proprietary Method |
Military |
Through-Hole |
16 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
100 mV |
25 MHz |
1 |
MIL-STD-883 |
4 |
5 V |
Binary, Offset 2's Complement |
-5.2 V |
In-Line |
125 °C (257 °F) |
-2.1 V |
Parallel, 4 Bits |
-55 °C (-67 °F) |
Dual |
40 ns |
R-GDIP-T16 |
No |
||||||||||||||||||||||||
|
STMicroelectronics |
Analog To Digital Converter, Proprietary Method |
Military |
Gull Wing |
48 |
HSSOP |
Rectangular |
300k Rad(Si) |
Plastic/Epoxy |
1 |
Yes |
2 V |
20 MHz |
1 |
CMOS |
14 |
2.5 V |
Binary, 2's Complement Binary |
2.5 V |
Small Outline, Heat Sink/Slug, Shrink Pitch |
SSOP48,.48 |
Analog to Digital Converters |
0.025 in (0.635 mm) |
125 °C (257 °F) |
0 mV |
Parallel, Word |
-55 °C (-67 °F) |
Sample |
Dual |
R-PDSO-G48 |
0.107 in (2.72 mm) |
0.38 in (9.65 mm) |
No |
0.62 in (15.75 mm) |
||||||||||||||||
STMicroelectronics |
Analog To Digital Converter Subsystem |
Military |
Gull Wing |
48 |
SSOP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
1 |
Yes |
650 mV |
50 MHz |
1 |
MIL-PRF-38535 Class V |
12 |
0.0488 % |
2.5 V |
Binary |
Small Outline, Shrink Pitch |
0.025 in (0.635 mm) |
125 °C (257 °F) |
400 mV |
Parallel, Word |
-55 °C (-67 °F) |
Dual |
R-CDSO-G48 |
0.114 in (2.9 mm) |
0.38 in (9.65 mm) |
Yes |
0.62 in (15.745 mm) |
||||||||||||||||||||
|
STMicroelectronics |
Analog To Digital Converter, Successive Approximation |
Military |
Flat |
16 |
SOF |
Rectangular |
300k Rad(Si) |
Plastic/Epoxy |
8 |
Yes |
3.6 V |
1 MHz |
1 |
CMOS |
12 |
0.022 % |
3.3 V |
Binary |
Small Outline |
0.05 in (1.27 mm) |
125 °C (257 °F) |
-2.7 V |
Serial |
-55 °C (-67 °F) |
Track |
Dual |
R-PDSO-F16 |
0.107 in (2.72 mm) |
0.272 in (6.905 mm) |
0.391 in (9.94 mm) |
|||||||||||||||||||
|
STMicroelectronics |
Analog To Digital Converter, Pipelined |
Military |
Gull Wing |
48 |
HSSOP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
1 |
Yes |
2 V |
20 MHz |
1 |
CMOS |
MIL-PRF-38535 Class V |
14 |
0.018311 % |
2.5 V |
Binary, 2's Complement Binary |
2.5 V |
Small Outline, Heat Sink/Slug, Shrink Pitch |
SSOP48,.48 |
Analog to Digital Converters |
0.025 in (0.635 mm) |
125 °C (257 °F) |
0 mV |
Parallel, Word |
-55 °C (-67 °F) |
Sample |
Dual |
R-CDSO-G48 |
0.107 in (2.72 mm) |
0.38 in (9.65 mm) |
No |
0.62 in (15.75 mm) |
||||||||||||||
|
STMicroelectronics |
Analog To Digital Converter, Proprietary Method |
Military |
Gull Wing |
48 |
HSSOP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
1 |
Yes |
500 mV |
20 MHz |
1 |
MIL-PRF-38535 Class V |
14 |
50 mA |
0.0122 % |
2.5 V |
Binary |
2.5 V |
Small Outline, Heat Sink/Slug, Shrink Pitch |
SSOP48,.48 |
Analog to Digital Converters |
0.025 in (0.635 mm) |
125 °C (257 °F) |
400 mV |
Parallel, Word |
-55 °C (-67 °F) |
Dual |
50 ns |
R-CDSO-G48 |
0.114 in (2.9 mm) |
0.38 in (9.65 mm) |
Yes |
0.62 in (15.745 mm) |
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STMicroelectronics |
Analog To Digital Converter, Successive Approximation |
Military |
Flat |
16 |
DFP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
8 |
Yes |
3.6 V |
1 MHz |
2 |
CMOS |
MIL-PRF-38535 Class V |
12 |
0.0269 % |
3.3 V |
Binary |
Flatpack |
125 °C (257 °F) |
-3.6 V |
Serial |
-55 °C (-67 °F) |
Track |
Dual |
R-CDFP-F16 |
Yes |
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STMicroelectronics |
Analog To Digital Converter, Successive Approximation |
Military |
Flat |
16 |
DFP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
8 |
Yes |
3.6 V |
1 MHz |
2 |
CMOS |
MIL-PRF-38535 Class V |
12 |
0.0269 % |
3.3 V |
Binary |
Flatpack |
125 °C (257 °F) |
-3.6 V |
Serial |
-55 °C (-67 °F) |
Dual |
R-CDFP-F16 |
Yes |
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STMicroelectronics |
Analog To Digital Converter, Successive Approximation |
Military |
No Lead |
21 |
DIE |
Rectangular |
300k Rad(Si) |
8 |
Yes |
3.6 V |
1 MHz |
2 |
CMOS |
MIL-PRF-38535 Class V |
12 |
0.0269 % |
3.3 V |
Binary |
Uncased Chip |
125 °C (257 °F) |
-3.6 V |
Serial |
-55 °C (-67 °F) |
Track |
Upper |
R-XUUC-N21 |
Yes |
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|
