YES Varactor Diodes 2,284

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
1SV280(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE				YES					ABRUPT					SMALL OUTLINE	Varactors	15 V
BB148	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		39.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			30 V	e3			SILICON	14.5
BBY53-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	6 V			MATTE TIN	R-PDSO-G2	1		Not Qualified		5.3 pF				6 V	e3		260	SILICON	1.8
MGV125-08	M/a-com Technology Solutions	VARIABLE CAPACITANCE DIODE	UPPER	NO LEAD	1	YES	SQUARE	4000	UNSPECIFIED	SINGLE	HYPERABRUPT	KA BAND		1		UNCASED CHIP						S-XUUC-N1			Not Qualified	.25 W	.3 pF			16.66 %	22 V		NOT SPECIFIED	NOT SPECIFIED	GALLIUM ARSENIDE
SMV1213-004LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	12 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-G3	1		Not Qualified	.25 W	22 pF	LOW NOISE			12 V	e3	40	260	SILICON	2
SMV1232-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	15 V	175 Cel	-55 Cel		R-PBCC-N2	1		Not Qualified	.75 W	2.6 pF	LOW NOISE		10 %	15 V			260	SILICON	1.5
BB149A,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		19.74 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		7.7 %	30 V	e3			SILICON	8.45
BB174X	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES											Varactors	30 V			TIN		1									e3	30	260
BB55502VH7912XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2					18.7 pF	LOW INDUCTANCE		6.67 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	6
SMV1231-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	1500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	1.575 pF	LOW NOISE		9.21 %	15 V	e3	40	260	SILICON	1.5
SMV2202-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND	.05 uA	1	17.6 V	CHIP CARRIER		22 V	175 Cel	-55 Cel		R-PBCC-N2				.75 W	1.36 pF			12.92 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
1SV285(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE				YES					ABRUPT					SMALL OUTLINE	Varactors	10 V									4.5 pF
SMV1405-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	3200	PLASTIC/EPOXY	SINGLE	ABRUPT	S BAND		1		SMALL OUTLINE	Varactors	30 V			MATTE TIN	R-PDSO-F2	1		Not Qualified	.25 W	2.1 pF	LOW NOISE			30 V	e3	40	260	SILICON	4.1
SMV2201-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND	.05 uA	1	17.6 V	CHIP CARRIER		22 V	175 Cel	-55 Cel		R-PBCC-N2				.75 W	.86 pF			14.62 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BB545E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1				20 pF	LOW INDUCTANCE		7.5 %		e3			SILICON	6.3
SMV1213-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	12 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	22 pF				12 V	e3	40	260	SILICON	2
SMV1236-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	700	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			TIN	R-PDSO-F2	1		Not Qualified	.25 W	17 pF	LOW NOISE		8.82 %	15 V	e3		260	SILICON	1.6
BBY40,235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1				29 pF		TO-236AB	10.34 %	30 V	e3	30	260	SILICON	5
SMV1248-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	700	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	17 pF				15 V	e3	40	260	SILICON	10.8
SMV1255-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	64 pF				15 V	e3	40	260	SILICON	11
SMV1265-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	1	26 V	CHIP CARRIER			125 Cel	-55 Cel		R-PBCC-N2				.25 W	13.8 pF			8.09 %	28 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	17.7
SMV2020-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	22 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	1.37 pF	LOW NOISE		12.09 %	22 V	e3	40	260	SILICON	2.8
SMV2023-011LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	22 V			Matte Tin (Sn)	R-PDSO-G2	1		Not Qualified	.25 W	4.9 pF	LOW NOISE		10.2 %	22 V	e3	40	260	SILICON	4.2
1SV228	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE	Varactors	15 V	125 Cel			R-PDSO-G3			Not Qualified		30.5 pF	CAPACITANCE MATCHED TO 2.5%		6.55 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.1
1SV313	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	125 Cel		TIN LEAD	R-PDSO-G2			Not Qualified		7.85 pF			7.01 %		e0			SILICON	2.4
