Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RD48F4000M0YFB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-30 Cel	128	NO			BOTTOM		R-PBGA-B105						Not Qualified		BOTTOM	268435456 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GT60ZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		60 ns	3
MTFDDAA256MAM-1K1AC	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
M29W640GH60ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		60 ns	3
M29W640GL70NA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		4MX16	4M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAK200MAR	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5
M29DW256G7AZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	32K,128K	20 mA	16777216 words	3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	1		20	1 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm			BOTTOM/TOP	268435456 bit	2.7 V		8				NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDJAK960MBT-2AN1ZABYY	Micron Technology	FLASH																																																					SLC NAND TYPE					3.3
MTFDDAC064MAM-1K11AC	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5
M29W256GH60ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
MTFDDAV120MAV-1AE12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29F200FB5AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G48						Not Qualified		BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29DW256G7AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				268435456 bit	2.7 V								13 mm		70 ns	3
M29W640GB6AZA3F	Micron Technology	FLASH																																																										3
M29DW128F6ANF6	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	DUAL		R-PDSO-G56						Not Qualified		BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
MTFDDAA256MAM-1J12AA	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
MTFDDAK120MAV-1AH1ZZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		120GX8	120G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm				1030792151040 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.5 mm			5
MTFDDAT128MAM1J112	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
M29W128GL6AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
QH25F160S33B8	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			45 mA	2097152 words			3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories		1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16			100000 Write/Erase Cycles	68 MHz		Not Qualified	SPI	BOTTOM	16777216 bit							NOR TYPE	.00007 Amp
M29W400FT70ZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM		R-PBGA-B48						Not Qualified		TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAK400MAR-1K1	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5
MTFDDAT256MAY-1AH12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		256GX8	256G	0 Cel					DUAL		R-XDMA-N52	3.46 V	3.75 mm			29.85 mm				2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAT128MAM-1J12	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
M29W640GT6AZS3F	Micron Technology	FLASH																																																										3
M29W640GB7AZS3F	Micron Technology	FLASH																																																										3
M29F160FB5AM6E2	Micron Technology	FLASH																																																										5
M29F400FT5AN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48						Not Qualified		TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT120MAV-2AE1ZAB	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
M29W256GH7AZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M58WR064KT70ZAQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B88						Not Qualified		TOP	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MT8F832M-9S	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			8388608 words				32	MICROELECTRONIC ASSEMBLY								8MX32	8M						SINGLE		R-XSMA-N80						Not Qualified			268435456 bit											90 ns	5
MT8LSFT6400H-133	Micron Technology
RD48F4000P0XBQ0	Micron Technology	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM		R-PBGA-B80	3.6 V	1 mm			8 mm	Not Qualified		BOTTOM	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000195 Amp	11 mm	YES	85 ns	3	NO
M58WR032KT7AZB6E	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM		R-PBGA-B56						Not Qualified		TOP	33554432 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29F400FB5AM6E	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G44						Not Qualified		BOTTOM	4194304 bit					30	260	NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK1T9TDS-1AW16AB	Micron Technology	FLASH MODULE
M29F160FT55N3T2	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		TOP	16777216 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W128GL60ZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	70 Cel		8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
MTFDDAK240MAV-2AH12ZZ	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5
RD48F6000M0YTB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	512	NO			BOTTOM		R-PBGA-B105						Not Qualified		TOP	1073741824 bit			16				NOR TYPE	.000005 Amp		YES	96 ns		NO
M29W160ET80ZS3S	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm			TOP	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
RC28F800C3TD70	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		512KX16	512K	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.00002 Amp	13 mm	YES	70 ns	3	NO
PH28F320W30TC70	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM		R-PBGA-B56						Not Qualified		TOP	33554432 bit			4				NOR TYPE	.000021 Amp		YES	70 ns		NO
MTFDDAT120MAV-1AH11ACYY	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
M29W800FB90ZA6F	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM		R-PBGA-B48						Not Qualified		BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
M29W640GH90ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		90 ns	3
M29F400FT55N32	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		TOP	4194304 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.