Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PC28F256P33TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	2.3 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
MT25QU256ABA8E12-1SIT/TR	Micron Technology	FLASH																																																					NOT SPECIFIED	NOT SPECIFIED						1.8
MTFC2GMDEA-0MWTATR	Micron Technology	FLASH																																	TIN SILVER COPPER NICKEL																				30	260						3.3
MT25QU512ABB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			64094208 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					512753664 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MTFC32GAKAENA-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm					274877906944 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC32GAZAQHD-WT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	.9 mm			11.5 mm					274877906944 bit	2.7 V						NAND TYPE		13 mm
MT25QU01GBBB1EW9-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		1GX1	1G	-40 Cel					DUAL		R-PDSO-N8		2 V	.8 mm		166 MHz	6 mm					1073741824 bit	1.7 V								8 mm			1.8
MT29F1G08ABADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	1K	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				1073741824 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F2G08ABAGAWP-IT:G	Micron Technology	FLASH	INDUSTRIAL				PLASTIC/EPOXY		1	CMOS				ASYNCHRONOUS			268435456 words				8							85 Cel		256MX8	256M	-40 Cel			MATTE TIN															2147483648 bit				e3	30	260	SLC NAND TYPE
MTFC2GMDEA-0MWTA	Micron Technology	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		2GX8	2G	-25 Cel			TIN SILVER COPPER NICKEL		BOTTOM		R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm					17179869184 bit	2.7 V	ALSO HAVING MMC CONTROLLER		e2	30	260			13 mm			3.3
MT25QU128ABA1EW9-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		R-PDSO-N8		2 V	.8 mm		166 MHz	6 mm					134217728 bit	1.7 V				30	260	NOR TYPE		8 mm			1.8
N25Q032A13ESC40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.24		Flash Memories	20	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified		SPI		33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm			3
N25Q064A11ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		S-PDSO-G8		2 V	2.16 mm		108 MHz	5.285 mm					67108864 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			5.285 mm			1.8
MT25QU256ABA8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm					268435456 bit	1.7 V				30	260			10.3 mm			1.8
MTFC32GAZAQHD-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B153		1.95 V	.9 mm		200 MHz	11.5 mm					274877906944 bit	1.7 V				30	260	NAND TYPE		13 mm			1.8
JS28F128J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
JS28F640J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
M25P80-VMN6TPBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm			2.7
MT29F4G08ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified				4294967296 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
MTFC16GAPALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words		NO		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel		16GX8	16G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B153		3.6 V	1.2 mm		200 MHz	11.5 mm					137438953472 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7	NO
N25Q032A13ESC40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	108 MHz	3.9 mm	Not Qualified		SPI		33554432 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	4.9 mm			3
MT29F8G08ABACAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified				8589934592 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	11 mm				NO
MTFC32GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40				1 mm	85 Cel		32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100		3.6 V	1.2 mm		200 MHz	14 mm					274877906944 bit	2.7 V			e1	30	260	NAND TYPE		18 mm			2.7	NO
MT25QL256ABA8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.3 mm		133 MHz	7.5 mm					268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
MT25QL128ABA8E12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	16777216 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V						NOR TYPE	.00005 Amp	8 mm			3
MT25QU02GCBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		94 mA	268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1			1 mm	125 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		2147483648 bit	1.7 V			e1	30	260	NOR TYPE	.00013 Amp	8 mm			1.8
MTFC8GAMALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm					68719476736 bit	2.7 V			e1	30	260			18 mm			2.7
N25Q032A11EF640E	Micron Technology	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			1048576 words	1.8			32	SMALL OUTLINE, VERY THIN PROFILE					1.27 mm	85 Cel		1MX32	1M	-40 Cel					DUAL		R-PDSO-N8		2 V	1 mm		108 MHz	5 mm					33554432 bit	1.7 V				30	260			6 mm			1.8
MT25QU02GCBB8E12-0AATTR	Micron Technology	FLASH																																																					30	260						1.8
MT29F16G08ABABAWP-AIT:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			10	.5 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm					17179869184 bit	2.7 V		4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm			3.3	NO
MT25QL02GCBB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		85 mA	268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	BOTTOM/TOP	2147483648 bit	2.7 V			e1	30	260	NOR TYPE	.00028 Amp	8 mm			3
N25Q128A13EF840F	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	8 mm			3
MT25QL256ABA8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
M25P80-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	8388608 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST			30	260	NOR TYPE	.0001 Amp	6 mm			2.7
MT29F2G08ABAEAWP:E	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		256MX8	256M	0 Cel	2K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				2147483648 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MTFC32GAPALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	32GX8	32G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm					274877906944 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MTFC8GAMALBH-AITTR	Micron Technology	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			8589934592 words		NO		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20	4		5	.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B153		3.6 V	1.2 mm		200 MHz	11.5 mm					68719476736 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7	NO
MT25QU128ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MT29F4G08ABADAWP-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		512MX8	512M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					4294967296 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			3.3
MTFC8GAKAJCN-1MWTTR	Micron Technology	FLASH CARD	COMMERCIAL EXTENDED	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm					68719476736 bit	2.7 V				30	260	MLC NAND TYPE		13 mm
MT29F2G08ABAEAH4-IT:ETR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm					2147483648 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
MT25QU512ABB8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	SMALL OUTLINE					1.27 mm	105 Cel		512MX1	512M	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm					536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10.3 mm			1.8
MT29F8G08ABBCAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		256K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified				8589934592 bit			4K				SLC NAND TYPE	.00005 Amp			30 ns	1.8	NO
MTFC32GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40				1 mm	105 Cel		32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100		3.6 V	1.2 mm		200 MHz	14 mm					274877906944 bit	2.7 V			e1	30	260	NAND TYPE		18 mm			2.7	NO
MTFC32GJDDQ-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL										GRID ARRAY, LOW PROFILE					1 mm								TIN SILVER COPPER		BOTTOM		R-PBGA-B100			1.4 mm			14 mm									e1			MLC NAND TYPE		18 mm			3.3
M25P80-VMN3TPB	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	4.9 mm			2.7
MT25QL512ABB8E12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V			e1			NOR TYPE		8 mm			3
MTFC8GAMALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm					68719476736 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.