Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F800FT55M6F	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44					Not Qualified		TOP	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK480MAV-1AE12AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
MTFDDAA050MAR-1J12AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
RC28F320C3BA100	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	100 ns	3	NO
MTFDDAK240MAV-1AE1ZAA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
MTFDDAK960MAV-2AE11ZZYY	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29F400FT5AM6F2	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm	12.6 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
MTFDDAK480MAV-1AH12ZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
PH28F320W30TD85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B56					Not Qualified		TOP	33554432 bit			4				NOR TYPE	.00005 Amp		YES	85 ns		NO
MTFDDAA128MAM-1J1AA2	Micron Technology	FLASH								CMOS																																								NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
MTFDDAA200MAR-1J11AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAK1T9TDD-1AT1ZAB	Micron Technology	FLASH MODULE
MTFDDAK400MAR-1J1AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
MTFDDAA256MAM-1K12AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAK480MBP-1AN1ZAB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W256GL70N3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm			BOTTOM/TOP	268435456 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
RD48F5000M0YFC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	256	NO			BOTTOM	R-PBGA-B107					Not Qualified		BOTTOM	536870912 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GH7ANB3E	Micron Technology	FLASH																																																							3
M29DW256G70ZS1F	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified		BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	70 ns	3	YES
M29W320FT80ZASF	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified		TOP	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAK960MAV-1AH1ZAA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W640GL90NB3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
MTFDDAK480MAV-1AE1ZAC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W800FB7AZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDDAT120MAV-1AE12ZZ	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		120GX8	120G	0 Cel					SINGLE	R-XSMA-N52		3.46 V	3.75 mm	29.85 mm				1030792151040 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAA200MAR-1K11AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAA200MAR-1K1	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29W640GT7AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm	Not Qualified		TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29F800FB55M6T	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44					Not Qualified		BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W400FB55N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES
MTFDJAA400MBS-1AN1ZABYY	Micron Technology	FLASH																																																NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
M29W800FT70ZA6ST	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			TOP	8388608 bit	3 V	TOP BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
RD48F3000P0ZBQE	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm			BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		10 mm		65 ns	1.8
M29W640GT6AZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm			TOP	67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29W128GL70ZA3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29F800FB5AM6T	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44					Not Qualified		BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W160EB80ZS3ST	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified		BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAA512MAM-1K2AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAK240MAV-1AH12AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W400FT70N6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48					Not Qualified		TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAA100MAR-1K12AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29W800FB70ZA6T	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48	1	3.6 V	1.2 mm	6 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAT064MAY-1AH12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		64GX8	64G	0 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm	29.85 mm				549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W256GH7AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified	.00007 ms	BOTTOM/TOP	268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAK960MAV-1AH11AAYY	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
MTFDDAK960MAV-1AE11ZZYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N22			7 mm	69.85 mm											MLC NAND TYPE		100.5 mm			3.3
MTFDDAV120MAV-1AE11AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W640GT6ANB6F	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm			TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.