Micron Technology Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

MTFDDAT128MAY-1AH12ABHA

Micron Technology

FLASH MODULE

COMMERCIAL

52

DIMM

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

137438953472 words

3.3

8

MICROELECTRONIC ASSEMBLY

70 Cel

128GX8

128G

0 Cel

DUAL

R-XDMA-N52

3.46 V

3.75 mm

29.85 mm

1099511627776 bit

3.14 V

MLC NAND TYPE

50.8 mm

3.3

RD48F6000M0YUB0

Micron Technology

FLASH

OTHER

105

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA105,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B105

Not Qualified

TOP

1073741824 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

MTFDDAT480MAV-1AH11ZZYY

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

M29W064FT70N3F

Micron Technology

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

10 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

4MX16

4M

-40 Cel

8,127

YES

MATTE TIN

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

2.7 V

TOP BOOT BLOCK

4/8

e3

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W640GH70ZS3F

Micron Technology

FLASH

AUTOMOTIVE

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

10 mA

4194304 words

3

YES

3/3.3

16

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

125 Cel

4MX16

4M

-40 Cel

128

YES

YES

BOTTOM

R-PBGA-B64

3.6 V

1.4 mm

11 mm

Not Qualified

67108864 bit

2.7 V

4/8

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

13 mm

YES

70 ns

3

YES

M29W160FT80N3SE6

Micron Technology

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

10 mA

1048576 words

YES

2.7/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

YES

DUAL

R-PDSO-G48

Not Qualified

TOP

16777216 bit

NOR TYPE

.0001 Amp

YES

80 ns

YES

M29F200FB55M3T2

Micron Technology

FLASH

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

30 mA

131072 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

125 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

YES

DUAL

R-PDSO-G44

5.5 V

3 mm

12.6 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

NOR TYPE

.00012 Amp

28.5 mm

YES

55 ns

5

YES

QB25F016S33B8

Micron Technology

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

45 mA

2097152 words

3/3.3

8

SMALL OUTLINE

SOP8,.3

Flash Memories

1.27 mm

85 Cel

2MX8

2M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

100000 Write/Erase Cycles

68 MHz

Not Qualified

SPI

BOTTOM

16777216 bit

NOR TYPE

.00007 Amp

MTFDDAK960MAV-2AH12ABYY

Micron Technology

FLASH MODULE

22

SMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

1030792151040 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

960GX8

960G

0 Cel

SINGLE

R-XSMA-N22

5.5 V

7 mm

69.85 mm

8246337208320 bit

4.5 V

MLC NAND TYPE

100.5 mm

5

MTFDDAT480MAV-1AE12ACHA

Micron Technology

FLASH MODULE

COMMERCIAL

22

SMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

515396075520 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

480GX8

480G

0 Cel

SINGLE

R-XSMA-N22

5.5 V

7 mm

69.85 mm

4123168604160 bit

4.5 V

MLC NAND TYPE

100.45 mm

5

MTFDDAA256MAM-1K2

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

M29W320DT70N3T

Micron Technology

FLASH

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

2097152 words

3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

2MX16

2M

-40 Cel

1,2,1,63

YES

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

33554432 bit

2.7 V

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W064FT60ZB3F

Micron Technology

FLASH

3

M58WR016KB70ZAQ6E

Micron Technology

FLASH

INDUSTRIAL

88

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

70 mA

1048576 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

85 Cel

1MX16

1M

-40 Cel

8,31

YES

BOTTOM

R-PBGA-B88

Not Qualified

BOTTOM

16777216 bit

4

NOR TYPE

.00005 Amp

YES

70 ns

NO

M29W400FB7AN6F

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

262144 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G48

Not Qualified

BOTTOM

4194304 bit

NOR TYPE

.0001 Amp

YES

70 ns

YES

M29W400FT90N6F

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

262144 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G48

Not Qualified

TOP

4194304 bit

NOR TYPE

.0001 Amp

YES

90 ns

YES

RC28F512M29EWL

Micron Technology

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

128K

50 mA

33554432 words

3

YES

3/3.3

16

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

32MX16

32M

-40 Cel

512

YES

Tin/Lead/Silver (Sn/Pb/Ag)

