Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MQCF004A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					4194304 words	3.3			8	MICROELECTRONIC ASSEMBLY					60 Cel		4MX8	4M	0 Cel					UNSPECIFIED	X-XXMA-X50	3.6 V			Not Qualified		33554432 bit	3 V	CAN ALSO BE OPERATED FROM 4.5 TO 5.5 VOLTS					NOR TYPE					3
MTFDDAA512MAM-1J22AC	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
RD48F4000P0XBQ0A	Micron Technology	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM	R-PBGA-B80	3.6 V	1 mm	8 mm	Not Qualified	BOTTOM	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		30	235	NOR TYPE	.000195 Amp	11 mm	YES	85 ns	3	NO
M29W064FT7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
MTFDDAK240MAV-1AH11AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
M29W256GL60N6F	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
MTFDDAK240MAV-1AE1ZAB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDJAL3T2MBS-2AN16ABY	Micron Technology	FLASH																																																					3.3
MTFDDAK256MAZ-1AE12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm			2199023255552 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W256GH70ZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W160ET70ZS6	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAT128MAY-1AH12ZYY	Micron Technology	FLASH MODULE	INDUSTRIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					85 Cel	3-STATE	128GX8	128G	-40 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm			1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
PH28F128W30TD70	Micron Technology	FLASH	INDUSTRIAL	60	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	8388608 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA60,9X10,30		Flash Memories	.75 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES			BOTTOM	R-PBGA-B60				Not Qualified	TOP	134217728 bit			4				NOR TYPE	.00007 Amp		YES	70 ns		NO
MTFDDAT240MAV-1AE11ABYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N52		3.7 mm	29.85 mm										MLC NAND TYPE		50.8 mm			3.3
M29W400DB45N3E	Micron Technology	FLASH																																																					3
RC48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
MTFDDAT256MAZ-1AE12ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm			2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W640GL6AZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm			67108864 bit	2.7 V						NOR TYPE		8 mm		60 ns	3
M29W800FB7AN6ST	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
M29F800FB5AN6F2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W640GL7AZF3F	Micron Technology	FLASH																																																					3
M29W128GL70N3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	14 mm	Not Qualified		131072 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAA512MAM-1J11AC	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAA200MAR-1J1AC	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAK128MAZ-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm			1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAT256MAM-1J12AC	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAK960MAV-1AE11ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	960GX8	960G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W400DB55N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V			e3			NOR TYPE	.0001 Amp	18.4 mm		55 ns	3	YES
M29W640GL60NA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		60 ns	3
RD48F3000P0XBQ0	Micron Technology	FLASH	INDUSTRIAL	80	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B80	3.6 V	1.2 mm	8 mm	Not Qualified	BOTTOM	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000155 Amp	10 mm	YES	85 ns	3	NO
M29W320EB70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W800FT90ZA6T	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	8388608 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
M29W160EB70ZS6T	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm		BOTTOM	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAV120MAV-1AE11ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W160FT80NSF	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48				Not Qualified	TOP	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAT256MAR-1J1AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W640GL90ZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		90 ns	3
MTFDDAK240MAV-2AE11AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAK960MAV-1AH11ABYY	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAV480MAV-1AE11AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W400FT70N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48				Not Qualified	TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W640GL60NA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		60 ns	3
MTFDDAA128MAM-1K2	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W800FB7AN6SF	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
M29W800FB55N6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48				Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
MTFDDAT512MAY-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm			4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAA128MAM-1J22AC	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAK240MAV-1AE12AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.