STMicroelectronics |
Analog To Digital Converter Subsystem |
Military |
Gull Wing |
48 |
SSOP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
1 |
Yes |
650 mV |
50 MHz |
1 |
CMOS |
MIL-PRF-38535 Class V |
12 |
0.0488 % |
2.5 V |
Binary |
2.5 V |
Small Outline, Shrink Pitch |
SSOP48,.48 |
Analog to Digital Converters |
0.025 in (0.635 mm) |
125 °C (257 °F) |
400 mV |
Parallel, Word |
-55 °C (-67 °F) |
Dual |
R-CDSO-G48 |
0.114 in (2.9 mm) |
0.38 in (9.65 mm) |
Yes |
0.62 in (15.745 mm) |
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STMicroelectronics |
Analog To Digital Converter, Successive Approximation |
Military |
Flat |
16 |
SOF |
Rectangular |
300k Rad(Si) |
Plastic/Epoxy |
8 |
Yes |
3.6 V |
1 MHz |
1 |
CMOS |
12 |
0.022 % |
3.3 V |
Binary |
Small Outline |
0.05 in (1.27 mm) |
125 °C (257 °F) |
-2.7 V |
Serial |
-55 °C (-67 °F) |
Track |
Dual |
R-PDSO-F16 |
0.107 in (2.72 mm) |
0.272 in (6.905 mm) |
0.391 in (9.94 mm) |
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|
STMicroelectronics |
Analog To Digital Converter, Pipelined |
Military |
Gull Wing |
48 |
HSSOP |
Rectangular |
300k Rad(Si) |
Ceramic, Metal-Sealed Cofired |
1 |
Yes |
2 V |
20 MHz |
1 |
CMOS |
14 |
0.018311 % |
2.5 V |
Binary, 2's Complement Binary |
2.5 V |
Small Outline, Heat Sink/Slug, Shrink Pitch |
SSOP48,.48 |
Analog to Digital Converters |
0.025 in (0.635 mm) |
125 °C (257 °F) |
0 mV |
Parallel, Word |
-55 °C (-67 °F) |
Sample |
Dual |
R-CDSO-G48 |
0.107 in (2.72 mm) |
0.38 in (9.65 mm) |
No |
0.62 in (15.75 mm) |
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|
STMicroelectronics |
Analog To Digital Converter, Proprietary Method |
Military |
Gull Wing |
48 |
HSSOP |
Rectangular |
300k Rad(Si) |
Plastic/Epoxy |
1 |
Yes |
2 V |
50 MHz |
1 |
CMOS |
12 |
2.5 V |
Binary, 2's Complement Binary |
2.5 V |
Small Outline, Heat Sink/Slug, Shrink Pitch |
SSOP48,.48 |
Analog to Digital Converters |
0.025 in (0.635 mm) |
125 °C (257 °F) |
0 mV |
Parallel, Word |
-55 °C (-67 °F) |
Sample |
Dual |
R-PDSO-G48 |
0.107 in (2.72 mm) |
0.38 in (9.652 mm) |
No |
40 s |
250 °C (482 °F) |
0.613 in (15.57 mm) |
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NXP Semiconductors |
Analog To Digital Converter, Resistance Ladder |
Military |
Through-Hole |
18 |
DIP |
Rectangular |
Ceramic, Metal-Sealed Cofired |
1 |
No |
6.25 MHz |
1 |
Bipolar |
8 |
0.293 % |
Binary |
-5.2 V |
In-Line |
0.1 in (2.54 mm) |
125 °C (257 °F) |
Parallel, 8 Bits |
-55 °C (-67 °F) |
Dual |
R-CDIP-T18 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
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NXP Semiconductors |
Analog To Digital Converter, Flash Method |
Military |
Through-Hole |
20 |
WDIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
5.1 V |
1 |
CMOS |
8 |
15 mA |
0.39 % |
5 V |
Offset Binary |
In-Line, Window |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-100 mV |
Parallel, 8 Bits |
-55 °C (-67 °F) |
Dual |
2.5 µs |
R-GDIP-T20 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
0.957 in (24.305 mm) |
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NXP Semiconductors |
Analog To Digital Converter, Flash Method |
Military |
Through-Hole |
20 |
WDIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
5.1 V |
1 |
CMOS |
8 |
15 mA |
0.195 % |
5 V |
Offset Binary |
In-Line, Window |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-100 mV |
Parallel, 8 Bits |
-55 °C (-67 °F) |
Dual |
2.5 µs |
R-GDIP-T20 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
0.957 in (24.305 mm) |
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NXP Semiconductors |
Analog To Digital Converter, Resistance Ladder |
Military |
Through-Hole |
18 |
DIP |
Rectangular |
Ceramic, Metal-Sealed Cofired |
1 |
No |
6.25 MHz |
1 |
Bipolar |
8 |
0.293 % |
Binary |
-5.2 V |
In-Line |
0.1 in (2.54 mm) |
125 °C (257 °F) |
Parallel, 8 Bits |
-55 °C (-67 °F) |
Dual |
R-CDIP-T18 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
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Maxim Integrated |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
