Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAV240MAV-1AE12ACHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W256GH60N3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		16MX16	16M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	3
M29W640GB7AZF3F	Micron Technology	FLASH																																																									3
M29W640GH60ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm				67108864 bit	2.7 V			e1			NOR TYPE		13 mm		60 ns	3
M29W256GL7AZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified	.00007 ms	BOTTOM/TOP	268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAA512MAM-1J12AC	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAT480MAV-1AE12AB	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		480GX8	480G	0 Cel					SINGLE	R-XSMA-N52		3.46 V	3.75 mm		29.85 mm				4123168604160 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAK240MAV-1AH1ZAA	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
M29W400FT70ZA6F	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified		TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29DW256G7AZS1F	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	32K,128K	20 mA	16777216 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		20	1 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			BOTTOM/TOP	268435456 bit	2.7 V		8				NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29F800FT5AM6F	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44						Not Qualified		TOP	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
CT128M225	Micron Technology	FLASH MODULE	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		128GX8	128G	0 Cel					SINGLE	R-XXMA-N			9.5 mm		69.85 mm				1099511627776 bit							NAND TYPE		100.2 mm
M29W320FT80N3SF6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	2.7/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
PH28F128W30BD70	Micron Technology	FLASH	INDUSTRIAL	60	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	8388608 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA60,9X10,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES			BOTTOM	R-PBGA-B60						Not Qualified		BOTTOM	134217728 bit			4				NOR TYPE	.00007 Amp		YES	70 ns		NO
M29W800FB5AN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48						Not Qualified		BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
M29DW128F6ANF6F	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	DUAL	R-PDSO-G56						Not Qualified		BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
MTFDDAT128MAZ-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		128GX8	128G	0 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm		29.85 mm				1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W128GL7AZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W320DT7AZA6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified		TOP	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
RD48F6000M0YCC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	512	NO			BOTTOM	R-PBGA-B107						Not Qualified		BOTTOM	1073741824 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GB7AZA3E	Micron Technology	FLASH																																																									3
MTFDCAE008SAF-1B1IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	8589934592 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		8GX8	8G	-40 Cel					UNSPECIFIED	R-XXMA-X		5.25 V	9.7 mm		26.6 mm				68719476736 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAT240MAV-1AE11ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W400FB90N6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48						Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
MTFDDAV480MAV-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W128GH60N1E	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel		8KX16	8K	0 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			131072 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
MTFDDAK120MAV-2AE1ZAB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
M29W640GH7AZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAK050MAR-1J1	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
M29W400FB55N6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES
MTFDDAA512MAM-1J21AB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAA512MAM-1K1AB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAK120MAV-1AE12AA	Micron Technology	FLASH								CMOS																																										NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
MTFDDAC064MAM-1J1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										MICROELECTRONIC ASSEMBLY															UNSPECIFIED	R-XXMA-N			9.7 mm		69.85 mm											MLC NAND TYPE		100.2 mm			5
M29W160FB80N3F6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48						Not Qualified		BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M29W128GSH70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29F160FT5AN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	16777216 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29F160FT5AM6F2	Micron Technology	FLASH																																																									5
MTFDDAA256MAM-1J21	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
M29W320DT80N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	125 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm				33554432 bit	2.7 V								18.4 mm		80 ns	3
M29F200FB5AM6F2	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm		12.6 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
MTFDDAK240MAV-1AE11ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAT256MAM1J112	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAT240MAV-1AH11ACYY	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAV064MAY-1AH12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		64GX8	64G	0 Cel					DUAL	R-XDMA-N75		3.46 V	3.58 mm		22 mm				549755813888 bit	3.14 V						MLC NAND TYPE		80 mm			3.3
M29W400FB70N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48						Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W400FT7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAK240MAV-1AE12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.