YES

BOTTOM

R-PBGA-B64

3.6 V

1.4 mm

11 mm

Not Qualified

536870912 bit

2.7 V

16/32

e0

30

235

NOR TYPE

.000225 Amp

13 mm

YES

100 ns

3

YES

MTFDDAK480MAV-2AE11AAYY

Micron Technology

FLASH

CMOS

MLC NAND TYPE

5

MTFDDAC064MAM-1K22AC

Micron Technology

FLASH

CMOS

MLC NAND TYPE

5

MTFDDAA512MAM-1J22AA

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

M58BW016FT8ZA3FT

Micron Technology

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

524288 words

3

32

GRID ARRAY, LOW PROFILE

1 mm

125 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B80

3.6 V

1.6 mm

10 mm

TOP

16777216 bit

2.7 V

NOR TYPE

12 mm

80 ns

3

M29DW256G7ANF1F

Micron Technology

FLASH

COMMERCIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32K,128K

20 mA

16777216 words

3

YES

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

1

20

.5 mm

70 Cel

16MX16

16M

0 Cel

8,126

YES

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

100000 Write/Erase Cycles

14 mm

BOTTOM/TOP

268435456 bit

2.7 V

8

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29F800FB5AN6T

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

AEC-Q100

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

524288 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G48

Not Qualified

BOTTOM

8388608 bit

NOR TYPE

.00012 Amp

YES

55 ns

YES

M29W800FB70N3ST

Micron Technology

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

125 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

BOTTOM

8388608 bit

3 V

BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

70 ns

3

M58WR064HU70ZB6U

Micron Technology

FLASH

INDUSTRIAL

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

50 mA

4194304 words

1.8

NO

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

TIN SILVER COPPER

BOTTOM

R-PBGA-B44

2 V

1 mm

7.7 mm

Not Qualified

TOP

67108864 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

4

e1

NOR TYPE

.00001 Amp

9 mm

YES

70 ns

1.8

NO

M29W640GB7ANB6F

Micron Technology

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

4/8

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29F400FT5AN6S

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

AEC-Q100

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G48

Not Qualified

TOP

4194304 bit

NOR TYPE

.00012 Amp

YES

55 ns

YES

GE28F256L30T85

Micron Technology

FLASH

OTHER

79

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

51 mA

16777216 words

NO

1.8,2.5/3

16

GRID ARRAY, FINE PITCH

BGA79,7X13,30

Flash Memories

.75 mm

85 Cel

16MX16

16M

-25 Cel

4,255

YES

BOTTOM

R-PBGA-B79

Not Qualified

TOP

268435456 bit

4

NOR TYPE

.000115 Amp

YES

85 ns

NO

MTFDDAA050MAR-1K1AB

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

M29W064FB7AZA6F

Micron Technology

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

4194304 words

3

YES

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

20

.8 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

BOTTOM

67108864 bit

2.7 V

4

.0001 Amp

8 mm

YES

70 ns

3

YES

MTFDDAT120MAV-2AE12AAYY

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

MTFDHBA480TDF-1AW12ABYY

Micron Technology

FLASH MODULE

XMA

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

515396075520 words

8

MICROELECTRONIC ASSEMBLY

70 Cel

480GX8

480G

0 Cel

UNSPECIFIED

R-XXMA-N

4123168604160 bit

TLC NAND TYPE

M29W400FB90N6E

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

262144 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G48

Not Qualified

BOTTOM

4194304 bit

NOR TYPE

.0001 Amp

YES

90 ns

YES

MTFDDAK120MAV-2AH12AAYY

Micron Technology

FLASH

CMOS

NOT SPECIFIED

NOT SPECIFIED

