Micron Technology Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M29F160FT5AN6T

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

AEC-Q100

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

1048576 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

YES

DUAL

R-PDSO-G48

Not Qualified

TOP

16777216 bit

NOR TYPE

.00012 Amp

YES

55 ns

YES

RD48F3000L0ZBQ0

Micron Technology

FLASH

OTHER

80

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,64K

51 mA

8388608 words

1.8

NO

1.8,2.5/3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-25 Cel

4,127

YES

TIN LEAD

BOTTOM

R-PBGA-B80

2 V

1.2 mm

8 mm

Not Qualified

BOTTOM

134217728 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

4

e0

NOR TYPE

.000005 Amp

10 mm

YES

85 ns

1.8

NO

M29DW256G7ANF6F

Micron Technology

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16777216 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

268435456 bit

2.7 V

e3

18.4 mm

70 ns

3

MTFDDAV240MAV-1AE11ACHA

Micron Technology

FLASH MODULE

COMMERCIAL

22

SMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

257698037760 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

240GX8

240G

0 Cel

SINGLE

R-XSMA-N22

5.5 V

7 mm

69.85 mm

2061584302080 bit

4.5 V

MLC NAND TYPE

100.45 mm

5

M29F800FT55M6E

Micron Technology

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

AEC-Q100

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

524288 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G44

Not Qualified

TOP

8388608 bit

NOR TYPE

.00012 Amp

YES

55 ns

YES

M29F400FT55M6T

Micron Technology

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

AEC-Q100

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G44

Not Qualified

TOP

4194304 bit

NOR TYPE

.00012 Amp

YES

55 ns

YES

M29W640GL70ZF3E

Micron Technology

FLASH

AUTOMOTIVE

64

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

10 mA

4194304 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

125 Cel

4MX16

4M

-40 Cel

128

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B64

3.6 V

1.2 mm

10 mm

Not Qualified

TOP

67108864 bit

2.7 V

TOP BOOT BLOCK

4/8

e1

NOR TYPE

.0001 Amp

13 mm

YES

70 ns

3

YES

M29W640GT7ANA6F

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

2.7 V

4/8

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M58WR016KT7AZB6F

Micron Technology

FLASH

INDUSTRIAL

56

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

70 mA

1048576 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA56,7X8,30

Flash Memories

.75 mm

85 Cel

1MX16

1M

-40 Cel

8,31

YES

BOTTOM

R-PBGA-B56

Not Qualified

TOP

16777216 bit

4

NOR TYPE

.00005 Amp

YES

70 ns

NO

MTFDDAT120MAV-1AE12ABYY

Micron Technology

FLASH

COMMERCIAL

52

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

UNCASED CHIP

UPPER

R-XUUC-N52

3.7 mm

29.85 mm

MLC NAND TYPE

50.8 mm

3.3

M29W256GL60N3E

Micron Technology

FLASH

AUTOMOTIVE

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16777216 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

