Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F256G08AUCABJ3-10Z:A	Micron Technology	FLASH	COMMERCIAL	132			PLASTIC/EPOXY	YES		CMOS			PARALLEL		1M	50 mA			NO	1.8,3/3.3			BGA132,11X17,40		Flash Memories			70 Cel				0 Cel	32K	YES		YES									Not Qualified				274877906944 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F2G08ABAEAH4-ITX:ETR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm					2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm			3.3
MT29F2G08ABBEAHC-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm			10.5 mm	Not Qualified				2147483648 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F32G08CBACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm					34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F4G01ABAFD12-AAT:F	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	536870912 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2		10	1 mm	105 Cel	3-STATE	512MX8	512M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		4294967296 bit	2.7 V	CONFIGURABLE AS 4G X 1					SLC NAND TYPE	.00005 Amp	8 mm			3.3
MT29F4G08ABBFAH4-IT:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	536870912 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE	BGA63,10X12,32			10	.8 mm	85 Cel		512MX8	512M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm	100000 Write/Erase Cycles		9 mm					4294967296 bit	1.7 V		4K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm				NO
MT29F8G08ABABAWP:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	10	.5 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified				8589934592 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18.4 mm				NO
MT29F8G08ABACAH4:C	Micron Technology	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		1GX8	1G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm	Not Qualified				8589934592 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	11 mm				NO
MT35XU01GBBA1G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm					1073741824 bit	1.7 V			e1	30	260			8 mm			1.8
MT35XU02GCBA1G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC128GAZAQJP-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			137438953472 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153	1.95 V	1 mm		200 MHz	11.5 mm					1099511627776 bit	1.7 V						NAND TYPE		13 mm			1.8
MTFC16GAKAEEF-AIT	Micron Technology	FLASH CARD																																	GOLD OVER NICKEL																		e4	30	260						2.7
MTFC16GLWDQ-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm		52 MHz	14 mm					137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC4GLGDQ-AITATR	Micron Technology	FLASH		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO		8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		4GX8	4G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.4 mm		52 MHz	14 mm					34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm				NO
MTFC4GMWDM-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm					34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
MTFC8GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		52 MHz	14 mm					68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
MTFDHBE7T6TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			8444249301319 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		7.68TX8	7.68T	0 Cel					UNSPECIFIED		R-XXMA-N										67553994410557 bit							TLC NAND TYPE
MTSD512AKC7MS-1WT	Micron Technology
N25Q032A13EF640F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	6 mm			2.7
N25Q064A11EF640F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		R-PDSO-N8	2 V	1 mm		108 MHz	5 mm					67108864 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		6 mm			1.8
N25Q064A13ESFD0F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			2.7
N25Q128A11EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	134217728 words	1.8		1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	2 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	1.7 V				30	260	NOR TYPE	.00001 Amp	8 mm			1.8
PC28F00AP30TF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	4,1023	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			TOP	1073741824 bit	1.7 V		16	e1			NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
PC28F512M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified				536870912 bit	2.7 V		16/32	e1	30	260	NOR TYPE	.000225 Amp	13 mm	YES	100 ns	3	YES
RC28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	1.7 V			e0			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
CT250P2SSD8	Micron Technology
JS28F128P30BF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL		R-PDSO-G56	2 V	1.2 mm			14 mm	Not Qualified			BOTTOM	134217728 bit	1.7 V		8	e3			NOR TYPE	.000055 Amp	18.4 mm	YES	75 ns	1.8	NO
JS28F128P33B85A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,64K	28 mA	8388608 words		NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			DUAL		R-PDSO-G56						Not Qualified			BOTTOM	134217728 bit			4				NOR TYPE	.000155 Amp		YES	85 ns		NO
JS28F128P33BF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified			BOTTOM	134217728 bit	2.3 V		8		30	260	NOR TYPE	.002 Amp	18.4 mm	YES	20 ns	3	NO
JS28F256P30B95A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			DUAL		R-PDSO-G56						Not Qualified			BOTTOM	268435456 bit			4				NOR TYPE	.000115 Amp		YES	95 ns		NO
JS28F256P30T95A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			DUAL		R-PDSO-G56						Not Qualified			TOP	268435456 bit			4				NOR TYPE	.000115 Amp		YES	95 ns		NO
JS28F640J3D75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	54 mA	4194304 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	TIN	YES	DUAL		R-PDSO-G56						Not Qualified				67108864 bit			4/8	e3	30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
JS28F640J3F75B	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
M25P16-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	4.9 mm			3
M25P16-VMN3TPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm			3
M25P40-VMB6TPB	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		2.5/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		Flash Memories	20	.5 mm	85 Cel		512KX8	512K	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	.6 mm	100000 Write/Erase Cycles	75 MHz	2 mm	Not Qualified		SPI		4194304 bit	2.7 V	SUBGROUP FLASH3V		e4	30	260	NOR TYPE	.00001 Amp	3 mm			2.7
M25P40-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	2.7		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		4194304 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm			2.7
M25P40-VMN3TPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	2.7		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		4194304 bit	2.3 V				30	260	NOR TYPE	.00005 Amp	4.9 mm			2.7
M25P80-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	8388608 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	6 mm			2.7
M29F200FB5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29F400FT5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29F800FT55M3E2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G44	5.5 V	3 mm			12.6 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W128GH70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified	.00007 ms			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W256GH7AN6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified	.00007 ms		BOTTOM/TOP	268435456 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	20 mm	YES	70 ns	3	YES
MT25QL512ABA8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			536870912 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		512MX1	512M	-40 Cel					DUAL		R-PDSO-G16	3.6 V	2.65 mm		133 MHz	7.5 mm					536870912 bit	2.7 V				30	260	NOR TYPE		10.3 mm			3
MT25TL512BBA8ESF-0AATTR	Micron Technology	FLASH																																																				NOT SPECIFIED	NOT SPECIFIED						3
MT28EW01GABA1LJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm					1073741824 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		95 ns	3
MT28EW512ABA1LPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B56	3.6 V	1 mm			7 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			9 mm		95 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.