Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAT120MAV-2AE1ZAB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W256GH7AZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M58WR064KT70ZAQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B88					Not Qualified	TOP	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MT8F832M-9S	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			8388608 words				32	MICROELECTRONIC ASSEMBLY						8MX32	8M						SINGLE	R-XSMA-N80					Not Qualified		268435456 bit											90 ns	5
MT8LSFT6400H-133	Micron Technology
RD48F4000P0XBQ0	Micron Technology	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM	R-PBGA-B80	3.6 V	1 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000195 Amp	11 mm	YES	85 ns	3	NO
M58WR032KT7AZB6E	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B56					Not Qualified	TOP	33554432 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29F400FB5AM6E	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44					Not Qualified	BOTTOM	4194304 bit					30	260	NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK1T9TDS-1AW16AB	Micron Technology	FLASH MODULE
M29F160FT55N3T2	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W128GL60ZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
MTFDDAK240MAV-2AH12ZZ	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
RD48F6000M0YTB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	512	NO			BOTTOM	R-PBGA-B105					Not Qualified	TOP	1073741824 bit			16				NOR TYPE	.000005 Amp		YES	96 ns		NO
M29W160ET80ZS3S	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel	1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm		TOP	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
RC28F800C3TD70	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	512KX16	512K	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.00002 Amp	13 mm	YES	70 ns	3	NO
PH28F320W30TC70	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	2097152 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B56					Not Qualified	TOP	33554432 bit			4				NOR TYPE	.000021 Amp		YES	70 ns		NO
MTFDDAT120MAV-1AH11ACYY	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W800FB90ZA6F	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
M29W640GH90ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm			67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		90 ns	3
M29F400FT55N32	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MTFDHAL3T2MCE-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS		UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel	3200GX8	3.2T	0 Cel					UNSPECIFIED	R-XXMA-X	3.564 V							3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDDAT064MAY-1AH12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel	64GX8	64G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm		29.85 mm			549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W320DB80ZE6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm		BOTTOM	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
M29W320DT80ZE6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm		TOP	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
MTFDCAE008SAF-1C3IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	8589934592 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel	8GX8	8G	-40 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm		26.6 mm			68719476736 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
RD48F3000M0YTB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	64	NO			BOTTOM	R-PBGA-B105					Not Qualified	TOP	134217728 bit			16				NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W800FT7AN6SE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel	512KX16	512K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
PC48F4400P0TB0E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM/TOP	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00042 Amp	13 mm	YES	95 ns	2.7	NO
MTFDHAL7T6TDP-2AT1ZABYY	Micron Technology	FLASH
M29W640GL70NB3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	125 Cel	4MX16	4M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified		67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W640GT6ANA6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel	4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm		TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	3
M29W640GH6ANA3E	Micron Technology	FLASH																																																					3
M29F400FT55N6S	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48					Not Qualified	TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29F200FT5AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48					Not Qualified	TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
GE28F640W30TD85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B56					Not Qualified	TOP	67108864 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
MTFDDAK120MAV-1AH11ZZYY	Micron Technology	FLASH								CMOS																																						NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M45PE10-VMP6T	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel	128KX8	128K	-40 Cel					DUAL	R-XDSO-N8	3.6 V	1 mm	33 MHz	5 mm	Not Qualified		1048576 bit	2.7 V				30	235	NOR TYPE		6 mm			2.7
MTFDDAK128MAZ-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	128GX8	128G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm		69.85 mm			1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W640GL60ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm			67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		60 ns	3
MTFDJAL3T8MBT-2AN16ABYY	Micron Technology	FLASH																																																					3.3
M29W256GL70ZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel	16MX16	16M	0 Cel	256	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAT128MAZ-1AE12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel	128GX8	128G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm		29.85 mm			1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAT120MAV-1AE	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W160ET80ZA3ST	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel	1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm		TOP	16777216 bit	2.7 V						NOR TYPE		8 mm		70 ns	3
M58BW016FB8ZA3FF	Micron Technology	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	3			32	GRID ARRAY, LOW PROFILE				1 mm	125 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80	3.6 V	1.6 mm		10 mm		BOTTOM	16777216 bit	2.7 V						NOR TYPE		12 mm		80 ns	3
RC28F00AM29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm	Not Qualified		1073741824 bit	2.7 V		16/32	e0			NOR TYPE	.00024 Amp	13 mm	YES	100 ns	2.7	YES
N28H00DB03JDK32E	Micron Technology	FLASH
PH28F256L18T85	Micron Technology	FLASH	OTHER	79	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	27 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA79,7X13,30	8	Flash Memories	.75 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B79	2 V	1 mm		9 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.00011 Amp	11 mm	YES	85 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.