Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W800FT7AN3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
MTFDDAA256MAM-1K11AB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAT064MAM	Micron Technology	FLASH								CMOS																																										30	260	MLC NAND TYPE					3.3
M29W640GT60ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		60 ns	3
PH28F640W18TE60	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.75 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B56	1.95 V	1 mm			7.7 mm	Not Qualified		TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE		9 mm		60 ns	1.8
MTFDDAA400MAR-1J11AA	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
RC28F512M29EWH	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	2.7 V		16/32	e0			NOR TYPE	.000225 Amp	13 mm	YES	100 ns	3	YES
MTFDDAK128MAZ-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		128GX8	128G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm			69.85 mm				1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W640GL90ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm			11 mm				67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		90 ns	3
MTFDDAK032SBD-AAH12ITYYES	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				34359738368 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		32GX8	32G	-40 Cel					SINGLE	R-XSMA-X22	5.5 V	7.2 mm			69.85 mm				274877906944 bit	4.5 V	LENGTH_MAX					SLC NAND TYPE		100.45 mm			5
MTFDDAT480MAV-1AE11ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm			69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
RD48F2000P0XTQ0	Micron Technology	FLASH	INDUSTRIAL	80	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM	R-PBGA-B80	3.6 V	1.2 mm			8 mm	Not Qualified		TOP	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000035 Amp	10 mm	YES	85 ns	3	NO
MTFDDAT064MAR-1K1AC	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
RC28F640P33T85	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM	R-PBGA-B64	3.6 V	1.2 mm			8 mm	Not Qualified		TOP	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	10 mm	YES	85 ns	3	NO
MTFDDAK240MAV-2AH11ZZ	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
MTFDDAK120MAV-2AE11ABYY	Micron Technology	FLASH								CMOS																																										NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M58WR016KB7AZQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B88						Not Qualified		BOTTOM	16777216 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29F400FB55N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48						Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M45PE10S-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words				8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL	R-PDSO-G8	3.6 V	1.75 mm		75 MHz	3.9 mm		23 ms		1048576 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		4.9 mm			2.7
MTFDDAA200MAR-1J12AB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MT8F432M-9T	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			4194304 words				32	MICROELECTRONIC ASSEMBLY								4MX32	4M						SINGLE	R-XSMA-N80						Not Qualified			134217728 bit											90 ns	5
MTFDDAK960MAV-2AH11ACYY	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
M29F200FB5AM6S	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44						Not Qualified		BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT240MAV-1AE12AC	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDHBA400TDG-1AW42ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			429496729600 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		400GX8	400G	0 Cel					UNSPECIFIED	R-XXMA-N									3435973836800 bit							TLC NAND TYPE
M29W064FT70ZA6E	Micron Technology
MTFDCAE002SAF-1B1IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	2147483648 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		2GX8	2G	-40 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm			26.6 mm				17179869184 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29F200FT5AN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W800FB7AZA3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm			6 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
M29W640GL7ANA6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W400FT5AZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm			6 mm			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
MTFDDAT128MAM-1K2AB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAT120MAV-1AE11ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm			69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
PC48F4400P0VB0E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	2 V	1.2 mm		52 MHz	10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00042 Amp	13 mm	YES	100 ns	1.8	NO
MTFDCAE004SAF-1B1	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	4294967296 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		4GX8	4G	0 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm			26.6 mm				34359738368 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M58BW016FB7ZA3FT	Micron Technology	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	3			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80	3.6 V	1.6 mm			10 mm			BOTTOM	16777216 bit	2.7 V						NOR TYPE		12 mm		70 ns	3
MTFDDAT256MAR-1K12AB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
M29W256GH70ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified	.00007 ms	BOTTOM/TOP	268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAK960MAV-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	960GX8	960G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm			69.85 mm				8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W160EB70N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		1MX16	1M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm			12 mm			BOTTOM	16777216 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
RD48F4000M0YUC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-30 Cel	128	NO			BOTTOM	R-PBGA-B107						Not Qualified		TOP	268435456 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29DW256G7ANF1E	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	32K,128K	20 mA	16777216 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		20	.5 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm			BOTTOM/TOP	268435456 bit	2.7 V		8				NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAT064MAM1J1AA	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
M29W640GH90ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		90 ns	3
MTFDDAA128MAM-1K11AB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
PH28F160C3TD70B	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	1048576 words	3	NO		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30				.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1 mm			6.964 mm	Not Qualified		TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	7.286 mm	YES	70 ns	3	NO
M29W800FB7AZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm			6 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDHBE1T9TDF-1AW42ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			2111062325329 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		1.92TX8	1.92T	0 Cel					UNSPECIFIED	R-XXMA-N									16888498602639 bit							TLC NAND TYPE

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.