Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDCAE004SAF-1B1IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	4294967296 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		4GX8	4G	-40 Cel					UNSPECIFIED		R-XXMA-X		5.25 V	9.7 mm			26.6 mm					34359738368 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAT120MAV-2AH11ACYY	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
GE28F320C3BC70	Micron Technology	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM		R-PBGA-B47		3.6 V					Not Qualified			BOTTOM	33554432 bit	2.7 V						NOR TYPE	.000005 Amp		YES	70 ns	3	NO
M29W160FT80N3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		1MX16	1M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				TOP	16777216 bit	2.5 V	TOP BOOT BLOCK		e3			NOR TYPE		18.4 mm		80 ns	3
MTFDDAT512MAY-1AE1ZZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		512GX8	512G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm			29.85 mm					4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W256GH60ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
MTFDCAE004SAF-1B2	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	4294967296 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		4GX8	4G	0 Cel					UNSPECIFIED		R-XXMA-X		5.25 V	9.7 mm			26.6 mm					34359738368 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAK240MAV-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK120MAV-1AE11AC	Micron Technology	FLASH								CMOS																																													NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
MTFDDAK100MAN-1S1AA	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					5
M29W400FB55ZA3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		256KX16	256K	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm				BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
GE28F320C3TC70	Micron Technology	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM		R-PBGA-B47		3.6 V					Not Qualified			TOP	33554432 bit	2.7 V						NOR TYPE	.00002 Amp		YES	70 ns	3	NO
M29DW323DT7AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					33554432 bit	2.7 V								18.4 mm		70 ns	3
M29W800FT5AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			TOP	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
MTFDDAA256MAM-1J11AA	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M29W400FT55N6ST	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				TOP	4194304 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
M29W400FT5AZA6T	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm			6 mm	Not Qualified			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE	.0001 Amp	8 mm	YES	55 ns	3	YES
MTFDDAT240MAV-1AH12AAYY	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M45PE10-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	131072 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	23 ms	SPI		1048576 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	6 mm			2.7
MTFDDAK256MAM-1J2	Micron Technology	FLASH								CMOS																																													NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W640GH7AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAV240MAV-1AE11ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W320FB80ZASE	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			BOTTOM	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M29F800FT5AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48							Not Qualified			TOP	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT480MAV-2AE12ACYY	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
MTFDDAT480MAV-1AE11AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
RD48F3000M0YWC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-30 Cel	64	NO			BOTTOM		R-PBGA-B107							Not Qualified			TOP	134217728 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GH90ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		90 ns	3
M58WR064KB70ZB6F	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B56		2 V	1 mm			7.7 mm	Not Qualified			BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.00005 Amp	9 mm	YES	70 ns	1.8	NO
RC28F512M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V		16/32	e0			NOR TYPE	.000225 Amp	13 mm	YES	100 ns	3	YES
MTFDDAA512MAM-1J11AA	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M29W160FT80N3E6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48							Not Qualified			TOP	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M29W256GSH70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm					268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAK128SBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				137438953472 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		128GX8	128G	-40 Cel					SINGLE		R-XSMA-X22		5.5 V	7.2 mm			69.85 mm					1099511627776 bit	4.5 V	LENGTH_MAX			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		100.45 mm			5
M29W640GH70NB3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	125 Cel		4MX16	4M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAT256MAM1J11AC	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
PF38F4050M0Y0QF	Micron Technology	MEMORY CIRCUIT
PF38F4060M0Y4DE	Micron Technology	MEMORY CIRCUIT
PF38F6070M0Q1CE	Micron Technology	MEMORY CIRCUIT
PF38F3050M0Y3DH	Micron Technology	MEMORY CIRCUIT
M36P0R9070N1ZS	Micron Technology	MEMORY CIRCUIT
PF38F3040M0Y0QE	Micron Technology	MEMORY CIRCUIT
PF38F3040M0Y3DE	Micron Technology	MEMORY CIRCUIT
PF38F4050M0Y3CE	Micron Technology	MEMORY CIRCUIT
PF38F5070M0Y3DF	Micron Technology	MEMORY CIRCUIT
PF38F6070M0Y4DE	Micron Technology	MEMORY CIRCUIT
PF38F4060M0Y2DG	Micron Technology	MEMORY CIRCUIT
PF38F3050M0Y0QF	Micron Technology	MEMORY CIRCUIT

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.