Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFC32GAPALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm					274877906944 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC64GAPALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel		64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm					549755813888 bit	2.7 V				30	260			13 mm			2.7
M25P16-VMC6TG	Micron Technology	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,32		Flash Memories	20	.8 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	.6 mm	100000 Write/Erase Cycles	75 MHz	3 mm	Not Qualified		SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4 mm			2.7
MT25QU01GBBB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			128057344 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	105 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm					1024458752 bit	1.7 V				30	260			8 mm			1.8
PC28F128J3F75B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				134217728 bit	2.7 V		4/8	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
M29W256GL70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified	.00007 ms			268435456 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	20 mm	YES	70 ns	3	YES
MT25QU01GBBB8E12-0AATTR	Micron Technology	FLASH																																																				30	260						1.8
N25Q128A13B1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI	BOTTOM	134217728 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3
MT25QL02GCBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		85 mA	268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	BOTTOM/TOP	2147483648 bit	2.7 V						NOR TYPE	.0005 Amp	8 mm			3
MT29F1G01ABBFDWB-IT:F	Micron Technology	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	134217728 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			10	1.27 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1.95 V	.65 mm	100000 Write/Erase Cycles	83 MHz	6 mm			SPI		1073741824 bit	1.7 V						SLC NAND TYPE	.00005 Amp	8 mm			1.8
MTFC32GAZAQDW-AATTR	Micron Technology	FLASH CARD		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.5 mm		200 MHz	14 mm					274877906944 bit	2.7 V						NAND TYPE		18 mm			3.3
M25P20-VMN6TPB	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	262144 words	2.7		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.3 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST			30	260	NOR TYPE	.000005 Amp	4.9 mm			2.7
MT25QU01GBBB8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			128057344 words	1.8			8	SMALL OUTLINE		1			1.27 mm	105 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G16	2 V	2.65 mm		166 MHz	7.5 mm					1024458752 bit	1.7 V				30	260			10.3 mm			1.8
MT25QL512ABB8E12-0AUTTR	Micron Technology	FLASH																																																				NOT SPECIFIED	NOT SPECIFIED						3
MT25QU01GBBB8E12-0AUTTR	Micron Technology	FLASH																																	TIN SILVER COPPER																		e1	30	260						1.8
MT25QU128ABB8ESF-0AUT	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP16,.4	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	2 V	2.65 mm		166 MHz	7.5 mm			SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	10.3 mm			1.8
N25Q256A83ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G16	3.6 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	2.7 V				30	260	NOR TYPE		10.3 mm			3
PC28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
MT25QL128ABA8ESF-0AATTR	Micron Technology	FLASH																																																				NOT SPECIFIED	NOT SPECIFIED						3
MT25QL512ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT29F16G08ABACAWP-IT:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		30 ns	2.7	NO
MT29F2G08ABAGAH4-IT:G	Micron Technology	FLASH																																																				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE					3.3
MT29F2G08ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm	Not Qualified				2147483648 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
PC28F256M29EWHD	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified				268435456 bit	2.7 V		16/32	e1			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	3	YES
TE28F128J3D75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56						Not Qualified				134217728 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
MTFC32GAZAQHD-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B153	1.95 V	.9 mm		200 MHz	11.5 mm					274877906944 bit	1.7 V						NAND TYPE		13 mm			1.8
N25Q032A13ESE40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		33554432 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	5.285 mm			2.7
N25Q512A13GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		512MX1	512M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm			SPI		536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0005 Amp	10.3 mm			3
M25P16-VMF6PBA	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.3 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified		SPI		16777216 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	10.3 mm			2.7
MT29F16G08ADBCAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		256K	20 mA	2147483648 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		2GX8	2G	0 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63						Not Qualified				17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			30 ns	1.8	NO
MTFC16GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm			14 mm					137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MT25QU256ABA8ESF-0SITTR	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		32MX8	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		268435456 bit	1.7 V				30	260	NOR TYPE	.000075 Amp	10.3 mm			1.8
MT29F128G08AJAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified				137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F2G01ABAGD12-AAT:G	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			10	1 mm	105 Cel		256MX8	256M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		2147483648 bit	2.7 V						SLC NAND TYPE	.00005 Amp	8 mm			3.3
MT29F4G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm			10.5 mm	Not Qualified				4294967296 bit	1.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MTSD032AHC6MS-1WTCS	Micron Technology	FLASH CARD		8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			34359738368 words	3.3			8	UNCASED CHIP						85 Cel		32GX8	32G	-25 Cel					UPPER		R-XUUC-N8	3.6 V	1.1 mm		208 MHz	11 mm			SPI		274877906944 bit	2.7 V						TLC NAND TYPE		15 mm			3.3
N25Q128A13ESF40F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3
M29W160ET70N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT25QL01GBBB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		1GX1	1G	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		133 MHz	6 mm					1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT28EW512ABA1HJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V				30	260	NOR TYPE		18.4 mm		95 ns	3
MT29F128G08CFAAAWPITZ:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		16GX8	16G	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F16G08ABACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F32G08ABCABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		4GX8	4G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100						Not Qualified				34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MTFC4GACAANA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		52 MHz	14 mm					34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			3.3
N25Q064A13ESFA0F	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
JS28F320J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	32	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified				33554432 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
MT25QL128ABB1ESE-0AUT	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.285 mm			SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	5.285 mm			3
MT25QU01GBBB1EW9-0SITTR	Micron Technology	FLASH																																																				NOT SPECIFIED	NOT SPECIFIED						1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.