BB201,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified		95 pF		TO-236AB	6.81 %		e3	30	260	SILICON	3.1
SMV1234-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	1000	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			TIN	R-PDSO-F2	1		Not Qualified	.25 W	6.5 pF	LOW NOISE		10 %	15 V	e3		260	SILICON	1.6
SMV1235-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	750	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	11.5 pF	LOW NOISE		10 %	15 V	e3	40	260	SILICON	1.6
SMV1249-011LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	600	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-G2	1		Not Qualified	.25 W	31 pF				15 V	e3	40	260	SILICON	11
SMV1265-011	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors				TIN LEAD	R-PDSO-G2	1		Not Qualified	.25 W	13.8 pF			8.09 %	28 V	e0		220	SILICON	17.7
SMV1413-004LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	2400	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	S BAND		2		SMALL OUTLINE	Varactors	30 V			Tin (Sn)	R-PDSO-G3	1		Not Qualified	.25 W	7.4 pF	LOW NOISE			30 V	e3	40	260	SILICON	4.2
SMV1430-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	3500	PLASTIC/EPOXY	SINGLE	ABRUPT	S BAND		1		SMALL OUTLINE					MATTE TIN	R-PDSO-F2	1		Not Qualified	.25 W	1.01 pF	LOW NOISE			30 V	e3		260	SILICON	3.8
SMV1763-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors				Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	6.7 pF	LOW NOISE		7.46 %	10 V	e3	40	260	SILICON	2.3
SMV2205-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND	.05 uA	1	17.6 V	CHIP CARRIER		22 V	175 Cel	-55 Cel		R-PBCC-N2				.75 W	4.86 pF			10.81 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
1SV204	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-F2			Not Qualified						30 V				SILICON	2.5
1SV228(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE			125 Cel			R-PDSO-G3					30.5 pF			6.56 %	15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.1
1SV229(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel			R-PDSO-G2					15 pF			6.67 %	15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
1SV262	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.01 uA	1	32 V	SMALL OUTLINE	Varactors	36 V	125 Cel			R-PDSO-G2			Not Qualified		35.5 pF	2% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR		7.04 %	34 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	12
1SV280,H3F	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY	.003 uA	1	15 V	SMALL OUTLINE		15 V	125 Cel			R-PDSO-F2					4.25 pF			10.59 %	15 V				SILICON	2
1SV285	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.003 uA	1	10 V	SMALL OUTLINE	Varactors	10 V	125 Cel			R-PDSO-F2			Not Qualified		4.45 pF			10.11 %	10 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
MV7005T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN LEAD	R-PDSO-G4		CATHODE	Not Qualified	.8 W			TO-261AA	13.04 %	15 V	e0			SILICON	12
SMV1212-001	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	12 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.25 W	50 pF	LOW NOISE			12 V	e0	30	245	SILICON	2
SMV1215-001LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	12 V			Matte Tin (Sn)	R-PDSO-G3	1		Not Qualified	.25 W	9.5 pF				12 V	e3	40	260	SILICON	2
SMV1232-079	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	1400	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			Tin/Lead (Sn/Pb)	R-PDSO-F2	1		Not Qualified	.25 W	1.5 pF	LOW NOISE			15 V	e0	30	245	SILICON	1.5
SMV1234-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	15 V	175 Cel	-55 Cel		R-XBCC-N2	1			.75 W	6.5 pF			12.07 %	15 V			260	SILICON	1.6
SMV1237-001LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			Tin (Sn)	R-PDSO-G3	1		Not Qualified	.25 W	49.5 pF	LOW NOISE		9.09 %	15 V	e3	40	260	SILICON	1.6
SMV1255-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	CHIP CARRIER		15 V	125 Cel	-55 Cel		R-PBCC-N2	1			.25 W	64 pF				15 V			260	SILICON	11
SMV1270-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	23.6 pF	LOW NOISE		6.36 %	20 V	e3	40	260	SILICON	2.3

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.