Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAT480MAV-1AE12AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W800FB55N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48				Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
MTFDDAT128MAM-1KAA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAK240MAV-1AH12ZZ	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
M29W320DB80ZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm		BOTTOM	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
M29W640GH7AZS3F	Micron Technology	FLASH																																																					3
M29F200FB5AM6T	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44				Not Qualified	BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W320DB7AZA6	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
RC28F128P33BF60B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	8388608 words		NO	2.5/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	134217728 bit			8				NOR TYPE	.002 Amp		YES	60 ns		NO
MTFDDAT256MAM-1K2AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W640GL90ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
MTFDDAK240MAV-2AH12AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAV120MAV-1AE11ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W640GT6ANA6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	3
MTFDJAA400MBS-1AN16ABYY	Micron Technology	FLASH																																														NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
M29W128GH6AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
MTFDDAT120MAV-1AE12ACYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N52		3.7 mm	29.85 mm										MLC NAND TYPE		50.8 mm			3.3
MTFDDAT240MAV-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MT8F832M-9T	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			8388608 words				32	MICROELECTRONIC ASSEMBLY							8MX32	8M						SINGLE	R-XSMA-N80				Not Qualified		268435456 bit											90 ns	5
M29W064FT70ZB6E	Micron Technology	FLASH																																																					3
MTFDDAA050MAR-1K11AC	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W320FB80N3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		2MX16	2M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		BOTTOM	33554432 bit	2.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		18.4 mm		80 ns	3
M29W400FB70ZA6E	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM	R-PBGA-B48				Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W320DT7AZE6T	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAA128MAM-1J12AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAK120MAV-1AH11AAYY	Micron Technology	FLASH								CMOS																																						NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M58BW016FB8T3F	Micron Technology	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		2K,16K	40 mA	524288 words		NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			QUAD	R-PQFP-G80				Not Qualified	BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		NO
M29DW256G7AZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			268435456 bit	2.7 V								13 mm		70 ns	3
M29W640GH90NB3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
M29W400DT70N3	Micron Technology	FLASH																																																					3
M29W256GL70N3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		16MX16	16M	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm	14 mm		BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
MTFDDAT120MAV-2AH12ABYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		120GX8	120G	0 Cel					SINGLE	R-XSMA-N52	3.46 V	3.75 mm	29.85 mm			1030792151040 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W064FB60ZA3F	Micron Technology
M58WR032KB70ZB6F	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.00005 Amp	9 mm	YES	70 ns	1.8	NO
MTFDDAC050SAL-1N1AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAT128MAY-1AH12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm			1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29DW323DT7AN6	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm			33554432 bit	2.7 V								18.4 mm		70 ns	3
MTFDDAK064MAY-1AH12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			68719476736 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		64GX8	64G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm			549755813888 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
RD48F4000M0YBB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-30 Cel	128	NO			BOTTOM	R-PBGA-B105				Not Qualified	BOTTOM	268435456 bit			16				NOR TYPE	.00003 Amp		YES	96 ns		NO
M58WR064KB7AZB6E	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.00005 Amp	9 mm	YES	70 ns	1.8	NO
M29DW128F6AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
MTFDDAK240MAV-2AH1ZAB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAT128MAM-1K12AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29F400FT55M3S	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44				Not Qualified	TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
PC48F1000W0YU00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B44				Not Qualified	TOP	33554432 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
MTFDCAE002SAF-1D1	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	2147483648 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		2GX8	2G	0 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm	26.6 mm			17179869184 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29W640GT70NA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29F400FB55N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48				Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.