FLASH MODULE Flash Memory 1,096

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
WDS400T2B0A	Western Digital	FLASH MODULE	COMMERCIAL		SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				4398046511104 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	4TX8	4T	0 Cel				SINGLE		R-XSMA-N		7 mm			69.85 mm		35184372088832 bit						NAND TYPE		100.2 mm
SQF-SMSM4-256G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				274877906944 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	256GX8	256G	0 Cel				SINGLE		R-XSMA-N52		4.2 mm			30 mm		2199023255552 bit						MLC NAND TYPE		50.8 mm
SQF-SMSM4-128G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				137438953472 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	128GX8	128G	0 Cel				SINGLE		R-XSMA-N52		4.2 mm			30 mm		1099511627776 bit						MLC NAND TYPE		50.8 mm
TS64GMTS800	Transcend Information	FLASH MODULE
WDS500G3XHC	Western Digital	FLASH MODULE	COMMERCIAL		SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD					536870912000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	500GX8	500G	0 Cel				SINGLE		R-XSMA-N		8.1 mm	300 Write/Erase Cycles		24.2 mm		4294967296000 bit						NAND TYPE		80 mm
SQF-SMSM4-512G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				549755813888 words				8	MICROELECTRONIC ASSEMBLY					85 Cel	512GX8	512G	-40 Cel				SINGLE		R-XSMA-N52		4.2 mm			30 mm		4398046511104 bit						MLC NAND TYPE		50.8 mm
MTFDHBK1T0TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			1099511627776 words				8	MICROELECTRONIC ASSEMBLY					95 Cel	1TX8	1T	-40 Cel				SINGLE		R-XSMA-N							8796093022208 bit						TLC NAND TYPE
MTFDHBL128TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			137438953472 words				8						95 Cel	128GX8	128G	-40 Cel				BOTTOM		R-XBGA-B							1099511627776 bit						TLC NAND TYPE
WDS500G3X0C	Western Digital	FLASH MODULE	COMMERCIAL		SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD					536870912000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	500GX8	500G	0 Cel				SINGLE		R-XSMA-N		2.38 mm	300 Write/Erase Cycles		22 mm		4294967296000 bit						NAND TYPE		80 mm
ST16000NE000	Seagate Microelectronics	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD					17592186044416 words	5			8	MICROELECTRONIC ASSEMBLY					60 Cel	16TX8	16T	5 Cel				UNSPECIFIED		R-XXMA-N		26.11 mm			101.85 mm		140737488355328 bit		ALSO OPERATES AT 12V NOMINAL SUPPLY				NOR TYPE		146.99 mm		5
SQF-SMSM2-64G-SBC	Advantech	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				68719476736 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	64GX8	64G	0 Cel				SINGLE		R-XSMA-N52		4.2 mm			30 mm		549755813888 bit						MLC NAND TYPE		50.8 mm
TS64GMTS800I	Transcend Information	FLASH MODULE	INDUSTRIAL	75		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL		512		68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY			1		85 Cel	64GX8	64G	-40 Cel				SINGLE		R-XSMA-N75	3.465 V				22 mm		549755813888 bit	3.135 V					NAND TYPE		80 mm		3.3
TS64GMTS800S	Transcend Information	FLASH MODULE
SQF-SHMU2-128G-SBE	Advantech	FLASH MODULE			DMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY			10	.8 mm	85 Cel	128GX8	128G	-40 Cel				DUAL		R-XDMA-N52			30000 Write/Erase Cycles				1099511627776 bit						MLC NAND TYPE				3.3
TS512GMTE470A	Transcend Information	FLASH MODULE			SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD					137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					75 Cel	512GX8	512G	-20 Cel				SINGLE	HARDWARE	R-XSMA-N	3.465 V	42.15 mm			3.58 mm		4398046511104 bit	3.135 V	WD-MAX				NAND TYPE		22 mm		3.3
