Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAK200MAR-1K1AA	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
MTFDHBA1T0TDV-1AZ12ABYY	Micron Technology
MTFDDAK240MAV-1AE12AA	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
M29W320FT80ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm			TOP	33554432 bit	2.5 V	TOP BOOT BLOCK		e1			NOR TYPE		8 mm		80 ns	3
M29W640GB6AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm			BOTTOM	67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29W400FT55ZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm			6 mm	Not Qualified		TOP	4194304 bit	3 V	TOP BOOT BLOCK					NOR TYPE	.0001 Amp	8 mm	YES	55 ns	3	YES
GE28F160C3TC90	Micron Technology	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B46		3.6 V					Not Qualified		TOP	16777216 bit	2.7 V						NOR TYPE	.00002 Amp		YES	90 ns	3	NO
M29W640GH6AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm				67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29W640GL6AZA3E	Micron Technology	FLASH																																																									3
M29W800FT7AZA3ST	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel	512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
M29W064FT60ZA3E	Micron Technology
MTFDDAA128MAM-1K12AB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAA064MAM-1J12AA	Micron Technology	FLASH								CMOS																																										NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
RC28F128J3F75A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	Tin/Lead/Silver (Sn/Pb/Ag)	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			134217728 bit	2.7 V		4/8	e0	30	235	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
M29W400FB5AZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel	256KX16	256K	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm			BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
RC28F320C3TA100	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	100 ns	3	NO
MTFDJAK400MBW-2AN1ZABYY	Micron Technology	FLASH																																																				SLC NAND TYPE					3.3
MTFDDAC200SAL-1N1	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
MTFDHAL3T8TDP-2AT1ZABYY	Micron Technology	FLASH
RC28F800C3TA90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	512KX16	512K	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	90 ns	3	NO
MTFDDAA200MAR-1J1	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAK512MAM-1J2	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
MTFDDAA100MAR-1J12AC	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
MTFDDAT256MBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			274877906944 words				8	MICROELECTRONIC ASSEMBLY					85 Cel	256GX8	256G	-40 Cel					SINGLE		R-XSMA-N										2199023255552 bit							TLC NAND TYPE
M29F200FT55M3E	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44							Not Qualified		TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W256GH7AN1E	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	70 Cel	16MX16	16M	0 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
M58WR064KB70ZAQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B88							Not Qualified		BOTTOM	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MTFDDAK240MAV-2AH11AB	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
MTFDCAE001SAF-1B2	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	1073741824 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	1GX8	1G	0 Cel					UNSPECIFIED		R-XXMA-X		5.25 V	9.7 mm			26.6 mm				8589934592 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29W800FB90ZA6E	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified		BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
MTFDDAT256MAM-1J1	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
M29F200FB55N6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G48							Not Qualified		BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDCAE008SAJ-1N1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED										MICROELECTRONIC ASSEMBLY											TIN SILVER COPPER		UNSPECIFIED		R-XXMA-X							Not Qualified							e1								5
QB25F320S33B8	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			45 mA	4194304 words			3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	1.27 mm	85 Cel	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16				100000 Write/Erase Cycles	68 MHz		Not Qualified	SPI	BOTTOM	33554432 bit							NOR TYPE	.00007 Amp
RD48F3000W0YBQ0	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	8, 255	YES			BOTTOM		R-PBGA-B88							Not Qualified		BOTTOM	134217728 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
M29W320FB7AN6F6	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	1,2,1,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAK240MAV-2AE12AA	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
MTFDDAT512MAY-1AE1ZAAYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel	512GX8	512G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm			29.85 mm				4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W400FT55ZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm			6 mm	Not Qualified		TOP	4194304 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	8 mm	YES	55 ns	3	YES
M29F160FB5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	16777216 bit	4.5 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MT8F832M-7B	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			8388608 words				32	MICROELECTRONIC ASSEMBLY						8MX32	8M						SINGLE		R-XSMA-N80							Not Qualified			268435456 bit											70 ns	5
MTFDDAA256MAM-1K21AC	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					3.3
M29F400FT55N3F2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M58WR064KT70ZQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B88							Not Qualified		TOP	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29F200FB5AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G48							Not Qualified		BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT480MAV-1AE12ZZ	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel	480GX8	480G	0 Cel					SINGLE		R-XSMA-N52		3.46 V	3.75 mm			29.85 mm				4123168604160 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDHBG1T9TDF-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			2111062325329 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	1.92TX8	1.92T	0 Cel					UNSPECIFIED		R-XXMA-N										16888498602639 bit							TLC NAND TYPE
SMC01GCFC6E	Micron Technology	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	UNCASED CHIP					85 Cel	1GX8	1G	-40 Cel					UPPER		R-XUUC-N50		3.63 V	4.1 mm			36.4 mm				8589934592 bit	2.97 V	CAN ALSO OPERATE WITH 5V SUPPLY			NOT SPECIFIED	NOT SPECIFIED			42.8 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.