MLC NAND TYPE

5

MTFDDAA050MAR-1K11AA

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

M29W128GL70N1F

Micron Technology

FLASH

COMMERCIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

20 mA

8192 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

70 Cel

8KX16

8K

0 Cel

128

YES

MATTE TIN

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

.00007 ms

131072 bit

2.7 V

8/16

e3

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

MTFDDAT480MAV-1AH12AAYY

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

RC28F256M29EWL

Micron Technology

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

128K

50 mA

16777216 words

3

YES

3/3.3

16

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

16MX16

16M

-40 Cel

256

YES

TIN LEAD SILVER

YES

BOTTOM

R-PBGA-B64

3.6 V

1.4 mm

11 mm

Not Qualified

268435456 bit

2.7 V

16/32

e0

NOR TYPE

.00021 Amp

13 mm

YES

100 ns

3

YES

MTFDDAV512MAY-1AE1ZACYY

Micron Technology

FLASH MODULE

COMMERCIAL

75

SMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

549755813888 words

3.3

8

MICROELECTRONIC ASSEMBLY

70 Cel

512GX8

512G

0 Cel

DUAL

R-XDMA-N75

3.46 V

3.58 mm

22 mm

4398046511104 bit

3.14 V

MLC NAND TYPE

80 mm

3.3

GE28F320C3TC90

Micron Technology

FLASH

INDUSTRIAL

47

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

18 mA

2097152 words

3

NO

1.8/3.3,3/3.3

16

GRID ARRAY, FINE PITCH

BGA47,6X8,30

Flash Memories

.75 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

BOTTOM

R-PBGA-B47

3.6 V

Not Qualified

TOP

33554432 bit

2.7 V

NOR TYPE

.00002 Amp

YES

90 ns

3

NO

MTFDCAE001SAF-1C3

Micron Technology

FLASH MODULE

COMMERCIAL

XMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

SERIAL

ASYNCHRONOUS

120 mA

1073741824 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

1GX8

1G

0 Cel

UNSPECIFIED

R-XXMA-X

5.25 V

9.7 mm

26.6 mm

8589934592 bit

4.75 V

SLC NAND TYPE

.06 Amp

36.9 mm

5

M29W160EB70ZA3E

Micron Technology

FLASH

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

8

.8 mm

125 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

BOTTOM

16777216 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

8 mm

70 ns

3

M29W400FT5AN6T

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G48

1

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

NOR TYPE

.0001 Amp

18.4 mm

YES

55 ns

3

YES

M58WT032KT70ZAQ6E

Micron Technology

FLASH

INDUSTRIAL

88

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

70 mA

2097152 words

NO

1.8,3

16

GRID ARRAY, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

BOTTOM

R-PBGA-B88

Not Qualified

TOP

33554432 bit

4

NOR TYPE

.00005 Amp

YES

70 ns

NO

MTFDDAT128MAM-1J1

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

M29F160FB5AN6T2

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

30 mA

1048576 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

BOTTOM

16777216 bit

4.5 V

NOR TYPE

.00012 Amp

18.4 mm

YES

55 ns

5

YES

M29W320ET70ZS6

Micron Technology

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

GRID ARRAY, LOW PROFILE

BGA64,8X8,32

8

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

YES

BOTTOM

R-PBGA-B64

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

2.7 V

NOR TYPE

.0001 Amp

13 mm

YES

70 ns

3

YES

MTFDCAE004SAF-1C1IT

Micron Technology

FLASH MODULE

INDUSTRIAL

XMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

SERIAL

ASYNCHRONOUS

120 mA

4294967296 words

5

8

MICROELECTRONIC ASSEMBLY

85 Cel

4GX8

4G

-40 Cel

UNSPECIFIED

R-XXMA-X

5.25 V

9.7 mm

26.6 mm

34359738368 bit

4.75 V

SLC NAND TYPE

.06 Amp

36.9 mm

5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.