MTFDHBM1T0TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1099511627776 words				8						105 Cel	1TX8	1T	-40 Cel				BOTTOM		R-XBGA-B							8796093022208 bit						TLC NAND TYPE
MTFDKCC960TFR-1BC1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					1030792151040 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	960GX8	960G	0 Cel				UNSPECIFIED		R-XXMA-X							8246337208320 bit						TLC NAND TYPE
MZ-V7S2T0BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD					2000000000000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	2TX8	2T	0 Cel				SINGLE		R-XSMA-N							16000000000000 bit						MLC NAND TYPE
SFU32048E1AE1TO-I-QT-1A1-STD	Swissbit Ag	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS		208 mA	2147483648 words	5			8				10		85 Cel	2GX8	2G	-40 Cel				UNSPECIFIED		R-XXMA-X	5.5 V	8.3 mm			18 mm		17179869184 bit	4.5 V					SLC NAND TYPE		67.8 mm		5
SQF-SMSM2-64G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				68719476736 words				8	MICROELECTRONIC ASSEMBLY					85 Cel	64GX8	64G	-40 Cel				SINGLE		R-XSMA-N52		4.2 mm			30 mm		549755813888 bit						MLC NAND TYPE		50.8 mm
SQF-SMSM4-256G-SBE	Advantech	FLASH MODULE	INDUSTRIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL				274877906944 words				8	MICROELECTRONIC ASSEMBLY					85 Cel	256GX8	256G	-40 Cel				SINGLE		R-XSMA-N52		4.2 mm			30 mm		2199023255552 bit						MLC NAND TYPE		50.8 mm
STKC4000403	Seagate Microelectronics	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					4398046511104 words				8	MICROELECTRONIC ASSEMBLY						4TX8	4T					UNSPECIFIED		R-XXMA-X		20.9 mm			80 mm		35184372088832 bit						NOR TYPE		115.3 mm
ACT-F512K8N-070P4Q	Cobham Plc	FLASH MODULE	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	Flash Memories		2.54 mm	125 Cel	512KX8	512K	-55 Cel	8	YES		DUAL		R-CDMA-T32	5.5 V		100000 Write/Erase Cycles			Not Qualified	4194304 bit	4.5 V	100K ERASE/PROGRAM CYCLES				NOR TYPE	.0016 Amp		70 ns	5	YES
MTFDHBL256TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			274877906944 words				8						95 Cel	256GX8	256G	-40 Cel				BOTTOM		R-XBGA-B							2199023255552 bit						TLC NAND TYPE
MTFDHBL512TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			549755813888 words				8						105 Cel	512GX8	512G	-40 Cel				BOTTOM		R-XBGA-B							4398046511104 bit						TLC NAND TYPE
MTFDHBM1T0TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1099511627776 words				8						95 Cel	1TX8	1T	-40 Cel				BOTTOM		R-XBGA-B							8796093022208 bit						TLC NAND TYPE
SQF-CM8V4-240G-ECE	Advantech	FLASH MODULE		75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			257698037760 words	3.3			8	MICROELECTRONIC ASSEMBLY					85 Cel	240GX8	240G	-40 Cel				SINGLE		R-XSMA-N75		7.3 mm	3000 Write/Erase Cycles	200 MHz	22 mm		2061584302080 bit						TLC NAND TYPE		80 mm		3.3
TS2GSDC220I	Transcend Information	FLASH MODULE
MTFDHBK512TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			549755813888 words				8	MICROELECTRONIC ASSEMBLY					95 Cel	512GX8	512G	-40 Cel				SINGLE		R-XSMA-N							4398046511104 bit						TLC NAND TYPE
MTFDHBL256TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			274877906944 words				8						105 Cel	256GX8	256G	-40 Cel				BOTTOM		R-XBGA-B							2199023255552 bit						TLC NAND TYPE
KBG30ZMS256G	Toshiba	FLASH MODULE			SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					80 Cel	256GX8	256G	0 Cel				SINGLE		R-XSMA-N							2199023255552 bit										3.3
