Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAT256MAR-1J11AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W128GL70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W256GH7AZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm	11 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAT480MAV-2AE12ABYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G	0 Cel					SINGLE		R-XSMA-N52		3.46 V	3.75 mm	29.85 mm				4123168604160 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAK960MAV-1AE12AAYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER		R-XUUC-N22			7 mm	69.85 mm											MLC NAND TYPE		100.5 mm			3.3
M29W320FB80ZA3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm	6 mm			BOTTOM	33554432 bit	2.5 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		8 mm		80 ns	3
M58WR016KB70ZAQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B88					Not Qualified		BOTTOM	16777216 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MTFDDAA100MAR-1K11AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M58WR032KB70ZAQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM		R-PBGA-B88							BOTTOM	33554432 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MTFDDAA128MAM-1J2	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAK480MAV-2AE1ZAB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAT256MAY-1AH12ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					DUAL	HARDWARE	R-XDMA-N52		3.46 V	3.75 mm	29.85 mm				2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAT120MAV-1AE1ZZZYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		120GX8	120G	0 Cel					SINGLE		R-XSMA-N52		3.46 V	3.75 mm	29.85 mm				1030792151040 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29F200FB55M32	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44		5.5 V	3 mm	12.6 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V						NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W400DT45N3	Micron Technology	FLASH																																																								3
M29W160EB70ZA3SF	Micron Technology	FLASH																																																								3
RD48F3000P0ZTQ0A	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM		R-PBGA-B88					Not Qualified		TOP	134217728 bit			4				NOR TYPE	.000075 Amp		YES	85 ns		NO
M29F400FB55N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48					Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT064SBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY					85 Cel		64GX8	64G	-40 Cel					DUAL		R-XDMA-N52		3.46 V	2.4 mm	29.85 mm				549755813888 bit	3.14 V						SLC NAND TYPE		50.8 mm			3.3
MTFDDAT480MAV-2AH11ACYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W320EB70ZS1E	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm	11 mm			BOTTOM	33554432 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29F800FT55M3S	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G44					Not Qualified		TOP	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT240MAV-1AE1ZAA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W160ET70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W064FT6AZB6E	Micron Technology	FLASH																																																								3
GE28F320W30BC70	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM		R-PBGA-B56					Not Qualified		BOTTOM	33554432 bit			4				NOR TYPE	.000021 Amp		YES	70 ns		NO
MTFDDAC512MAM-1K1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										MICROELECTRONIC ASSEMBLY														UNSPECIFIED		R-XXMA-N			9.7 mm	69.85 mm											MLC NAND TYPE		100.2 mm			5
M29W128GH60ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W400FB55ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm	6 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	8 mm	YES	55 ns	3	YES
MTFDDAK480MAV-1AE11ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm	69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDCAE002SAF-1C3	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	2147483648 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		2GX8	2G	0 Cel					UNSPECIFIED		R-XXMA-X		5.25 V	9.7 mm	26.6 mm				17179869184 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAK240MAV-1AE11ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm	69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK960MAV-1AH11ACYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
RD48F5000M0YFB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	256	NO			BOTTOM		R-PBGA-B105					Not Qualified		BOTTOM	536870912 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29F400FT5AM6T	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G44					Not Qualified		TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W256GL70ZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29F200FB5AN6F2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm	12 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MTFDDAK128MAZ-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					SINGLE		R-XSMA-X22		5.5 V	7 mm	69.85 mm				1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
RD48F5000M0YUB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	256	NO			BOTTOM		R-PBGA-B105					Not Qualified		TOP	536870912 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
MTFDHBE6T4TDG-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			7036874417766 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		6.4TX8	6.4T	0 Cel					UNSPECIFIED		R-XXMA-N								56294995342131 bit							TLC NAND TYPE
M29W160EB70N3ST	Micron Technology	FLASH																																																								3
M58WR032KB70ZB6E	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B56		2 V	1 mm	7.7 mm	Not Qualified		BOTTOM	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.00005 Amp	9 mm	YES	70 ns	1.8	NO
MTFDDAK240MAV-1AE11ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm	69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK120MBP-1AN16AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
M29W256GH7AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified	.00007 ms		268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAC064MAM-1K1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										MICROELECTRONIC ASSEMBLY														UNSPECIFIED		R-XXMA-N			9.7 mm	69.85 mm											MLC NAND TYPE		100.2 mm			5
MTFDDAT480MAV-2AE1ZZZYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G	0 Cel					SINGLE		R-XSMA-N52		3.46 V	3.75 mm	29.85 mm				4123168604160 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W320FT80N3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		2MX16	2M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm	12 mm			TOP	33554432 bit	2.5 V	TOP BOOT BLOCK		e3			NOR TYPE		18.4 mm		80 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.