Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W128GSH70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64					Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAT120MAV-1AE11AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm		69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAA200MAR-1K12AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W320FB80ZA3E6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48					Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAK256MAY-1AH1ZZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		256GX8	256G	0 Cel					SINGLE		R-XSMA-X22	5.5 V	7 mm		69.85 mm			2199023255552 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDCAE004SAF-1C3	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	4294967296 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		4GX8	4G	0 Cel					UNSPECIFIED		R-XXMA-X	5.25 V	9.7 mm		26.6 mm			34359738368 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29F800FB55M3F	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G44					Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W160FB80N3SE6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48					Not Qualified	BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MQAT020A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				20971520 words	3.3			8	MICROELECTRONIC ASSEMBLY						60 Cel		20MX8	20M	0 Cel					UNSPECIFIED		X-XXMA-X50	3.6 V				Not Qualified		167772160 bit	3 V	ALSO WORKS WITH 5V VCC					NOR TYPE					3
M29W640GL7ANB6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified		67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W320FB80N3E6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	2.7/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	DUAL		R-PDSO-G48					Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAT032MAM1J12	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
PZ28F032M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
M29DW256G7AZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	32K,128K	20 mA	16777216 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	1		20	1 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm		BOTTOM/TOP	268435456 bit	2.7 V		8				NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAT120MAV-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm		69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK100MAR-1J1AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAK240MAV-1AH12AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
M29W320DB80ZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm		6 mm		BOTTOM	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
M58WT032KB70ZAQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM		R-PBGA-B88					Not Qualified	BOTTOM	33554432 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29F400FB55N3S	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48					Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W800FT70N6ST	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		512KX16	512K	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm		TOP	8388608 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
MTFDJAK480MBT-2AN1ZABYY	Micron Technology	FLASH																																																								3.3
M29W320ET70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,32	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm		11 mm	Not Qualified	TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAC064MAM-1J21AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAA512MAM-1K21AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M58WR064HU70ZA6U	Micron Technology	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY					1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B80	2 V	1.6 mm		10 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		12 mm			1.8
MTFDDAK120MAV-2AE1ZAC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAT256MAM-1K2AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAT064MAM1J1AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAK960MAV-1AE1ZAC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
M29W640GB60ZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm		11 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		60 ns	3
M29W640GT6AZF3E	Micron Technology	FLASH																																																								3
MTFDDAT256MAM1J112AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W320DT70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified	TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W256GH7AZA3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.2 mm		10 mm		BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29F200FT55M3T2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44	5.5 V	3 mm		12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V						NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W160EB7AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		1MX16	1M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3.6 V	1.2 mm		6 mm		BOTTOM	16777216 bit	2.7 V			e1			NOR TYPE		8 mm		70 ns	3
M29F400FB55M6E	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G44					Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT120MAV-1AE12AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAV240MAV-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm		69.85 mm			2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W400FB7AZA6T	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM		R-PBGA-B48					Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W320FT80ZASE	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48					Not Qualified	TOP	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M29W320ET70ZS1F	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm		11 mm		TOP	33554432 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAT128MAY-1AH12AAYY	Micron Technology	FLASH MODULE	INDUSTRIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY						85 Cel	3-STATE	128GX8	128G	-40 Cel					DUAL		R-XDMA-N52	3.46 V	3.75 mm		29.85 mm			1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W320ET70ZS1	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm		11 mm		TOP	33554432 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAT512MAY-1AE12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		512GX8	512G	0 Cel					DUAL	HARDWARE	R-XDMA-N52	3.46 V	3.75 mm		29.85 mm			4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W320DB7AZE6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAT480MAV-2AE11ZZYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.