125 Cel

16MX16

16M

-40 Cel

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

BOTTOM/TOP

268435456 bit

2.7 V

NOR TYPE

18.4 mm

60 ns

3

MTFDDAK480MAV-2AH12ABYY

Micron Technology

FLASH MODULE

22

SMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

515396075520 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

480GX8

480G

0 Cel

SINGLE

R-XSMA-N22

5.5 V

7 mm

69.85 mm

4123168604160 bit

4.5 V

MLC NAND TYPE

100.5 mm

5

PH28F320C3TD90

Micron Technology

FLASH

INDUSTRIAL

47

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

18 mA

2097152 words

3

NO

1.8/3.3,3/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA46,6X8,30

Flash Memories

.75 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

BOTTOM

R-PBGA-B47

3.6 V

1 mm

6.964 mm

Not Qualified

TOP

33554432 bit

2.7 V

USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK

NOR TYPE

.00002 Amp

7.286 mm

YES

90 ns

3

NO

MTCF004A

Micron Technology

FLASH CARD

COMMERCIAL

50

UNSPECIFIED

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

4194304 words

3.3

8

MICROELECTRONIC ASSEMBLY

60 Cel

4MX8

4M

0 Cel

UNSPECIFIED

X-XXMA-X50

3.6 V

Not Qualified

33554432 bit

3 V

ALSO BE OPERATED WITH 4.5-5.5V SUPPLY

NOR TYPE

3

MTFDHBA400TDG-1AW4ZABYY

Micron Technology

FLASH MODULE

XMA

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

429496729600 words

8

MICROELECTRONIC ASSEMBLY

70 Cel

400GX8

400G

0 Cel

UNSPECIFIED

R-XXMA-N

3435973836800 bit

TLC NAND TYPE

M29W320DT70N3

Micron Technology

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

2097152 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

2MX16

2M

-40 Cel

1,2,1,63

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

33554432 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W320DT70ZE3F

Micron Technology

FLASH

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

2097152 words

3

YES

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

125 Cel

2MX16

2M

-40 Cel

1,2,1,63

YES

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

TOP

33554432 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

M29F200FT5AM6E

Micron Technology

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

AEC-Q100

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

YES

DUAL

R-PDSO-G44

Not Qualified

TOP

2097152 bit

NOR TYPE

.00012 Amp

YES

55 ns

YES

MT8LSFT6400H-133XX

Micron Technology

FLASH MODULE

COMMERCIAL

144

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

PARALLEL

SYNCHRONOUS

8388608 words

3.3

64

MICROELECTRONIC ASSEMBLY

70 Cel

8MX64

8M

0 Cel

GOLD

DUAL

R-XDMA-N144

3.6 V

Not Qualified

10 ms

536870912 bit

3 V

e4

NOR TYPE

5.4 ns

3.3

MTFDDAK960MAV-2AH12ACYY

Micron Technology

FLASH

CMOS

MLC NAND TYPE

5

M29W400FT5AZA3SF

Micron Technology

FLASH

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

8

.8 mm

125 Cel

256KX16

256K

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

NOR TYPE

8 mm

55 ns

3

M29W800FT70N3SF

Micron Technology

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

125 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

TOP

8388608 bit

3 V

TOP BOOT BLOCK

NOR TYPE

18.4 mm

70 ns

3

MTFDDAT120MAV-1AE12ZZYY

Micron Technology

FLASH

COMMERCIAL

52

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

UNCASED CHIP

UPPER

R-XUUC-N52

3.7 mm

29.85 mm

MLC NAND TYPE

50.8 mm

3.3

MTFDHBE6T4TDG-1AW1ZABYY

Micron Technology

FLASH MODULE

XMA

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

7036874417766 words

8

MICROELECTRONIC ASSEMBLY

70 Cel

6.4TX8

6.4T

0 Cel

UNSPECIFIED

R-XXMA-N

56294995342131 bit

TLC NAND TYPE

M29W400FT90N6T

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

262144 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G48

Not Qualified

TOP

4194304 bit

NOR TYPE

.0001 Amp

YES

90 ns

YES

M29W640GB70NB3F

Micron Technology

FLASH

AUTOMOTIVE

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

10 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

125 Cel

4MX16

4M

-40 Cel

8,127

YES

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

4/8

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

MTFDDAT240MAV-1AE11ABHA

Micron Technology

FLASH MODULE

COMMERCIAL

22

SMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

257698037760 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

240GX8

240G

0 Cel

SINGLE

R-XSMA-N22

5.5 V

7 mm

69.85 mm

2061584302080 bit

4.5 V

MLC NAND TYPE

100.45 mm

5

M58WR016KB7AZB6F

Micron Technology

FLASH

INDUSTRIAL

56

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

