Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAT240MAV-1AE11ZZYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N52			3.7 mm	29.85 mm										MLC NAND TYPE		50.8 mm			3.3
MTFDDAK120MAV-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W640GT7AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		TOP	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		70 ns	3
M29F400FT5AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48					Not Qualified	TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAA512MAM-1J2AA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
PZ28F064M29EWBX	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
MTFDHAK960MCH-1AN1ZABYY	Micron Technology	FLASH								CMOS																																														12
M29W256GH60N1F	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
RD48F4000M0YBC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-30 Cel	128	NO			BOTTOM	R-PBGA-B107					Not Qualified	BOTTOM	268435456 bit			16				NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GH6AZF6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
MTFDDAK120MBD-2AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel		120GX8	120G	-40 Cel					SINGLE	R-XSMA-N22		5.5 V	7.2 mm	69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
RD48F3000P0ZBQEA	Micron Technology
MTFDJAK400MBT-2AN16ABYY	Micron Technology	FLASH																																																						3.3
M29W320DT80N6T	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm		TOP	33554432 bit	2.5 V						NOR TYPE		18.4 mm		80 ns	3
M29W160FB70N3E6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48					Not Qualified	BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDCAE008SAF-1D1	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	8589934592 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		8GX8	8G	0 Cel					UNSPECIFIED	R-XXMA-X		5.25 V	9.7 mm	26.6 mm			68719476736 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29W064FT70ZA3E	Micron Technology
M29W320DB80N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	125 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			33554432 bit	2.7 V								18.4 mm		80 ns	3
M29W064FT7AZB6E	Micron Technology	FLASH																																																						3
M29W800FT70ZA6SE	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm		TOP	8388608 bit	3 V	TOP BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDDAA512MAM-1J12AA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAK120MAV-1AE12ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W320DB80N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	125 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			33554432 bit	2.7 V								18.4 mm		80 ns	3
M29W640GT6AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm		TOP	67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
MTFDDAT240MAV-1AH1ZAA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAA400MAR-1J12AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MQAT010A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				10485760 words	3.3			8	MICROELECTRONIC ASSEMBLY					60 Cel		10MX8	10M	0 Cel					UNSPECIFIED	X-XXMA-X50		3.6 V			Not Qualified		83886080 bit	3 V	ALSO WORKS WITH 5V VCC					NOR TYPE					3
MTFDDAT480MAV-1AH1ZAB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W400FB90ZA6E	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
M29F800FB5AZA6T-2	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W320FB70N3F6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	DUAL	R-PDSO-G48					Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W320DT80N3	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	125 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			33554432 bit	2.7 V								18.4 mm		80 ns	3
MTFDDAT256MAR-1K11	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
RD48F4000M0YTB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-30 Cel	128	NO			BOTTOM	R-PBGA-B105					Not Qualified	TOP	268435456 bit			16				NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GB6ANA6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm		BOTTOM	67108864 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	3
MTFDDAK240MAV-1AE11ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm			2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W640GL7ANB3F	Micron Technology	FLASH																																																						3
JR28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified		67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
M29W800FB55ZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
M58BW016FT7ZA3FF	Micron Technology	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	3			32	GRID ARRAY, LOW PROFILE				1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.6 mm	10 mm		TOP	16777216 bit	2.7 V						NOR TYPE		12 mm		70 ns	3
M29W160ET7AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAA100MAR-1J1AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29F200FT55M6E	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44					Not Qualified	TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK480MAV-2AE12ABYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm			4123168604160 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W160EB80ZS3SE	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified	BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAK1T9TDS-1AW1ZAB	Micron Technology	FLASH MODULE
M29W800FT7AZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B48	1	3.6 V	1.2 mm	6 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W320DT80ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			33554432 bit	2.7 V								8 mm		80 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.