Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAK032SBD-1AH12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				34359738368 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel		32GX8	32G	-40 Cel					SINGLE	R-XSMA-X22	5.5 V	7.2 mm	69.85 mm				274877906944 bit	4.5 V	LENGTH_MAX			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		100.45 mm			5
M29W160EB70ZS3SF	Micron Technology	FLASH																																																						3
MTFDDAK064MAY-1AH1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			68719476736 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		64GX8	64G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm				549755813888 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29F200FB55M6T	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44				Not Qualified		BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W400FT5AN3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
M29DW256G70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-40 Cel	8,126	YES		YES	DUAL	R-PDSO-G56				Not Qualified		BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W400DT70N3F	Micron Technology	FLASH																																																						3
M29W320EB90ZS1F	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			BOTTOM	33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
RC28F160C3TC90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	S-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.00002 Amp	13 mm	YES	90 ns	3	NO
MTFDDAA064MAM-1J1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED										MICROELECTRONIC ASSEMBLY														UNSPECIFIED	R-XXMA-X			54 mm											MLC NAND TYPE		78.5 mm			3.3
M29DW256G70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	32K,128K	10 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		16MX16	16M	-40 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDCAE002SAF-1D2	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	2147483648 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		2GX8	2G	0 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm	26.6 mm				17179869184 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29W256GH60N3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		16MX16	16M	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm	14 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	3
RD48F5000M0YTB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	256	NO			BOTTOM	R-PBGA-B105				Not Qualified		TOP	536870912 bit			16				NOR TYPE	.00003 Amp		YES	96 ns		NO
RD48F5000M0YWC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	256	NO			BOTTOM	R-PBGA-B107				Not Qualified		TOP	536870912 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
MT8LSFT6400H-13EXX	Micron Technology	FLASH MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS			8388608 words	3.3			64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel			GOLD		DUAL	R-XDMA-N144	3.6 V			Not Qualified	10 ms		536870912 bit	3 V			e4			NOR TYPE				5.4 ns	3.3
MTFDDAV120MAV-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W400FT55N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified		TOP	4194304 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES
M29W800FB7AZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDDAC064MAM-1K22AA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
MTFDCAE001SAF-1B3	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	1073741824 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		1GX8	1G	0 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm	26.6 mm				8589934592 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29W400FT55ZA3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm			TOP	4194304 bit	3 V	TOP BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
M29W064FB7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm			BOTTOM	67108864 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
M29W320DB7AN6	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W640GB60ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W256GH7AZS1E	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W256GL7AZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAT128MAZ-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm				1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAK240MAV-1AH11ZZ	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
M29W160EB7AZA6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm			BOTTOM	16777216 bit	2.7 V						NOR TYPE		8 mm		70 ns	3
MTFDDAT032MAM1J12AC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAK120MAV-1AE12ZZYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N22		7 mm	69.85 mm									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.5 mm			3.3
M29W160FT70N3E6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48				Not Qualified		TOP	16777216 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W064FB70N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
RC28F640P30B85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM	S-PBGA-B64				Not Qualified		BOTTOM	67108864 bit			4				NOR TYPE	.000035 Amp		YES	85 ns		NO
MTFDDAA128MAM-1J1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										MICROELECTRONIC ASSEMBLY														UNSPECIFIED	R-XXMA-N			54 mm											MLC NAND TYPE		78.2 mm			3.3
RC28F00BM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	134217728 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified			2147483648 bit	2.7 V		16/32	e0			NOR TYPE	.00048 Amp	13 mm	YES	100 ns	2.7	YES
MTFDDAK960MAV-1AE12ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	960GX8	960G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm				8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTCF008A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					8388608 words	3.3			8	MICROELECTRONIC ASSEMBLY					60 Cel		8MX8	8M	0 Cel					UNSPECIFIED	X-XXMA-X50	3.6 V			Not Qualified			67108864 bit	3 V	ALSO BE OPERATED WITH 4.5-5.5V SUPPLY					NOR TYPE					3
M29W160FT80ZA3F6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	R-PBGA-B48				Not Qualified		TOP	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAT128MAY-1AH12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm				1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W640GH6AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm				67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29F160FT5AN6S	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48				Not Qualified		TOP	16777216 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W400FB55ZA6SF	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
M29W160EB70ZS3	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			BOTTOM	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAK120MAV-2AE11AAYY	Micron Technology	FLASH								CMOS																																							NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W400FB5AN3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm			BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
M29W640GH70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.