Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F160FT5AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48						Not Qualified			TOP	16777216 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M45PE10-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	131072 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	23 ms	SPI		1048576 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	6 mm			2.7
M29F200FT55N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G48						Not Qualified			TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT128MAM-1J2	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDDAK960MAV-1AE12ACYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP															UPPER		R-XUUC-N22		7 mm			69.85 mm												MLC NAND TYPE		100.5 mm			3.3
MTFDDAK120MAV-1AE1ZAA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					5
MTFDDAT256MAM	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29DW256G70N1F	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	DUAL		R-PDSO-G56						Not Qualified			BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAC064MAM-1K12AC	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					5
MTFDDAT240MAV-2AH12ZZYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		240GX8	240G	0 Cel					SINGLE		R-XSMA-N52	3.46 V	3.75 mm			29.85 mm					2061584302080 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29F800FB5AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48						Not Qualified			BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT120MAV-2AE11AAYY	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29W640GH90ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		90 ns	3
M29W640GB6ANA3F	Micron Technology	FLASH																																																											3
MTFDDAA050MAR-1K12	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
RD48F5000M0YTC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-30 Cel	256	NO			BOTTOM		R-PBGA-B107						Not Qualified			TOP	536870912 bit			16				NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GL6AZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm					67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
MTFDDAA128MAM-1J21AC	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29F200FT5AM6T2	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44	5.5 V	3 mm			12.6 mm	Not Qualified			TOP	2097152 bit	4.5 V						NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W128GSH70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56						Not Qualified				134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAK200MAR-1K1AB	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					5
M29W256GH70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified	.00007 ms		BOTTOM/TOP	268435456 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	20 mm	YES	70 ns	3	YES
MTFDDAT480MAV-2AE1ZAA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29W320EB70ZS6	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAA512MAM-1K22	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29W400FT7AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM		R-PBGA-B48						Not Qualified			TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAT256MAM-1J1AA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDJAL3T2MBS-2AN16ABYY	Micron Technology	FLASH																																																						SLC NAND TYPE					3.3
MTFDHBE800TDG-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			858993459200 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		800GX8	800G	0 Cel					UNSPECIFIED		R-XXMA-N										6871947673600 bit							TLC NAND TYPE
M29W320DB80ZE3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm					33554432 bit	2.7 V								8 mm		80 ns	3
MTFDDAA128MAM-1K11AA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29DW323DB7AN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm					33554432 bit	2.7 V								18.4 mm		70 ns	3
MTFDDAK050MAR-1K1	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					5
M29W640GB60NB3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		60 ns	3
MTFDHBE7T6TDF-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			8444249301319 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		7.68TX8	7.68T	0 Cel					UNSPECIFIED		R-XXMA-N										67553994410557 bit							TLC NAND TYPE
MTFDDAV240MAV-1AE12AAYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M45PE40-VMP6TP	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	262144 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI		2097152 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm			2.7
MTFDDAT120MAV-1AE12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm					1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTCF004A-XXX	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			16	MICROELECTRONIC ASSEMBLY						60 Cel		2MX16	2M	0 Cel					UNSPECIFIED		X-XXMA-X50	3.465 V					Not Qualified				33554432 bit	3.135 V	CAN ALSO OPERATE WITH 5V SUPPLY					NOR TYPE					3.3
RD48F3000W0YUQ0	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES			BOTTOM		R-PBGA-B88						Not Qualified			TOP	134217728 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
MTFDDAK240MAV-2AH1ZAC	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					5
MTFDDAT128MAR-1J11AA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
M29W800FB7AN3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		512KX16	512K	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
MTFDDAK960MAV-1AE11ACYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP															UPPER		R-XUUC-N22		7 mm			69.85 mm												MLC NAND TYPE		100.5 mm			3.3
M29W400FT7AZA6E	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM		R-PBGA-B48						Not Qualified			TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
RD48F4000L0YBQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K		16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES			BOTTOM		R-PBGA-B88						Not Qualified			BOTTOM	268435456 bit			4				NOR TYPE			YES	85 ns		NO
MTFDDAA050MAR-1K12AA	Micron Technology	FLASH								CMOS																																														MLC NAND TYPE					3.3
MTFDDAT256MAY-1AH12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		256GX8	256G	0 Cel					DUAL		R-XDMA-N52	3.46 V	3.75 mm			29.85 mm					2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.