Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W640GT70NB3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	14 mm	Not Qualified	TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W640GL7AZS3E	Micron Technology	FLASH																																																						3
MTFDDAT128MAR-1J1AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M58WR032KT70ZQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B88				Not Qualified	TOP	33554432 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MTFDDAT256MAZ-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		256GX8	256G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm			2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W160EB70ZS6	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W400FB5AN6ST	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
RC28F256P30TFF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	TOP	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e0			NOR TYPE	.00021 Amp	13 mm	YES	17 ns	1.8	NO
M29W400DB45N3F	Micron Technology	FLASH																																																						3
MTFDCAE004SAF-1D2	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	4294967296 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		4GX8	4G	0 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm	26.6 mm			34359738368 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAA128MAM-1J21AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W064FB70ZA3F	Micron Technology
MTFDDAK240MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		240GX8	240G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7.2 mm	69.85 mm			2061584302080 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm			5
M58WT032KT70ZAQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B88				Not Qualified	TOP	33554432 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W800FB70ZA6SF	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDDAT480MAV-1AH1ZZZYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		480GX8	480G	0 Cel					SINGLE	R-XSMA-N52	3.46 V	3.75 mm	29.85 mm			4123168604160 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W160EB70ZA3ST	Micron Technology	FLASH																																																						3
MTFDDAK960MAV-1AE11AC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
MTFDCAE008SAF-1B3	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	8589934592 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		8GX8	8G	0 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm	26.6 mm			68719476736 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29W800FB7AZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDDAA400MAR-1K1AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W640GH7AZA3E	Micron Technology	FLASH																																																						3
MTFDDAT128MAR-1K12	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDHBA960TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			1030792151040 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					UNSPECIFIED	R-XXMA-N						8246337208320 bit							TLC NAND TYPE
MTFDDAA256MAM-1K21	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M58WR064HU7AZA6E	Micron Technology	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B80				Not Qualified	TOP	67108864 bit			4				NOR TYPE	.00001 Amp		YES	70 ns		NO
MTFDDAT128MAM1J11AA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W400FB5AN3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
MTFDHBE6T4TDG-1AW42ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			7036874417766 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		6.4TX8	6.4T	0 Cel					UNSPECIFIED	R-XXMA-N						56294995342131 bit							TLC NAND TYPE
M29W128GH70N1E	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel		8KX16	8K	0 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	14 mm	Not Qualified		131072 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAT128MAM1K11AA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
RD48F6000M0YCB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	512	NO			BOTTOM	R-PBGA-B105				Not Qualified	BOTTOM	1073741824 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
GE28F160C3TC70	Micron Technology	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B46	3.6 V			Not Qualified	TOP	16777216 bit	2.7 V						NOR TYPE	.00002 Amp		YES	70 ns	3	NO
M29W256GL7AZS1E	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm		BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29DW127G70NF6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W320FT7AN6E6	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W160FB7AZA6F6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAT128MAM1J11AC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
GE28F160B3BD70	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.75 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1 mm	6.964 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		7.286 mm		70 ns	2.7
RC28F160C3TA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
M29W800FB70N3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
RC28F00BM29EWL	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	31 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	2147483648 bit			16/32				NOR TYPE	.00048 Amp		YES	100 ns		YES
M29W400FT70ZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAT064MAM1J11AA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W064FB6AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8		20	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127			YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm		BOTTOM	67108864 bit	2.7 V		4					.0001 Amp	8 mm	YES	60 ns	3	YES
MTFDDAK960MAV-1AE12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	960GX8	960G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK120MAV-1AH12ZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			1030792151040 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.5 mm			5
M29F160FB55N32	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	12 mm	Not Qualified	BOTTOM	16777216 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.