Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDJAL3T2MBS-2AN1ZABYY	Micron Technology	FLASH																																																					3.3
M29F400FB55N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48				Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT256MAZ-1AE12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm			2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAK120MAV-1AH12AAYY	Micron Technology	FLASH								CMOS																																						NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
MTFDDAT128MAR-1J1AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAT128MAR-1K12AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAT240MAV-2AE12ABYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		240GX8	240G	0 Cel					SINGLE	R-XSMA-N52	3.46 V	3.75 mm	29.85 mm			2061584302080 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAK240MAV-2AE12AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
M29W800FT90N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48				Not Qualified	TOP	8388608 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
RD48F3000P0ZTQE	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B88	2 V	1.2 mm	8 mm		TOP	134217728 bit	1.7 V	TOP BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		10 mm		65 ns	1.8
M29W800FB70ZA6ST	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDDAV120MAV-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDHAX3T2MCE-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS		UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		3200GX8	3.2T	0 Cel					UNSPECIFIED	R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDDAT240MAV-1AH12ZZYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		240GX8	240G	0 Cel					SINGLE	R-XSMA-N52	3.46 V	3.75 mm	29.85 mm			2061584302080 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29DW323DT7AZE6T	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm			33554432 bit	2.7 V								8 mm		70 ns	3
M58WR016KT7AZB6E	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B56				Not Qualified	TOP	16777216 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W640GB6AZA3E	Micron Technology	FLASH																																																					3
M29W640GH6ANA3F	Micron Technology	FLASH																																																					3
MTFDDAA100MAR-1J11AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29F200FT5AM6T	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44				Not Qualified	TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29F200FT55M3F2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44	5.5 V	3 mm	12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
MTFDDAK200MAR-1K1	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
RC28F160C3BC90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.00002 Amp	13 mm	YES	90 ns	3	NO
M29W320EB90ZS1T	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm		BOTTOM	33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
M29W256GL60ZS1E	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
RC28F512M29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V		16/32	e0			NOR TYPE	.000225 Amp	13 mm	YES	100 ns	3	YES
RD48F4000M0YFC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-30 Cel	128	NO			BOTTOM	R-PBGA-B107				Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
MTFDDAC064MAM-1K21AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
RD48F2000W0YCQ0	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	67108864 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
MTFDDAK1T0MAY-1AE12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			1099511627776 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		1TX8	1T	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm			8796093022208 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAV512MAY-1AE1ZZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					DUAL	R-XDMA-N75	3.46 V	3.58 mm	22 mm			4398046511104 bit	3.14 V						MLC NAND TYPE		80 mm			3.3
M29W064FT70ZA3F	Micron Technology
M29W128GH60ZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W640GB60ZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		60 ns	3
PF4000L0YCQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES			BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00011 Amp		YES	85 ns		NO
M29W640GL6AZF6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
MTFDDAT256MAM1J11	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29F200FT55N6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48				Not Qualified	TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK128MBD-2AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			137438953472 words				8	MICROELECTRONIC ASSEMBLY					85 Cel		128GX8	128G	-40 Cel					SINGLE	R-XSMA-N						1099511627776 bit							TLC NAND TYPE
MT4LSFT3200H-13E	Micron Technology
GT28F160C3BA90	Micron Technology	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B46	3.6 V	1 mm	6.964 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V						NOR TYPE	.000025 Amp	7.286 mm	YES	90 ns	3	NO
GE28F640W30TC70	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B56				Not Qualified	TOP	67108864 bit			4				NOR TYPE	.000021 Amp		YES	70 ns		NO
M29W640GL7AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		70 ns	3
M29W800FB7AZA6SE	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
M29W320FB7AZA6F6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAK064SBD-AAH12ITYYES	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				68719476736 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel		64GX8	64G	-40 Cel					SINGLE	R-XSMA-X22	5.5 V	7.2 mm	69.85 mm			549755813888 bit	4.5 V	LENGTH_MAX					SLC NAND TYPE		100.45 mm			5
MTFDDAA064MAM-1J2AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W400FB5AN6SE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.