Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RC48F4400P0VB0E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN LEAD SILVER		BOTTOM		R-PBGA-B64	2 V	1.2 mm		52 MHz	10 mm	Not Qualified			BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE		e0			NOR TYPE	.00042 Amp	13 mm	YES	100 ns	1.8	NO
M29W256GH70ZS1E	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAV256TDL-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words				8	MICROELECTRONIC ASSEMBLY								256GX8	256G						UNSPECIFIED		R-XXMA-X										2199023255552 bit							TLC NAND TYPE
RD48F2000P0ZBQ0	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B88	2 V	1.2 mm			8 mm				BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		10 mm		88 ns	1.8
M29W320DB7AZE6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
PH28F320W18BE60	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B56	1.95 V	1 mm			7.7 mm	Not Qualified			BOTTOM	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE		9 mm		60 ns	1.8
RC28F640P30TF65	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		4MX16	4M	-40 Cel			TIN LEAD SILVER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm				TOP	67108864 bit	1.7 V	TOP BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE		13 mm		65 ns	1.8
RD48F5000M0YBB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-30 Cel	256	NO			BOTTOM		R-PBGA-B105						Not Qualified			BOTTOM	536870912 bit			16				NOR TYPE	.00003 Amp		YES	96 ns		NO
RD48F4000M0YUB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-30 Cel	128	NO			BOTTOM		R-PBGA-B105						Not Qualified			TOP	268435456 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
MTFDDAA050MAR-1K1	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
PC48F3000W0YC00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES			BOTTOM		R-PBGA-B44						Not Qualified			BOTTOM	134217728 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
MTFDDAT480MAV-2AH11ABYY	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
RD48F3000P0ZTQ0	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM		R-PBGA-B88	2 V	1.2 mm			8 mm				TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		10 mm		88 ns	1.8
M29W160ET70N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		1MX16	1M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				TOP	16777216 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
MTFDDAT512MAY-1AE12ACHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		512GX8	512G	0 Cel					DUAL		R-XDMA-N52	3.46 V	3.75 mm			29.85 mm					4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
GE28F160C3TC80	Micron Technology	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B46	3.6 V					Not Qualified			TOP	16777216 bit	2.7 V						NOR TYPE	.00002 Amp		YES	80 ns	3	NO
M29W320FB7AZA6E6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAT512MAY-1AE1ZACYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		512GX8	512G	0 Cel					DUAL		R-XDMA-N52	3.46 V	3.75 mm			29.85 mm					4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAV512TDL-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words				8	MICROELECTRONIC ASSEMBLY								512GX8	512G						UNSPECIFIED		R-XXMA-X										4398046511104 bit							TLC NAND TYPE
M29W256GL7AN6F	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified			BOTTOM/TOP	268435456 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDHAK400MCG-1AN1ZABYY	Micron Technology	FLASH								CMOS																																																			12
RC28F256P33BF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e0			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	2.7	NO
M29W128GH70ZA3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAT064MAR-1J11AB	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29DW256G60ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	8,126	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	60 ns		YES
RC48F2000W0YU00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B44						Not Qualified			TOP	67108864 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
M29W800FB5AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48						Not Qualified			BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
M29W320FT80ZA3SF6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48						Not Qualified			TOP	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAK480MAV-2AH1ZAB	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					5
MTFDDAK256MAZ-1AE12ACHA	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		256GX8	256G	0 Cel					SINGLE		R-XSMA-X22	5.5 V	7 mm			69.85 mm					2199023255552 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
RD48F6000M0YWB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	512	NO			BOTTOM		R-PBGA-B105						Not Qualified			TOP	1073741824 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
MTFDDAA050MAR-1K11	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDDAV240MAV-1AE11AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MT4LSFT3200H-133XX	Micron Technology	FLASH MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS			4194304 words	3.3			64	MICROELECTRONIC ASSEMBLY						70 Cel		4MX64	4M	0 Cel			GOLD		DUAL		R-XDMA-N144	3.6 V					Not Qualified	10 ms			268435456 bit	3 V			e4			NOR TYPE				5.4 ns	3.3
MTFDDAT128MAR-1J11AB	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29F200FT5AM6S	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44						Not Qualified			TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W160ET80N3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		1MX16	1M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		80 ns	3
M58WR016KT70ZQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B88						Not Qualified			TOP	16777216 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29F160FB55N3F2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
PC48F2000W0YU00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B44						Not Qualified			TOP	67108864 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
M45PE80-VMS6G	Micron Technology	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		8388608 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	6 mm			2.7
M29W160EB7AZS6	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				BOTTOM	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAK480MAV-2AE12ACYY	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					5
N28H00DB03E8D52E	Micron Technology	FLASH
MTFDCAE008SAF-1B1	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	8589934592 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		8GX8	8G	0 Cel					UNSPECIFIED		R-XXMA-X	5.25 V	9.7 mm			26.6 mm					68719476736 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29W320DT80ZA6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm				TOP	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
M29F160FT5AM6T2	Micron Technology	FLASH																																																											5
M29DW128F6AZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.