Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W400FT70ZA6T	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAT064MAR-1K11AA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAK240MAV-1AE11ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm			2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDHAK1T9MCH-1AN1ZABYY	Micron Technology	FLASH								CMOS																																														12
MTFDDAT240MAV-2AH1ZAA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W256GL7AZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm		BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M45PE40-VMP6	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			524288 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	R-XDSO-N8	3.6 V	1 mm	33 MHz	5 mm	Not Qualified		4194304 bit	2.7 V				30	235	NOR TYPE		6 mm			2.7
RD48F3000M0YFC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-30 Cel	64	NO			BOTTOM	R-PBGA-B107					Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
MTFDDAT480MAV-2AE11ACYY	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W064FB6AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm		BOTTOM	67108864 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	3
M29W640GT7ANB6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAK480MAV-2AH1ZAC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
MTFDDAK128MAM-1K2	Micron Technology	FLASH								CMOS																																							NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W320DT80N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm		TOP	33554432 bit	2.5 V						NOR TYPE		18.4 mm		80 ns	3
M29F800FB5AM6F2	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44	5.5 V	3 mm		12.6 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W160EB7AN6	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W640GL90ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		90 ns	3
N28H00CB03E8D51E	Micron Technology	FLASH
MTFDHBE1T6TDG-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			1759218604441 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		1.6TX8	1.6T	0 Cel					UNSPECIFIED	R-XXMA-N							14073748835532 bit							TLC NAND TYPE
MTFDDAA064MAM-1J1AA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W128GL70N3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified		131072 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W800FB70N6SE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
M29W064FT60ZA6E	Micron Technology
M58BW016FB8ZA3F	Micron Technology	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		2K,16K	40 mA	524288 words		NO	2.5/3.3,3/3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80					Not Qualified	BOTTOM	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		NO
MTFDDAV480MAV-1AE11ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm			4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK960MAV-1AH12ACYY	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
M29W400FT55N6SE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm		TOP	4194304 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
MTFDDAT240MAV-1AE1ZAB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAT128MAM	Micron Technology	FLASH								CMOS																																							NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
M29W640GL90ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		90 ns	3
M29F200FB55M3T	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44					Not Qualified	BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAA128MAM-1J12	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAK480MAV-1AH1ZAC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
M29W800FB55ZA6T	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
M29F400FB5AN6T2	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29F400FT5AM62	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44	5.5 V	3 mm		12.6 mm	Not Qualified	TOP	4194304 bit	4.5 V				30	235	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W064FT70ZB3F	Micron Technology	FLASH																																																						3
M58WR064KB7AZQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B88					Not Qualified	BOTTOM	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29W640GL6ANA3F	Micron Technology	FLASH																																																						3
MTFDDAK480MAV-1AE12AB	Micron Technology	FLASH								CMOS																																							NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
MTFDDAT120MAV-1AH1ZAB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W640GH6ANB3E	Micron Technology	FLASH																																																						3
RD48F4400L0YDQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K		33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	Tin/Lead (Sn/Pb)		BOTTOM	R-PBGA-B88					Not Qualified	BOTTOM/TOP	536870912 bit			4	e0			NOR TYPE			YES	85 ns		NO
MTFDDAA064MAM-1J2	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MT8F132M-7B	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			1048576 words				32	MICROELECTRONIC ASSEMBLY							1MX32	1M						SINGLE	R-XSMA-N80					Not Qualified		33554432 bit											70 ns	5
MTFDDAK480MBP-2AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7.2 mm		69.85 mm			4123168604160 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm			5
MTFDDAK960MAV-2AE1ZAB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
M29W640GH90ZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		90 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.