24 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
5 V |
1 |
BICMOS |
12 |
0.024 % |
5 V |
Binary, Offset Binary |
5,-12/-15 V |
-12 V |
In-Line |
DIP24,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-5 V |
Parallel, Word |
-55 °C (-67 °F) |
Tin Lead |
Dual |
5.2 µs |
R-GDIP-T24 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
245 °C (473 °F) |
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Maxim Integrated |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
18 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
10 V |
1 |
CMOS |
8 |
0.2 % |
5 V |
Binary, Offset Binary, Complementary Offset Binary |
5 V |
In-Line |
DIP18,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-10 V |
Parallel, 8 Bits |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-GDIP-T18 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
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Maxim Integrated |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
28 |
DIP |
Rectangular |
Ceramic, Metal-Sealed Cofired |
1 |
No |
10 V |
1 |
BICMOS |
12 |
0.0244 % |
15 V |
Binary, Offset Binary |
5,±12/±15 V |
-15 V |
In-Line |
DIP28,.6 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-10 V |
Parallel, Word |
-55 °C (-67 °F) |
Tin Lead |
Sample |
Dual |
15 µs |
R-CDIP-T28 |
1 |
0.232 in (5.89 mm) |
0.6 in (15.24 mm) |
No |
e0 |
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|
Maxim Integrated |
Analog To Digital Converter, Successive Approximation |
Military |
Through-Hole |
20 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
8 |
No |
1.25 V |
133 kHz |
1 |
10 |
0.0488 % |
3 V |
Binary, 2's Complement Binary |
In-Line |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-1.25 V |
Serial |
-55 °C (-67 °F) |
Track |
Dual |
65 µs |
R-GDIP-T20 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
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Maxim Integrated |
Analog To Digital Converter, Flash Method |
Military |
Through-Hole |
20 |
DIP |
Rectangular |
Ceramic, Glass-Sealed |
1 |
No |
4.9 V |
1 |
CMOS |
8 |
15 mA |
5 V |
Binary |
5 V |
In-Line |
DIP20,.3 |
Analog to Digital Converters |
0.1 in (2.54 mm) |
125 °C (257 °F) |
-100 mV |
Parallel, 8 Bits |
-55 °C (-67 °F) |
Tin Lead |
Track |
Dual |
2.5 µs |
R-GDIP-T20 |
1 |
0.2 in (5.08 mm) |
0.3 in (7.62 mm) |
No |
e0 |
Analog-to-digital converters (ADCs) are electronic devices that convert continuous analog signals into digital signals, which can be processed by digital circuits, microcontrollers, or computers. ADCs are essential components in many electronic systems, as they allow the measurement and processing of physical signals, such as temperature, pressure, light, and sound.
ADCs work by sampling the analog signal at regular intervals and quantizing the sampled signal into a series of digital values. The sampling rate and the resolution of the ADC determine the accuracy and the bandwidth of the digital signal. ADCs may also include features such as amplification, filtering, or signal conditioning, to improve the accuracy and stability of the digital signal.
ADCs can be classified based on their architecture and their application. The most common types of ADCs are successive approximation ADCs, delta-sigma ADCs, and pipeline ADCs. Each type has its advantages and limitations, depending on the application and the required performance.
ADCs are used in a wide range of applications, from consumer electronics, such as smartphones and digital cameras, to industrial automation, medical devices, and scientific instruments. They play a crucial role in the conversion of physical signals into digital signals, allowing the processing, storage, and transmission of data in electronic systems.
Overall, ADCs are essential components in many electronic systems, providing the necessary signal conversion for a wide range of applications. Their accuracy, speed, and resolution determine the performance and the functionality of many electronic devices and systems.