Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT25QU128ABA8E54-0SITTR	Micron Technology	FLASH																																																					NOT SPECIFIED	NOT SPECIFIED						1.8
MT35XU512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC4GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm					34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
MTFC64GAZAQHD-IT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	95 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.9 mm			11.5 mm					549755813888 bit	2.7 V						NAND TYPE		13 mm
MT25QU256ABA8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MT29F128G08AKCABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified				137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F8G01ADBFD12-AAT:F	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2		10	1 mm	105 Cel	3-STATE	1GX8	1G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI		8589934592 bit	1.7 V	CONFIGURABLE AS 8G X 1					SLC NAND TYPE	.00005 Amp	8 mm			1.8
MTFC64GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm					549755813888 bit	2.7 V			e1	30	260			18 mm			2.7
M25P64-VMF6TPBA	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		20 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			2.7
MT29F16G08ABCCBH1-AAT:C	Micron Technology	FLASH		100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			10	1 mm	105 Cel	3-STATE	2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100		3.6 V	1 mm	80000 Write/Erase Cycles		12 mm					17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18 mm		20 ns	3.3	NO
MT29F1G01ABBFDWB-IT:FTR	Micron Technology	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	134217728 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			10	1.27 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		1.95 V	.65 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI		1073741824 bit	1.7 V						SLC NAND TYPE	.00005 Amp	8 mm			1.8
MTFC2GMXEA-WT	Micron Technology	Embedded MMC		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		70 mA	2147483648 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	2GX8	2G	-25 Cel					BOTTOM	HARDWARE	R-PBGA-B153		1.95 V	.8 mm		52 MHz	11.5 mm					17179869184 bit	1.65 V						NAND TYPE		13 mm			1.8
MTFC4GLGDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm					34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
PC28F512P33BFD	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1					10 mm		95 ns	3
MT25QL02GCBB8E12-0AATTR	Micron Technology	FLASH																																	TIN SILVER COPPER																			e1	30	260						3
MT25QL128ABA8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		16MX8	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V			e1	30	260	NOR TYPE	.00005 Amp	8 mm			3
MT29F1G08ABBEAH4-ITX:E	Micron Technology	FLASH		63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	YES		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32				.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm	100000 Write/Erase Cycles		9 mm					1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm			1.8	YES
MTFDHBK1T0TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			1099511627776 words				8	MICROELECTRONIC ASSEMBLY						95 Cel		1TX8	1T	-40 Cel					SINGLE		R-XSMA-N											8796093022208 bit							TLC NAND TYPE
N25Q512A13GF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel		512MX1	512M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm			SPI		536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0005 Amp	8 mm			3
MT25QU256ABA8E12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00018 Amp	8 mm			1.8
MT28EW512ABA1HPC-0AATTR	Micron Technology	FLASH																																																					NOT SPECIFIED	NOT SPECIFIED						3
MTFC8GLDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-25 Cel		NO	TIN SILVER COPPER NICKEL		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm					68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO
M25P32-VMF6PBA	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	4194304 words			3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	1	3.6 V	2.65 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified		SPI		33554432 bit	2.7 V			e3			NOR TYPE	.00001 Amp	10.3 mm			2.7
MT28EW128ABA1HPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm					134217728 bit	2.7 V			e1	30	260			13 mm		70 ns	3
MT29F16G08ABACAWP:C	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48							Not Qualified				17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F32G08ABCABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified				34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MTFC64GAPALBH-AATTR	Micron Technology	FLASH CARD																																	TIN SILVER COPPER																				30	260						2.7
MTFDHBL128TDP-1AT12AIYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			137438953472 words				8							95 Cel		128GX8	128G	-40 Cel					BOTTOM		R-XBGA-B											1099511627776 bit							TLC NAND TYPE
N25Q256A11ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	268435456 words	1.8		1.8	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.5 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE			30	260	NOR TYPE	.00002 Amp	10.3 mm			1.8
M25P10-AVMN6TPYA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL		R-PDSO-G8		3.6 V	1.75 mm		50 MHz	3.9 mm					1048576 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		4.9 mm			2.7
M25P80-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm			2.7
M25P80-VMW6TGBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words			3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified		SPI		8388608 bit	2.7 V	LG-MAX			30	260	NOR TYPE	.00001 Amp	6.05 mm			2.7
MT25QU128ABA8ESF-0SITTR	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	10.3 mm			1.8
MT25QU256ABA8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V				30	260			8 mm			1.8
MT28EW128ABA1LJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm					134217728 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		70 ns	3
MT29F4G01ABBFD12-AAT:F	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	536870912 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2		10	1 mm	105 Cel	3-STATE	512MX8	512M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI		4294967296 bit	1.7 V	CONFIGURABLE AS 4G X 1					SLC NAND TYPE	.00005 Amp	8 mm			1.8
MT29F4G08ABADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				34359738368 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT35XU02GCBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC4GLMDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm					34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm
N25Q128A11ESE40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	1.8		1.8	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel			Matte Tin (Sn)		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		134217728 bit	1.7 V			e3	30	260	NOR TYPE	.00001 Amp	5.285 mm			3
N25Q256A13EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE			30	260	NOR TYPE	.0001 Amp	8 mm			3
PF48F4400P0VBQEE	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM		R-PBGA-B88							Not Qualified			BOTTOM/TOP	536870912 bit							NOR TYPE	.00042 Amp		YES	100 ns		NO
PF48F4400P0VBQEF	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B88							Not Qualified			BOTTOM/TOP	536870912 bit				e1			NOR TYPE	.00042 Amp		YES	100 ns	1.8	NO
PF48F4400P0VBQEK	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B88							Not Qualified			BOTTOM/TOP	536870912 bit				e1			NOR TYPE	.00042 Amp		YES	100 ns	1.8	NO
M25P16-VMC6G	Micron Technology	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,32		Flash Memories	20	.8 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	75 MHz	3 mm	Not Qualified		SPI		16777216 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	4 mm			3
M29F200FT5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MT25QL256ABA8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT25QU128ABB1ESE-0AUT	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm		166 MHz	5.285 mm			SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	5.285 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.