70 mA

1048576 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA56,7X8,30

Flash Memories

.75 mm

85 Cel

1MX16

1M

-40 Cel

8,31

YES

BOTTOM

R-PBGA-B56

Not Qualified

BOTTOM

16777216 bit

4

NOR TYPE

.00005 Amp

YES

70 ns

NO

MTFDDAC064MAM-1K2AB

Micron Technology

FLASH

CMOS

MLC NAND TYPE

5

MTFDDAA400MAR-1J12AA

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

M29W160FB7AZA6E6

Micron Technology

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

10 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

BOTTOM BOOT BLOCK

e1

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

MTFDCAE004SAF-1D1

Micron Technology

FLASH MODULE

COMMERCIAL

XMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

SERIAL

ASYNCHRONOUS

120 mA

4294967296 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

4GX8

4G

0 Cel

UNSPECIFIED

R-XXMA-X

5.25 V

9.7 mm

26.6 mm

34359738368 bit

4.75 V

SLC NAND TYPE

.06 Amp

36.9 mm

5

M29W640GB7AN6E

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

85 Cel

4MX16

4M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

BOTTOM

67108864 bit

2.7 V

e3

NOR TYPE

18.4 mm

70 ns

3

M29W400FT7AN6T

Micron Technology

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

262144 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G48

Not Qualified

TOP

4194304 bit

NOR TYPE

.0001 Amp

YES

70 ns

YES

M29F200FT55N3S

Micron Technology

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

AEC-Q100

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

YES

DUAL

R-PDSO-G48

Not Qualified

TOP

2097152 bit

NOR TYPE

.00012 Amp

YES

55 ns

YES

M29F160FT55N32

Micron Technology

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

30 mA

1048576 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

4.5 V

NOR TYPE

.00012 Amp

18.4 mm

YES

55 ns

5

YES

MTFDDAV1T0TDL-1AW12ABYY

Micron Technology

FLASH MODULE

XMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

1099511627776 words

8

MICROELECTRONIC ASSEMBLY

1TX8

1T

UNSPECIFIED

R-XXMA-X

8796093022208 bit

TLC NAND TYPE

MTFDDAT480MAV-1AE12ZYY

Micron Technology

FLASH MODULE

COMMERCIAL

22

SMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

515396075520 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

480GX8

480G

0 Cel

SINGLE

R-XSMA-N22

5.5 V

7 mm

69.85 mm

4123168604160 bit

4.5 V

MLC NAND TYPE

100.45 mm

5

MTFDDAT256MAY-1AH12AAYY

Micron Technology

FLASH MODULE

INDUSTRIAL

52

DIMM

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

274877906944 words

3.3

8

MICROELECTRONIC ASSEMBLY

85 Cel

3-STATE

256GX8

256G

-40 Cel

DUAL

R-XDMA-N52

3.46 V

3.75 mm

29.85 mm

2199023255552 bit

3.14 V

MLC NAND TYPE

50.8 mm

3.3

MTFDDAA100MAR-1J12

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

MTFDHAX1T2MCF-1AN1ZABYY

Micron Technology

FLASH MODULE

COMMERCIAL

1

CMOS

UNSPECIFIED

SYNCHRONOUS

3.3

8

MICROELECTRONIC ASSEMBLY

55 Cel

1200GX8

1.2T

0 Cel

UNSPECIFIED

R-XXMA-X

3.564 V

3.036 V

SOLID STATE DRIVE

NAND TYPE

MTFDDAT240MAV-2AH11ACYY

Micron Technology

FLASH

CMOS

MLC NAND TYPE

3.3

M29W256GL7AZA3F

Micron Technology

FLASH

AUTOMOTIVE

64

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16777216 words

3

16

GRID ARRAY, THIN PROFILE

8

1 mm

125 Cel

16MX16

16M

-40 Cel

BOTTOM

R-PBGA-B64

3.6 V

1.2 mm

10 mm

BOTTOM/TOP

268435456 bit

2.7 V

NOR TYPE

13 mm

70 ns

3

MTFDDAT256MAZ-1AE12ACYY

Micron Technology

FLASH MODULE

COMMERCIAL

52

DIMM

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

SERIAL

ASYNCHRONOUS

274877906944 words

3.3

8

MICROELECTRONIC ASSEMBLY

70 Cel

256GX8

256G

0 Cel

DUAL

R-XDMA-N52

3.46 V

3.75 mm

29.85 mm

2199023255552 bit

3.14 V

MLC NAND TYPE

50.8 mm

3.3

MTFDDAK240MAV-2AH11AC

Micron Technology

FLASH

CMOS

MLC NAND TYPE

5

MT8F432M-7B

Micron Technology

FLASH MODULE

80

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

4194304 words

32

MICROELECTRONIC ASSEMBLY

4MX32

4M

SINGLE

R-XSMA-N80

Not Qualified

134217728 bit

70 ns

5

M29W640GL70ZS6F

Micron Technology

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

20 mA

4194304 words

3

YES

3/3.3

16

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

4MX16

4M

-40 Cel

128

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B64

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

67108864 bit

2.7 V

TOP BOOT BLOCK

4/8

e1

NOR TYPE

.0001 Amp

13 mm

YES

70 ns

3

YES

RD48F5000M0YCC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

536870912 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.