Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAK480MAV-1AE1ZZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTSD256AHC6MS-1WT	Micron Technology	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			274877906944 words				8	UNCASED CHIP					85 Cel		256GX8	256G	-25 Cel					UPPER	R-XUUC-N									2199023255552 bit							NOR TYPE
M45PE40-VMW6T	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			524288 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G8		3.6 V	2.03 mm	33 MHz	5.25 mm	Not Qualified			4194304 bit	2.7 V			e0			NOR TYPE		5.3 mm			2.7
MTFDHBA800TDG-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			858993459200 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		800GX8	800G	0 Cel					UNSPECIFIED	R-XXMA-N									6871947673600 bit							TLC NAND TYPE
MTFDDAT128MAM1J112AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29F800FT5AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W800FB70N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
PH28F640W18BE60	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B56		1.95 V	1 mm		7.7 mm	Not Qualified		BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE		9 mm		60 ns	1.8
MTFDDAK480MAV-1AH12ACYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAV256MAY-1AH12AAYY	Micron Technology	FLASH MODULE	COMMERCIAL	75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					DUAL	R-XDMA-N75		3.46 V	3.58 mm		22 mm				2199023255552 bit	3.14 V						MLC NAND TYPE		80 mm			3.3
MTFDDAA256MAM-1J22AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W128GH7AN6F	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	.00007 ms		131072 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAT064MAY-1AH12AAYY	Micron Technology	FLASH MODULE	INDUSTRIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY					85 Cel	3-STATE	64GX8	64G	-40 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm		29.85 mm				549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29F200FT55M3E2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm		12.6 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29DW128F6ANF6T	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	DUAL	R-PDSO-G56						Not Qualified		BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
M29F400FT55N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAA256MAM-1J1AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAT256MAY-1AH1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm		29.85 mm				2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29F400FT55M3E2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm		12.6 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
RC28F800C3BD70	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		512KX16	512K	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.00002 Amp	13 mm	YES	70 ns	3	NO
M29W400FB5AZA3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm			BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
MTFDDAT480MAV-2AE11AAYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W640GT6ANA3F	Micron Technology	FLASH																																																								3
RC28F320J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			33554432 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
MTFDDAK100MAR-1J1AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAK240MAV-2AE12AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDHBA400TDG-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			429496729600 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		400GX8	400G	0 Cel					UNSPECIFIED	R-XXMA-N									3435973836800 bit							TLC NAND TYPE
MTFDDAT512MAY-1AE1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm		29.85 mm				4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
RC28F320J3F75A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified			33554432 bit	2.7 V		4/8	e0	30	235	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
M29W320DB80N6	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			BOTTOM	33554432 bit	2.5 V						NOR TYPE		18.4 mm		80 ns	3
MTFDHBA800TDG-1AW42ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			858993459200 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		800GX8	800G	0 Cel					UNSPECIFIED	R-XXMA-N									6871947673600 bit							TLC NAND TYPE
M29W160FT80ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		1MX16	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm			TOP	16777216 bit	2.5 V	TOP BOOT BLOCK		e1			NOR TYPE		8 mm		80 ns	3
RD48F4000M0YWC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	128	NO			BOTTOM	R-PBGA-B107						Not Qualified		TOP	268435456 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
MTFDDAC064MAM-1J2	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		64GX8	64G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	9.7 mm		69.85 mm				549755813888 bit	4.5 V						MLC NAND TYPE		100.2 mm			5
MTFDDAK480MAV-2AH11ABYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAT120MAV-1AE12AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
RC28F640P33BF60	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		8 mm			BOTTOM	67108864 bit	2.3 V						NOR TYPE		10 mm		60 ns	3
RD48F3000M0YTC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-30 Cel	64	NO			BOTTOM	R-PBGA-B107						Not Qualified		TOP	134217728 bit			16				NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W128GSH70ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified			134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAT240MAV-1AE11ZZ	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29F160FB5AM6F2	Micron Technology	FLASH																																																								5
M29W640GL7ANB3E	Micron Technology	FLASH																																																								3
M29F800FB5AN62	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29F160FB55M3T2	Micron Technology	FLASH																																																								5
M29W640GB7ANB6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W256GH7AZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAA256MAM-1K22AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W128GH70ZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel		8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.