INDUSTRIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AT45DB161D-MU-2.5	Atmel	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	2.7		2.7/3.3	1	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.5 V	ORGANIZED AS 4096 PAGES OF 528 BYTES EACH		e3	40	260	NOR TYPE	.000025 Amp	6 mm			2.7
AT45DB321D-TU	Atmel	FLASH	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		Flash Memories	20	.55 mm	85 Cel		32MX1	32M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G28	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	8 mm	Not Qualified		SPI		33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH		e3	40	260	NOR TYPE	.00001 Amp	11.8 mm			2.7
FEMC004GTTG7-T24-16	Flexxon Global	FLASH CARD	INDUSTRIAL	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL					4294967296 words	3.3			8							85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B153											34359738368 bit							MLC NAND TYPE
GLS29EE010-70-4I-NHE	Greenliant Systems	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					1.27 mm	85 Cel		128KX8	128K	-40 Cel					QUAD			R-PQCC-J32	3	5.5 V	3.556 mm			11.43 mm		10 ms			1048576 bit	4.5 V				10	260			13.97 mm		70 ns	5
IS25LP128F-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		16MX8	16M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		166 MHz	5 mm					134217728 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			6 mm			3
IS25LQ032B-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		32MX1	32M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm					33554432 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			2.7
IS25WP256D-JLLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		30 mA	33554432 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.85 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.65 V			e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	8 mm			1.8
K9F5608U0D-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	25 mA	33554432 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	1						Not Qualified				268435456 bit			512	e3				.00005 Amp			30 ns		NO
M25P10-AVMN6TPYA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		50 MHz	3.9 mm					1048576 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		4.9 mm			2.7
M25P80-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm			2.7
M25P80-VMW6TGBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words			3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified		SPI		8388608 bit	2.7 V	LG-MAX			30	260	NOR TYPE	.00001 Amp	6.05 mm			2.7
M29W320EB70ZE6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M58LW064D110N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00004 Amp	18.4 mm	YES	110 ns	3	NO
MT25QU128ABA8ESF-0SITTR	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	10.3 mm			1.8
MT25QU256ABA8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel					BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V				30	260			8 mm			1.8
MT28EW128ABA1LJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm					134217728 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		70 ns	3
MT35XU02GCBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC4GLMDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM			R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm					34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm
MX25L1606EZNI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	86 MHz	5 mm	Not Qualified		SPI		16777216 bit	2.7 V			e3			NOR TYPE	.00002 Amp	6 mm			3
MX25L6433FMI-08Q	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP16,.4	2		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm			SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.3 mm			3.3
MX25R1635FZNIH0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	1.8			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm					16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1			NOT SPECIFIED	NOT SPECIFIED			6 mm			3
MX25U25645GXDI00	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE		4			1 mm	85 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.65 V	IT CAN ALSO BE CONFIGURED AS 128M X 2 AND 256M X 1		e1					8 mm			1.8
MX25U6432FZBI02	Macronix	FLASH	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.12,32	2		20	.8 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		2 V	.6 mm		133 MHz	3 mm					67108864 bit	1.65 V	64MX1BIT					NOR TYPE	.000005 Amp	4 mm			1.8
MX25V1635FZNI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		80 MHz	5 mm					16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 16M X 1 BIT			NOT SPECIFIED	NOT SPECIFIED			6 mm			3
MX29F800CBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00005 Amp	18.4 mm		70 ns	5	YES
N25Q128A11ESE40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	1.8		1.8	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		134217728 bit	1.7 V			e3	30	260	NOR TYPE	.00001 Amp	5.285 mm			3
N25Q256A13EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE			30	260	NOR TYPE	.0001 Amp	8 mm			3
PF48F4400P0VBQEE	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM			R-PBGA-B88							Not Qualified			BOTTOM/TOP	536870912 bit							NOR TYPE	.00042 Amp		YES	100 ns		NO
PF48F4400P0VBQEF	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B88							Not Qualified			BOTTOM/TOP	536870912 bit				e1			NOR TYPE	.00042 Amp		YES	100 ns	1.8	NO
PF48F4400P0VBQEK	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM			R-PBGA-B88							Not Qualified			BOTTOM/TOP	536870912 bit				e1			NOR TYPE	.00042 Amp		YES	100 ns	1.8	NO
RPSEMC16DA1	Panasonic	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		ASYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B153	3	3.6 V	1.4 mm			11.5 mm					137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			2.7
S25FL032P0XMFI013	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		38 mA	4096 words	3		3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4KX16	4K	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified		SPI		65536 bit	2.7 V			e3			NOR TYPE	.00001 Amp	5.283 mm			3
S25FL116K0XMFI041	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words	3		3/3.3	4	SMALL OUTLINE	SOP8,.25	2	Flash Memories	20	1.27 mm	85 Cel		4MX4	4M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1		e3			NOR TYPE	.000005 Amp	4.9 mm			3
S25FL256LAGNFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	8 mm			3
S25FL256LAGNFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	8 mm			3
S25FL512SAGMFVG10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
S29AL016J70BFI012	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29AL016J70BFI013	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29AL016J70BFI023	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29GL064S70TFI073	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			14 mm					67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
S34ML04G100TFI003	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				4294967296 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S70FS01GSDSBHV210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		256MX4	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT ALSO HAS X1 MEMORY WIDTH		e1					8 mm			1.8
SFCF0128H1BK1MT-I-MS-553-SMA	Swissbit Ag	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS			134217728 words	3.3			8	UNCASED CHIP						85 Cel		128MX8	128M	-40 Cel					UPPER			R-XUUC-N50		3.63 V	4.1 mm			36.4 mm					1073741824 bit	2.97 V	ALSO OPERATES AT 5V			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		42.8 mm		300 ns	3.3
SST25PF040CT-40V/NP	Microchip Technology	FLASH	INDUSTRIAL		HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	40 MHz	2 mm			SPI		4194304 bit	2.3 V			e3			NOR TYPE	.00001 Amp	3 mm			3.3
SST25VF040B-50-4I-QAF-T	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	1	SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V			e4			NOR TYPE	.00003 Amp	6 mm
SST25WF020A-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	1.8			1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI		2097152 bit	1.65 V			e3			NOR TYPE	.00001 Amp	4.9 mm			1.8
SST26VF016B-104V/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V						NOR TYPE	.000045 Amp	4.9 mm			3
SST26WF040B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words	1.8			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		4194304 bit	1.65 V			e3			NOR TYPE	.000005 Amp	4.9 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.