Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAA128MAM-1K22AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
PH28F640W30TD85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B56				Not Qualified	TOP	67108864 bit			4				NOR TYPE	.00005 Amp		YES	85 ns		NO
MTFDDAK240MBP-1AN1ZAB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
M39LNR9A90E1P5HF	Micron Technology	FLASH																																																					1.8
M29W128GL60ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29F400FB55M6T	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44				Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAC064MAM-1J22AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
RC48F1000W0YC00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B44				Not Qualified	BOTTOM	33554432 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
M29W400DB55N3	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	3	YES
MTFDDAK120MAV-2AE11ZZYY	Micron Technology	FLASH								CMOS																																						NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W320DB70N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
PH28F320C3BD90	Micron Technology	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B47	3.6 V	1 mm	6.964 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	7.286 mm	YES	90 ns	3	NO
GE28F640W30BD85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B56				Not Qualified	BOTTOM	67108864 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
MTFDHBA800TDG-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			858993459200 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		800GX8	800G	0 Cel					UNSPECIFIED	R-XXMA-N						6871947673600 bit							TLC NAND TYPE
M29F200FT5AN62	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	12 mm	Not Qualified	TOP	2097152 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
JR28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified		67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
M29F400FT55M6F	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44				Not Qualified	TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK512MAY-1AE1ZACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			549755813888 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm			4398046511104 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
PH28F640W30TD70	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B56				Not Qualified	TOP	67108864 bit			4				NOR TYPE	.000005 Amp		YES	70 ns		NO
RD48F1000W0YCQ0	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B88				Not Qualified	BOTTOM	33554432 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
M29W128GL60ZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel		8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W160FB80N3E6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48				Not Qualified	BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAK128MAZ-1AE12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm			1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAK480MAV-1AE11ACHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W160FT70ZA3E6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	16777216 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAA100MAR-1K11AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAC064MAM-1K21AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
M58BW016FT8ZA3FF	Micron Technology	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	3			32	GRID ARRAY, LOW PROFILE				1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80	3.6 V	1.6 mm	10 mm		TOP	16777216 bit	2.7 V						NOR TYPE		12 mm		80 ns	3
MTFDDAT256MAR-1K1	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29W128GH60ZS1F	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel		8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W800FT90ZA6F	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48				Not Qualified	TOP	8388608 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
M29W160FT70N3F6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48				Not Qualified	TOP	16777216 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAC064MAM-1K11AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAK128MAZ-1AE12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm			1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W640GB7AZA3F	Micron Technology	FLASH																																																					3
M29W640GL6AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
RC28F160C3BA90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	90 ns	3	NO
RC28F128P33BF60	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	8 mm		BOTTOM	134217728 bit	2.3 V						NOR TYPE		10 mm		60 ns	3
M29W800FB70ZA6SE	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
M29W160ET80N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		1MX16	1M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm		TOP	16777216 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
MTFDDAT256MAM-1K2	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAK600MBP-1AN16AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAK480MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					515396075520 words	5			8	FLANGE MOUNT					70 Cel		480GX8	480G	0 Cel		NO			UNSPECIFIED	R-XXFM-X22	5.5 V	7 mm	69.85 mm			4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5	NO
M29F400FT5AM6F	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44				Not Qualified	TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
GE28F128W30TD70	Micron Technology	FLASH	INDUSTRIAL	60	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	8388608 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA60,9X10,30		Flash Memories	.75 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES			BOTTOM	R-PBGA-B60				Not Qualified	TOP	134217728 bit			4				NOR TYPE	.000005 Amp		YES	70 ns		NO
M29W400FB5AZA6SE	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm		BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
MTFDDAK960MAV-1AE11ABYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N22		7 mm	69.85 mm										MLC NAND TYPE		100.5 mm			3.3
M29W128GH60ZA3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.