Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFC16GLXAM-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	17179869184 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	16GX8	16G	-25 Cel					BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	1 mm		52 MHz	11.5 mm				137438953472 bit	1.65 V						NAND TYPE		13 mm			1.8
MTFC32GLXDM-WT	Micron Technology	Embedded MMC		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	34359738368 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-25 Cel					BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	1.2 mm		52 MHz	11.5 mm				274877906944 bit	1.65 V						NAND TYPE		13 mm			1.8
MTFC64GAZAQHD-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	1.95 V	.9 mm		200 MHz	11.5 mm				549755813888 bit	1.7 V			e1	30	260	NAND TYPE		13 mm			1.8
MTFDCAE004SAJ-1N1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED										MICROELECTRONIC ASSEMBLY															UNSPECIFIED		R-XXMA-X						Not Qualified								30	260						5
MTFDHBM1T0TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1099511627776 words				8							95 Cel		1TX8	1T	-40 Cel					BOTTOM		R-XBGA-B									8796093022208 bit							TLC NAND TYPE
N25Q256A11EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	268435456 words	1.8		1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	2 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			1.8
PC28F128P30BF65E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM		S-PBGA-B64						Not Qualified		BOTTOM	134217728 bit			8				NOR TYPE	.000055 Amp		YES	65 ns		NO
MT25QL256ABA1EW9-0AAT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-N8	3.6 V	.8 mm		133 MHz	6 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT28EW512ABA1HPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B56	3.6 V	1 mm			7 mm				536870912 bit	2.7 V								9 mm		95 ns	3
MT29F4G01AAADDHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	536870912 words			3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	10	.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B63			100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		4294967296 bit					30	260	SLC NAND TYPE	.00005 Amp
MTFC64GAJAECE-AAT	Micron Technology	FLASH CARD																																																										2.7
MTFC8GLXEA-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	8589934592 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel					BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	.8 mm		52 MHz	11.5 mm				68719476736 bit	1.65 V						NAND TYPE		13 mm			1.8
MT29F1G08ABBFAH4-ITE:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm				1073741824 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
MT28EW512ABA1LPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				536870912 bit	2.7 V			e1	30	260	NOR TYPE		13 mm		95 ns	3
MTFC128GAPALBH-AAT	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.1 mm			11.5 mm				1099511627776 bit	2.7 V						NAND TYPE		13 mm
MTFDHBK512TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			549755813888 words				8	MICROELECTRONIC ASSEMBLY						95 Cel		512GX8	512G	-40 Cel					SINGLE		R-XSMA-N									4398046511104 bit							TLC NAND TYPE
MT28F800B5WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT35XU512ABA1G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm				536870912 bit	1.7 V			e1	30	260			8 mm			1.8
MT29F4G16ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
MTFDHBL256TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			274877906944 words				8							105 Cel		256GX8	256G	-40 Cel					BOTTOM		R-XBGA-B									2199023255552 bit							TLC NAND TYPE
MT29F8G08ADBFAH4-AAT:F	Micron Technology	FLASH	INDUSTRIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY						105 Cel		1GX8	1G	-40 Cel					BOTTOM		X-PBGA-B									8589934592 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE					1.8
PC28F00AP30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	4,1023	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified		TOP	1073741824 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
JS28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	MATTE TIN		DUAL		R-PDSO-G56	2 V	1.025 mm			14 mm	Not Qualified		TOP	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e3			NOR TYPE	.00021 Amp	18.4 mm	YES	20 ns	1.8	NO
MT29F64G08CBABBWP-12IT:B	Micron Technology	FLASH																																	TIN																	e3	30	260	MLC NAND TYPE					3.3
MT29F8G08ADAFAWP-AAT:F	Micron Technology	FLASH																																																					SLC NAND TYPE					3.3
MTFDDAV480TDS-1AW1ZABYY	Micron Technology	FLASH MODULE		75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		480GX8	480G	0 Cel					SINGLE		R-XSMA-N75	3.46 V	3.28 mm			22 mm				4123168604160 bit	3.14 V						TLC NAND TYPE		80 mm			3.3
JS28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	Nickel/Palladium/Gold (Ni/Pd/Au)	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified			1073741824 bit	2.7 V		16/32	e4	30	260	NOR TYPE	.00024 Amp	18.4 mm	YES	110 ns	3	YES
M29F800FB55N3E2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MT29F1G08ABAFAWP-ITE:F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				1073741824 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
MT29F2G16ABAEAWP-AIT:ETR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX16	128M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			3.3
MT29F4G08ABAFAH4-IT:F	Micron Technology	FLASH																																																					SLC NAND TYPE					3.3
MT35XU01GBBA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm				1073741824 bit	1.7 V			e1	30	260			8 mm			1.8
MT35XU512ABA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm				536870912 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC128GAZAQJP-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			137438953472 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153	1.95 V	1 mm		200 MHz	11.5 mm				1099511627776 bit	1.7 V						NAND TYPE		13 mm			1.8
MTFC64GAKAEEY-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		64GX8	64G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm				549755813888 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm			2.7
MTFDHBK256TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			274877906944 words				8	MICROELECTRONIC ASSEMBLY						95 Cel		256GX8	256G	-40 Cel					SINGLE		R-XSMA-N									2199023255552 bit							TLC NAND TYPE
MTFDHBL512TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			549755813888 words				8							95 Cel		512GX8	512G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-XBGA-B									4398046511104 bit				e1	30	260	TLC NAND TYPE
JS28F128P30TF75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL		R-PDSO-G56	2 V	1.2 mm			14 mm	Not Qualified		TOP	134217728 bit	1.7 V		8	e3			NOR TYPE	.000055 Amp	18.4 mm	YES	75 ns	1.8	NO
MT28EW256ABA1LJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		16MX16	16M	-40 Cel					DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		70 ns	3
MT29F1G01ABBFDSF-IT:F	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	134217728 words	1.8			8	SMALL OUTLINE	SOP16,.4			10	1.27 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	1.95 V	2.65 mm	100000 Write/Erase Cycles	83 MHz	7.5 mm		SPI		1073741824 bit	1.7 V						SLC NAND TYPE	.00005 Amp	10.3 mm			1.8
MT29F2G08ABAEAH4-ITX:E	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	35 mA	268435456 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63						Not Qualified			2147483648 bit			2K				SLC NAND TYPE	.0001 Amp			25 ns		NO
MT29F4G08ABBDAHC-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		512MX8	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	1.95 V	1 mm			10.5 mm				4294967296 bit	1.7 V			e1	30	260	SLC NAND TYPE		13 mm			1.8
MT35XU256ABA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm				268435456 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC64GASAONS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.461 mm		52 MHz	11.5 mm				549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GACAEDQ-AAT	Micron Technology	FLASH CARD																																	GOLD OVER NICKEL																	e4	30	260						2.7
MTFDHBL064TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			68719476736 words				8							105 Cel		64GX8	64G	-40 Cel					BOTTOM		R-XBGA-B									549755813888 bit							TLC NAND TYPE
MTFDHBL128TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			137438953472 words				8							105 Cel		128GX8	128G	-40 Cel					BOTTOM		R-XBGA-B									1099511627776 bit							TLC NAND TYPE
N25Q00AA13GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1073741824 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.41		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1GX1	1G	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified	SPI		1073741824 bit	2.7 V				30	260	NOR TYPE	.0002 Amp	10.3 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.