Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDHAK800MCG-1AN1ZABYY	Micron Technology	FLASH								CMOS																																															12
M29W640GL7ANB6F	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK	4/8	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDJAK200MBW-2AN1ZABYY	Micron Technology	FLASH																																																							3.3
RC28F640J3D75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	64	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified		67108864 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC48F1000W0YU00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B44					Not Qualified	TOP	33554432 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
M29W160FT80NSE	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48					Not Qualified	TOP	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M29W640GH7AZA3F	Micron Technology	FLASH																																																							3
MTFDDAT480MAV-1AE12AAYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP															UPPER	R-XUUC-N52		3.7 mm		29.85 mm										MLC NAND TYPE		50.8 mm			3.3
CT1000P2SSD8	Micron Technology
M29W800FT55N6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48					Not Qualified	TOP	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
M29W128GSL70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56					Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAA064MAM-1J21AA	Micron Technology	FLASH								CMOS																																								NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
M29W400FB55N6SE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
MTFDDAK960MAV-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	960GX8	960G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm			8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W320DT80ZE6T	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm		TOP	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
JR28F032M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
M29F200FB5AN62	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MTFDDAV120MAV-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAA064MAM-1J22AC	Micron Technology	FLASH								CMOS																																								NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
MTFDDAA100MAR-1K1AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAK512MAY-1AE1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			549755813888 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		512GX8	512G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm		69.85 mm			4398046511104 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAA512MAM-1K1AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAK120MAV-1AH1ZAC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29DW127G60NF6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K,256K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
M29W256GSL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm			268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAT064MAM1J12AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAK960MAV-1AH11ZZYY	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29F160FT55N3S	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48					Not Qualified	TOP	16777216 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAA200MAR-1K1AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29W400FB70ZA6T	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAA128MAM-1K22AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAA512MAM-1K2	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
SMC01GCFC6	Micron Technology	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	UNCASED CHIP						85 Cel		1GX8	1G	-40 Cel					UPPER	R-XUUC-N50	3.63 V	4.1 mm		36.4 mm			8589934592 bit	2.97 V	CAN ALSO OPERATE WITH 5V SUPPLY			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		42.8 mm			3.3
M29W064FT70ZB6F	Micron Technology	FLASH																																																							3
MTFDDAK240MAV-1AH12AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W320DT7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAT128MAM-1J12AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAT128MAM1J11	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29F200FB5AN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48					Not Qualified	BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W064FB60ZA3E	Micron Technology																																		TIN SILVER COPPER														e1	30	260
MTFDDAK120MAV-1AE12ACYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP															UPPER	R-XUUC-N22		7 mm		69.85 mm								NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.5 mm			3.3
M29DW256G70NF1F	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	32K,128K	20 mA	16777216 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		20	.5 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		BOTTOM/TOP	268435456 bit	2.7 V		8				NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAV480MAV-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm			4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W320DB80ZE6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm		BOTTOM	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
MTFDDAT256MAM-1K1AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAA128MAM-1J11AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
RD48F3000L0YUQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B88					Not Qualified	TOP	134217728 bit							NOR TYPE	.00007 Amp		YES	85 ns		NO
M29F800FB55ZA3F-2	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.