Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
QB25F160S33B8	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			45 mA	2097152 words			3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16				100000 Write/Erase Cycles	68 MHz		Not Qualified	SPI	BOTTOM	16777216 bit							NOR TYPE	.00007 Amp
M29W640GT90ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			TOP	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		90 ns	3
M29W400FB55ZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm			6 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	8 mm	YES	55 ns	3	YES
MTFDHBE1T9TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			2111062325329 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		1.92TX8	1.92T	0 Cel					UNSPECIFIED		R-XXMA-N										16888498602639 bit							TLC NAND TYPE
M29W320DB7AZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAA256MAM-1J1AC	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
M29W160ET70ZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		70 ns	3
MTFDDAK240MAV-1AE11ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
RD48F3000L0YCQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM		R-PBGA-B88							Not Qualified		BOTTOM	134217728 bit							NOR TYPE	.00007 Amp		YES	85 ns		NO
M29W128GH70ZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDCAE001SAF-1D1	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	1073741824 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		1GX8	1G	0 Cel					UNSPECIFIED		R-XXMA-X		5.25 V	9.7 mm			26.6 mm				8589934592 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAT256MAR-1J12AA	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
M29W064FB60ZB3F	Micron Technology	FLASH																																																										3
M29F400FT55M3E	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G44							Not Qualified		TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT064MAY-1AH1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		64GX8	64G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm			29.85 mm				549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M58WR064KT7AZQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B88							Not Qualified		TOP	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MTFDDAT240MAV-2AH11ABYY	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
MTFDDAT128MAM-1K12AC	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
M29W800FT7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	1	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W064FB70ZA3E	Micron Technology
M29W320ET70ZS6T	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified		TOP	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
RD48F4000P0ZBQ0A	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM		R-PBGA-B88							Not Qualified		BOTTOM	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
MTFDDAK480MAV-1AH1ZAB	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5
M29DW127G70ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified		BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29F800FT55M3F2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G44		5.5 V	3 mm			12.6 mm	Not Qualified		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W320FT7AZA6F6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MT4F51232M-7T	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words				32	MICROELECTRONIC ASSEMBLY							512KX32	512K						SINGLE		R-XSMA-N80							Not Qualified			16777216 bit											70 ns	5
M29W128GH7AZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29F800FB55M3E	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G44							Not Qualified		BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W064FB6AZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm				67108864 bit	2.7 V								8 mm		60 ns	2.7
MTFDHBG3T8TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			4222124650659 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		3.84TX8	3.84T	0 Cel					UNSPECIFIED		R-XXMA-N										33776997205278 bit							TLC NAND TYPE
M29W320FT70ZA3F6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified		TOP	33554432 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAC064MAM-1K1AA	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5
M29F160FB55N3E2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	16777216 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MTFDDAV128MAY-1AH12AAYY	Micron Technology	FLASH MODULE	COMMERCIAL	75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					DUAL		R-XDMA-N75		3.46 V	3.58 mm			22 mm				1099511627776 bit	3.14 V						MLC NAND TYPE		80 mm			3.3
M29W400DB45N3T	Micron Technology	FLASH																																																										3
MTFDDAK120MAV-1AH1ZAA	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5
MTFDDAA128MAM-1K21AB	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
MTFDDAK256MAY-1AH12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					SINGLE		R-XSMA-X22		5.5 V	7 mm			69.85 mm				2199023255552 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAT256MAM1K11AC	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
MTFDDAK512MAY-1AE12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			549755813888 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					SINGLE		R-XSMA-X22		5.5 V	7 mm			69.85 mm				4398046511104 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29DW323DB7AN6	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				33554432 bit	2.7 V								18.4 mm		70 ns	3
MTFDDAV240MAV-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W160FT80ZA3SF6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified		TOP	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
SMC08GCFD6	Micron Technology	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	UNCASED CHIP					85 Cel		8GX8	8G	-40 Cel					UPPER		R-XUUC-N50		3.63 V	4.1 mm			36.4 mm				68719476736 bit	2.97 V	CAN ALSO OPERATE WITH 5V SUPPLY			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		42.8 mm			3.3
MTFDDAK120MAV-1AE11AB	Micron Technology	FLASH								CMOS																																											NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W640GT70ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAK960MAV-2AH1ZAB	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.