Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAT240MAV-2AH12AAYY	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAT240MAV-1AE12ZZYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP													UPPER	R-XUUC-N52			3.7 mm	29.85 mm											MLC NAND TYPE		50.8 mm			3.3
JR28F032M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
MTFDDAT256MAM-1J2AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W064FT60N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified		TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
MTFDCAE001SAF-1B3IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	1073741824 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel	1GX8	1G	-40 Cel					UNSPECIFIED	R-XXMA-X		5.25 V	9.7 mm	26.6 mm				8589934592 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAT064MAM1J12AC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
PZ28F032M29EWBB	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
MTFDDAA128MAM-1J1AC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAK480MAV-1AH11ZZYY	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
MTFDDAT128MAZ-1AE12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel	128GX8	128G	0 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm	29.85 mm				1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAK064MBD-AAH12ITYYES	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel	64GX8	64G	-40 Cel					SINGLE	R-XSMA-N22		5.5 V	7.2 mm	69.85 mm				549755813888 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK120MAV-1AE12AC	Micron Technology	FLASH								CMOS																																							NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W640GB6ANA6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel	4MX16	4M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			BOTTOM	67108864 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	3
RC48F4400P0VB0EJ	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES	Tin/Lead/Silver (Sn/Pb/Ag)		BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e0	30	235	NOR TYPE	.00042 Amp	13 mm	YES	17 ns	1.8	NO
MTFDDAT256MAZ-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel	256GX8	256G	0 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm	29.85 mm				2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W320ET70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified		TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W160ET70ZS6T	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm			TOP	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAT256MAY-1AH1ZAAYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel	256GX8	256G	0 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm	29.85 mm				2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
RD48F3300L0ZDQ0	Micron Technology	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B88		2 V	1.2 mm	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		10 mm		85 ns	1.8
M29W256GH70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified	.00007 ms		268435456 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAK960MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					1030792151040 words	5			8	FLANGE MOUNT					70 Cel	960GX8	960G	0 Cel		NO			UNSPECIFIED	R-XXFM-X22		5.5 V	7 mm	69.85 mm				8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5	NO
M29F800FB55M6F	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44					Not Qualified		BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M39LNR9A90E1P5HE	Micron Technology	FLASH																																																						1.8
M29DW323DB7AZE6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm				33554432 bit	2.7 V								8 mm		70 ns	3
M29F400FB5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29F400FT55M6S	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44					Not Qualified		TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W400FT55N6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm	12 mm	Not Qualified		TOP	4194304 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES
MTFDDAT032MAM1J11	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W640GT90NB3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel	4MX16	4M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
MTFDDAA050MAR-1J11AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAK128MBD-AAH12ITYYES	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel	128GX8	128G	-40 Cel					SINGLE	R-XSMA-N22		5.5 V	7.2 mm	69.85 mm				1099511627776 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W320ET90ZS1T	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm			TOP	33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
MTFDDAK960MAV-2AE12AAYY	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
M29W640GT6ANB3F	Micron Technology	FLASH																																																						3
M29W800FB70N3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel	512KX16	512K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
RD48F4400P0VBQ0B	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	R-PBGA-B88					Not Qualified		BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
MTFDDAK064SBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				68719476736 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel	64GX8	64G	-40 Cel					SINGLE	R-XSMA-X22		5.5 V	7.2 mm	69.85 mm				549755813888 bit	4.5 V	LENGTH_MAX			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		100.45 mm			5
M29W800FB70N6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W256GL60ZS1F	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
MTFDCAE004SAF-1B2IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	4294967296 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel	4GX8	4G	-40 Cel					UNSPECIFIED	R-XXMA-X		5.25 V	9.7 mm	26.6 mm				34359738368 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
RD48F3000P0XBQ0A	Micron Technology	FLASH	INDUSTRIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	8388608 words		NO	2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA64,10X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B64					Not Qualified		BOTTOM	134217728 bit			4				NOR TYPE	.000155 Amp		YES	85 ns		NO
M29W800FT70N6SF	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel	512KX16	512K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			TOP	8388608 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
MTFDDAC064MAM-1K1AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
M29W256GH70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified	.00007 ms		268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W640GB60ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		60 ns	3
MTCF016A-XXX	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	MICROELECTRONIC ASSEMBLY					60 Cel	8MX16	8M	0 Cel					UNSPECIFIED	X-XXMA-X50		3.465 V			Not Qualified			134217728 bit	3.135 V	CAN ALSO OPERATE WITH 5V SUPPLY					NOR TYPE					3.3
M29W400FB5AN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.