Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RD48F3000L0ZTQ0	Micron Technology	FLASH	OTHER	80	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	51 mA	8388608 words	1.8	NO	1.8,2.5/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN LEAD		BOTTOM		R-PBGA-B80	2 V	1.2 mm			8 mm	Not Qualified			TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
MTFDCAE008SAF-1C3	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	8589934592 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		8GX8	8G	0 Cel					UNSPECIFIED		R-XXMA-X	5.25 V	9.7 mm			26.6 mm					68719476736 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
JS48F4400P0VB00	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56	2 V	1.2 mm			14 mm				BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		18.4 mm		95 ns	1.8
MTFDDAK480MAV-2AH11ZZYY	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					5
M29W320EB70ZS1	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				BOTTOM	33554432 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAT032MAM1J12AB	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDDAT256MAR-1J11AB	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDDAT256MAM1K11AA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29DW256G60ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	8,126	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	60 ns		YES
RC28F320C3TA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
MTFDDAT120MAV-1AE11AA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDJAL1T6MBS-2AN16FCYY	Micron Technology	FLASH																																																						SLC NAND TYPE					3.3
MTFDDAK064MBD-1AH12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		64GX8	64G	-40 Cel					SINGLE		R-XSMA-N22	5.5 V	7.2 mm			69.85 mm					549755813888 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W256GL60N1E	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified			BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
M29W256GL60ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29W128GH60N3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified				131072 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
M29W128GSL70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified				134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29F200FT5AM6F	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44						Not Qualified			TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29DW128F6AZA6	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
MTFDDAT128MAM1J112AB	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDHAK480MCH-1AN1ZABYY	Micron Technology	FLASH								CMOS																																																			12
MTFDDAT256MAZ-1AE12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		256GX8	256G	0 Cel					DUAL		R-XDMA-N52	3.46 V	3.75 mm			29.85 mm					2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAK960MAV-1AE11AAYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP															UPPER		R-XUUC-N22		7 mm			69.85 mm												MLC NAND TYPE		100.5 mm			3.3
M29W160EB70ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		70 ns	3
M29W640GH7AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified				67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W800FT7AZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm				TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
M29W800FT7AZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm				TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
M45PE10-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	131072 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	23 ms	SPI		1048576 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	4.9 mm			2.7
MTFDDAK128MAY-1AH1ZZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		128GX8	128G	0 Cel					SINGLE		R-XSMA-X22	5.5 V	7 mm			69.85 mm					1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W640GT7AZF3F	Micron Technology	FLASH																																																											3
MTFDDAK240MBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS			257698037760 words	5			8	FLANGE MOUNT						85 Cel		240GX8	240G	-40 Cel					UNSPECIFIED		R-XXFM-X22	5.5 V									2061584302080 bit	4.5 V						MLC NAND TYPE					5
M58WR064KB70ZQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B88						Not Qualified			BOTTOM	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W256GL7AZS1F	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
CT256M225	Micron Technology	FLASH CARD	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		256GX8	256G	0 Cel					SINGLE		R-XSMA-N22		9.5 mm			69.85 mm					2199023255552 bit									100.2 mm			5
RC28F640P30T85	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm				TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		88 ns	1.8
RC28F320J3F75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified				33554432 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
M29W064FT7AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8		20	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127			YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm				TOP	67108864 bit	2.7 V		4					.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAA400MAR-1J12AC	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDDAK960MAV-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	960GX8	960G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm					8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAA200MAR-1J11AB	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29F800FT5AM6F2	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G44	5.5 V	3 mm			12.6 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
MTFDHBG1T9TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			2111062325329 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		1.92TX8	1.92T	0 Cel					UNSPECIFIED		R-XXMA-N										16888498602639 bit							TLC NAND TYPE
MTFDJAK400MBW-2AN16ABYY	Micron Technology	FLASH																																																											3.3
RC28F320C3BA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
M29W400FB5AZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		256KX16	256K	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm				BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
MTFDDAK120MAV-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm					1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAA256MAM-1J2AA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDDAA128MAM-1K21AA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.