MTFDDAV480TDS-1AW1ZABYY	Micron Technology	FLASH MODULE		75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel	480GX8	480G	0 Cel				SINGLE		R-XSMA-N75	3.46 V	3.28 mm			22 mm		4123168604160 bit	3.14 V					TLC NAND TYPE		80 mm		3.3
MZ-V8V500BW	Samsung	FLASH MODULE
MTFDHBK256TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			274877906944 words				8	MICROELECTRONIC ASSEMBLY					95 Cel	256GX8	256G	-40 Cel				SINGLE		R-XSMA-N							2199023255552 bit						TLC NAND TYPE
MTFDHBL512TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			549755813888 words				8						95 Cel	512GX8	512G	-40 Cel			TIN SILVER COPPER	BOTTOM		R-XBGA-B							4398046511104 bit			e1	30	260	TLC NAND TYPE
MTFDHBL064TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			68719476736 words				8						105 Cel	64GX8	64G	-40 Cel				BOTTOM		R-XBGA-B							549755813888 bit						TLC NAND TYPE
MTFDHBL128TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			137438953472 words				8						105 Cel	128GX8	128G	-40 Cel				BOTTOM		R-XBGA-B							1099511627776 bit						TLC NAND TYPE
MZ7L33T8HBLT-00A07	Samsung	FLASH MODULE		22	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			4222124650659 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3.84TX8	3.84T	0 Cel				UNSPECIFIED		R-XXMA-N22	5.25 V	7 mm			69.85 mm		33776997205278 bit	4.75 V					MLC NAND TYPE		100.2 mm		5
MTFDDAK240MBD-2AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel	240GX8	240G	-40 Cel				SINGLE		R-XSMA-N22	5.5 V	7.2 mm			69.85 mm		2061584302080 bit	4.5 V					MLC NAND TYPE		100.45 mm		5
MZ-77E2T0B/EU	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS			2199023255552 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	2TX8	2T	0 Cel				UNSPECIFIED		R-XXMA-X		6.8 mm			69.85 mm		17592186044416 bit						NAND TYPE		100 mm
MZ-77E500B/EU	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS			536870912000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	500GX8	500G	0 Cel				UNSPECIFIED		R-XXMA-X		6.8 mm			69.85 mm		4294967296000 bit						NAND TYPE		100 mm
MZ7L3960HCJR-00A07	Samsung	FLASH MODULE		22	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	960GX8	960G	0 Cel				UNSPECIFIED		R-XXMA-N22	5.25 V	7 mm			69.85 mm		8246337208320 bit	4.75 V					MLC NAND TYPE		100.2 mm		5
MTFDHBE7T6TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			8444249301319 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	7.68TX8	7.68T	0 Cel				UNSPECIFIED		R-XXMA-N							67553994410557 bit						TLC NAND TYPE
MZ-77E1T0B/EU	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS			1099511627776 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	1TX8	1T	0 Cel				UNSPECIFIED		R-XXMA-X		6.8 mm			69.85 mm		8796093022208 bit						NAND TYPE		100 mm
MZ-77Q1T0BW	Samsung	FLASH MODULE
MZ-V7S500BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD					500000000000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	500GX8	500G	0 Cel				SINGLE		R-XSMA-N							4000000000000 bit						MLC NAND TYPE
MZ7L3480HCHQ-00A07	Samsung	FLASH MODULE		22	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	480GX8	480G	0 Cel				UNSPECIFIED		R-XXMA-N22	5.25 V	7 mm			69.85 mm		4123168604160 bit	4.75 V					MLC NAND TYPE		100.2 mm		5
MZ7LH1T9HMLT-00005	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	SYNCHRONOUS			2061584302080 words	5			8	MICROELECTRONIC ASSEMBLY			0.25		70 Cel	1920GX8	1920G	0 Cel				UNSPECIFIED		R-XXMA-X	5.25 V	7 mm			69.85 mm		16492674416640 bit	4.75 V					NAND TYPE		100.2 mm		5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.